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Journal Abstract Search

176 related items for PubMed ID: 25258192

  • 1.
    ; . PubMed ID:
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  • 2. Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy.
    Lancaster S, Groiss H, Zederbauer T, Andrews AM, MacFarland D, Schrenk W, Strasser G, Detz H.
    Nanotechnology; 2019 Feb 08; 30(6):065602. PubMed ID: 30523852
    [Abstract] [Full Text] [Related]

  • 3. Mechanism of self-assembled growth of ordered GaAs nanowire arrays by metalorganic vapor phase epitaxy on GaAs vicinal substrates.
    Mohan P, Bag R, Singh S, Kumar A, Tyagi R.
    Nanotechnology; 2012 Jan 20; 23(2):025601. PubMed ID: 22166369
    [Abstract] [Full Text] [Related]

  • 4.
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  • 5. Detailed modeling of the epitaxial growth of GaAs nanowires.
    De Jong E, LaPierre RR, Wen JZ.
    Nanotechnology; 2010 Jan 29; 21(4):045602. PubMed ID: 20009168
    [Abstract] [Full Text] [Related]

  • 6. Growth map for Ga-assisted growth of GaAs nanowires on Si(111) substrates by molecular beam epitaxy.
    Bastiman F, Küpers H, Somaschini C, Geelhaar L.
    Nanotechnology; 2016 Mar 04; 27(9):095601. PubMed ID: 26822408
    [Abstract] [Full Text] [Related]

  • 7. Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy.
    Bauer B, Rudolph A, Soda M, Fontcuberta i Morral A, Zweck J, Schuh D, Reiger E.
    Nanotechnology; 2010 Oct 29; 21(43):435601. PubMed ID: 20876983
    [Abstract] [Full Text] [Related]

  • 8. Impact of the Shadowing Effect on the Crystal Structure of Patterned Self-Catalyzed GaAs Nanowires.
    Schroth P, Al Humaidi M, Feigl L, Jakob J, Al Hassan A, Davtyan A, Küpers H, Tahraoui A, Geelhaar L, Pietsch U, Baumbach T.
    Nano Lett; 2019 Jul 10; 19(7):4263-4271. PubMed ID: 31150261
    [Abstract] [Full Text] [Related]

  • 9. Self-catalyzed VLS grown InAs nanowires with twinning superlattices.
    Grap T, Rieger T, Blömers Ch, Schäpers T, Grützmacher D, Lepsa MI.
    Nanotechnology; 2013 Aug 23; 24(33):335601. PubMed ID: 23881182
    [Abstract] [Full Text] [Related]

  • 10. High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga.
    Russo-Averchi E, Vukajlovic Plestina J, Tütüncüoglu G, Matteini F, Dalmau-Mallorquí A, de la Mata M, Rüffer D, Potts HA, Arbiol J, Conesa-Boj S, Fontcuberta i Morral A.
    Nano Lett; 2015 May 13; 15(5):2869-74. PubMed ID: 25894762
    [Abstract] [Full Text] [Related]

  • 11. High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning.
    Plissard S, Larrieu G, Wallart X, Caroff P.
    Nanotechnology; 2011 Jul 08; 22(27):275602. PubMed ID: 21597162
    [Abstract] [Full Text] [Related]

  • 12. Improving the yield of GaAs nanowires on silicon by Ga pre-deposition.
    Wilson DP, Dubrovskii VG, LaPierre RR.
    Nanotechnology; 2021 Apr 06; 32(26):. PubMed ID: 33730697
    [Abstract] [Full Text] [Related]

  • 13. Gold-free growth of GaAs nanowires on silicon: arrays and polytypism.
    Plissard S, Dick KA, Larrieu G, Godey S, Addad A, Wallart X, Caroff P.
    Nanotechnology; 2010 Sep 24; 21(38):385602. PubMed ID: 20798467
    [Abstract] [Full Text] [Related]

  • 14. Growth optimization and characterization of regular arrays of GaAs/AlGaAs core/shell nanowires for tandem solar cells on silicon.
    Vettori M, Piazza V, Cattoni A, Scaccabarozzi A, Patriarche G, Regreny P, Chauvin N, Botella C, Grenet G, Penuelas J, Fave A, Tchernycheva M, Gendry M.
    Nanotechnology; 2019 Feb 22; 30(8):084005. PubMed ID: 30524074
    [Abstract] [Full Text] [Related]

  • 15. Bi incorporation and segregation in the MBE-grown GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires.
    Sadowski J, Kaleta A, Kryvyi S, Janaszko D, Kurowska B, Bilska M, Wojciechowski T, Domagala JZ, Sanchez AM, Kret S.
    Sci Rep; 2022 Apr 09; 12(1):6007. PubMed ID: 35397635
    [Abstract] [Full Text] [Related]

  • 16. Ga crystallization dynamics during annealing of self-assisted GaAs nanowires.
    Scarpellini D, Fedorov A, Somaschini C, Frigeri C, Bollani M, Bietti S, Nöetzel R, Sanguinetti S.
    Nanotechnology; 2017 Jan 27; 28(4):045605. PubMed ID: 27997367
    [Abstract] [Full Text] [Related]

  • 17. Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon.
    Matteini F, Dubrovskii VG, Rüffer D, Tütüncüoğlu G, Fontana Y, Morral AF.
    Nanotechnology; 2015 Mar 13; 26(10):105603. PubMed ID: 25687793
    [Abstract] [Full Text] [Related]

  • 18. Stable and high yield growth of GaP and In0.2Ga0.8As nanowire arrays using In as a catalyst.
    Scaccabarozzi A, Cattoni A, Patriarche G, Travers L, Collin S, Harmand JC, Glas F, Oehler F.
    Nanoscale; 2020 Sep 17; 12(35):18240-18248. PubMed ID: 32856654
    [Abstract] [Full Text] [Related]

  • 19. Three-fold Symmetric Doping Mechanism in GaAs Nanowires.
    Dastjerdi MHT, Fiordaliso EM, Leshchenko ED, Akhtari-Zavareh A, Kasama T, Aagesen M, Dubrovskii VG, LaPierre RR.
    Nano Lett; 2017 Oct 11; 17(10):5875-5882. PubMed ID: 28903563
    [Abstract] [Full Text] [Related]

  • 20. Shape modification of III-V nanowires: the role of nucleation on sidewalls.
    Dubrovskii VG, Sibirev NV, Cirlin GE, Tchernycheva M, Harmand JC, Ustinov VM.
    Phys Rev E Stat Nonlin Soft Matter Phys; 2008 Mar 11; 77(3 Pt 1):031606. PubMed ID: 18517394
    [Abstract] [Full Text] [Related]

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