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PUBMED FOR HANDHELDS

Journal Abstract Search


130 related items for PubMed ID: 24863297

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  • 4. Dirac gap opening and Dirac-fermion-mediated magnetic coupling in antiferromagnetic Gd-doped topological insulators and their manipulation by synchrotron radiation.
    Shikin AM, Estyunin DA, Surnin YI, Koroleva AV, Shevchenko EV, Kokh KA, Tereshchenko OE, Kumar S, Schwier EF, Shimada K, Yoshikawa T, Saitoh Y, Takeda Y, Kimura A.
    Sci Rep; 2019 Mar 18; 9(1):4813. PubMed ID: 30886190
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  • 5. Odd-frequency superconductivity induced in topological insulators with and without hexagonal warping.
    Vasenko AS, Golubov AA, Silkin VM, Chulkov EV.
    J Phys Condens Matter; 2017 Jul 26; 29(29):295502. PubMed ID: 28557795
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  • 7. Topological character and magnetism of the Dirac state in Mn-doped Bi2Te3.
    Henk J, Flieger M, Maznichenko IV, Mertig I, Ernst A, Eremeev SV, Chulkov EV.
    Phys Rev Lett; 2012 Aug 17; 109(7):076801. PubMed ID: 23006392
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  • 8. Proximity Band Structure and Spin Textures on Both Sides of Topological-Insulator/Ferromagnetic-Metal Interface and Their Charge Transport Probes.
    Marmolejo-Tejada JM, Dolui K, Lazić P, Chang PH, Smidstrup S, Stradi D, Stokbro K, Nikolić BK.
    Nano Lett; 2017 Sep 13; 17(9):5626-5633. PubMed ID: 28795576
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  • 10. Selective trapping of hexagonally warped topological surface states in a triangular quantum corral.
    Chen M, Jiang YP, Peng J, Zhang H, Chang CZ, Feng X, Fu Z, Zheng F, Zhang P, Wang L, He K, Ma XC, Xue QK.
    Sci Adv; 2019 May 13; 5(5):eaaw3988. PubMed ID: 31114808
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  • 11. Accurate Ab Initio Quantum Mechanics Simulations of Bi2Se3 and Bi2Te3 Topological Insulator Surfaces.
    Crowley JM, Tahir-Kheli J, Goddard WA.
    J Phys Chem Lett; 2015 Oct 01; 6(19):3792-6. PubMed ID: 26722872
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  • 12. Importance of van der Waals interactions forab initiostudies of topological insulators.
    Shirali K, Shelton WA, Vekhter I.
    J Phys Condens Matter; 2020 Oct 19; 33(3):. PubMed ID: 33007759
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  • 15. Aberrant photoelectric effect in the topological insulator/n-GaN heterojunction (Bi2Te3/n-GaN) under unpolarized illumination.
    Ahmad F, Kandpal K, Singh R, Kumar R, Kumar P.
    Nanoscale; 2024 Jan 03; 16(2):604-613. PubMed ID: 38050855
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  • 17. Gate tunable relativistic mass and Berry's phase in topological insulator nanoribbon field effect devices.
    Jauregui LA, Pettes MT, Rokhinson LP, Shi L, Chen YP.
    Sci Rep; 2015 Feb 13; 5():8452. PubMed ID: 25677703
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  • 19. Dirac fermions at high-index surfaces of bismuth chalcogenide topological insulator nanostructures.
    Virk N, Yazyev OV.
    Sci Rep; 2016 Feb 05; 6():20220. PubMed ID: 26847409
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