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Journal Abstract Search
305 related items for PubMed ID: 24785294
1. Switchable S = 1/2 and J = 1/2 Rashba bands in ferroelectric halide perovskites. Kim M, Im J, Freeman AJ, Ihm J, Jin H. Proc Natl Acad Sci U S A; 2014 May 13; 111(19):6900-4. PubMed ID: 24785294 [Abstract] [Full Text] [Related]
2. Rashba-like spin splitting along three momentum directions in trigonal layered PtBi2. Feng Y, Jiang Q, Feng B, Yang M, Xu T, Liu W, Yang X, Arita M, Schwier EF, Shimada K, Jeschke HO, Thomale R, Shi Y, Wu X, Xiao S, Qiao S, He S. Nat Commun; 2019 Oct 18; 10(1):4765. PubMed ID: 31628366 [Abstract] [Full Text] [Related]
3. Ferroelectric Rashba semiconductors, AgBiP2X6 (X = S, Se and Te), with valley polarization: an avenue towards electric and nonvolatile control of spintronic devices. Zhou B. Nanoscale; 2020 Mar 05; 12(9):5533-5542. PubMed ID: 32091050 [Abstract] [Full Text] [Related]
4. Strain-Induced Ferroelectric Topological Insulator. Liu S, Kim Y, Tan LZ, Rappe AM. Nano Lett; 2016 Mar 09; 16(3):1663-8. PubMed ID: 26814668 [Abstract] [Full Text] [Related]
5. Rashba and Dresselhaus Effects in Hybrid Organic-Inorganic Perovskites: From Basics to Devices. Kepenekian M, Robles R, Katan C, Sapori D, Pedesseau L, Even J. ACS Nano; 2015 Dec 22; 9(12):11557-67. PubMed ID: 26348023 [Abstract] [Full Text] [Related]
13. Nonvolatile Electric Control of Rashba Spin Splitting in Sb/In2Se3 Heterostructure. Cheng H, Sun X, Zhou J, Wang S, Su H, Ji W. ACS Appl Mater Interfaces; 2024 Sep 04; 16(35):46570-46577. PubMed ID: 39167777 [Abstract] [Full Text] [Related]
15. Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures. Xiao D, Zhu W, Ran Y, Nagaosa N, Okamoto S. Nat Commun; 2011 Dec 20; 2():596. PubMed ID: 22186892 [Abstract] [Full Text] [Related]