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Journal Abstract Search

143 related items for PubMed ID: 25288911

  • 1. Investigation of extended-gate field-effect transistor pH sensors based on different-temperature-annealed bi-layer MWCNTs-In2O3 films.
    Hung SC, Cheng NJ, Yang CF, Lo YP.
    Nanoscale Res Lett; 2014; 9(1):502. PubMed ID: 25288911
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  • 2. Effect of annealing temperature and capping ligands on the electron mobility and electronic structure of indium oxide nanocrystal thin films: a comparative study with oleic acid, benzoic acid, and 4-aminobenzoic acid.
    Le QT, Yun H, Park H, Jeong HD.
    Phys Chem Chem Phys; 2023 Nov 22; 25(45):30975-30992. PubMed ID: 37937718
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  • 3. Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application.
    Kim HY, Jung EA, Mun G, Agbenyeke RE, Park BK, Park JS, Son SU, Jeon DJ, Park SK, Chung TM, Han JH.
    ACS Appl Mater Interfaces; 2016 Oct 12; 8(40):26924-26931. PubMed ID: 27673338
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  • 4. Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor.
    Park JH, Yoo YB, Lee KH, Jang WS, Oh JY, Chae SS, Lee HW, Han SW, Baik HK.
    ACS Appl Mater Interfaces; 2013 Aug 28; 5(16):8067-75. PubMed ID: 23883390
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  • 5. Realization of tunable-performance in atomic layer deposited Hf-doped In2O3 thin film transistor via oxygen vacancy modulation.
    Zhu J, Hu S, Chen B, Wei S, Zhang Y, Wu X, Zou X, Lu X, Sun Q, Zhang DW, Ji L.
    J Chem Phys; 2024 Jan 28; 160(4):. PubMed ID: 38270240
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  • 6. Structural, Morphological, and Electron Transport Studies of Annealing Dependent In2O3 Dye-Sensitized Solar Cell.
    Mahalingam S, Abdullah H, Shaari S, Muchtar A, Asshari I.
    ScientificWorldJournal; 2015 Jan 28; 2015():403848. PubMed ID: 26146652
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  • 10. Bias Stress Stability of Solution-Processed Nano Indium Oxide Thin Film Transistor.
    Yao R, Fu X, Li W, Zhou S, Ning H, Tang B, Wei J, Cao X, Xu W, Peng J.
    Micromachines (Basel); 2021 Jan 22; 12(2):. PubMed ID: 33499221
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  • 11. Li-Assisted Low-Temperature Phase Transitions in Solution-Processed Indium Oxide Films for High-Performance Thin Film Transistor.
    Nguyen MC, Jang M, Lee DH, Bang HJ, Lee M, Jeong JK, Yang H, Choi R.
    Sci Rep; 2016 Apr 28; 6():25079. PubMed ID: 27121951
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  • 12. Growth Temperature Influence on Atomic-Layer-Deposited In2O3 Thin Films and Their Application in Inorganic Perovskite Solar Cells.
    Farva U, Lee HW, Kim RN, Lee DG, Kang DW, Kim J.
    Nanomaterials (Basel); 2021 Aug 11; 11(8):. PubMed ID: 34443878
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  • 14. Annealing effects on electrical properties of pure and tin-doped indium oxide thin films.
    Kato K, Omoto H, Yonekura M.
    J Nanosci Nanotechnol; 2012 Dec 11; 12(12):9183-6. PubMed ID: 23447975
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  • 19. Far-UV Annealed Inkjet-Printed In2O3 Semiconductor Layers for Thin-Film Transistors on a Flexible Polyethylene Naphthalate Substrate.
    Leppäniemi J, Eiroma K, Majumdar H, Alastalo A.
    ACS Appl Mater Interfaces; 2017 Mar 15; 9(10):8774-8782. PubMed ID: 28211995
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