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Journal Abstract Search

701 related items for PubMed ID: 25314022

  • 1. Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling.
    Du Y, Liu H, Deng Y, Ye PD.
    ACS Nano; 2014 Oct 28; 8(10):10035-42. PubMed ID: 25314022
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  • 2. Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers.
    Liu H, Si M, Deng Y, Neal AT, Du Y, Najmaei S, Ajayan PM, Lou J, Ye PD.
    ACS Nano; 2014 Jan 28; 8(1):1031-8. PubMed ID: 24351134
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  • 3. Ambipolar phosphorene field effect transistor.
    Das S, Demarteau M, Roelofs A.
    ACS Nano; 2014 Nov 25; 8(11):11730-8. PubMed ID: 25329532
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  • 4. Low Schottky barrier black phosphorus field-effect devices with ferromagnetic tunnel contacts.
    Kamalakar MV, Madhushankar BN, Dankert A, Dash SP.
    Small; 2015 May 13; 11(18):2209-16. PubMed ID: 25586013
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  • 7. Field effect transistors with current saturation and voltage gain in ultrathin ReS2.
    Corbet CM, McClellan C, Rai A, Sonde SS, Tutuc E, Banerjee SK.
    ACS Nano; 2015 Jan 27; 9(1):363-70. PubMed ID: 25514177
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  • 11. Fundamental Limits on the Subthreshold Slope in Schottky Source/Drain Black Phosphorus Field-Effect Transistors.
    Haratipour N, Namgung S, Oh SH, Koester SJ.
    ACS Nano; 2016 Mar 22; 10(3):3791-800. PubMed ID: 26914179
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  • 12. Schottky Barriers in Bilayer Phosphorene Transistors.
    Pan Y, Dan Y, Wang Y, Ye M, Zhang H, Quhe R, Zhang X, Li J, Guo W, Yang L, Lu J.
    ACS Appl Mater Interfaces; 2017 Apr 12; 9(14):12694-12705. PubMed ID: 28322554
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  • 13. Improving Performances of In-Plane Transition-Metal Dichalcogenide Schottky Barrier Field-Effect Transistors.
    Fan ZQ, Jiang XW, Chen J, Luo JW.
    ACS Appl Mater Interfaces; 2018 Jun 06; 10(22):19271-19277. PubMed ID: 29737827
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  • 14. Black Phosphorus Field-Effect Transistors with Work Function Tunable Contacts.
    Ma Y, Shen C, Zhang A, Chen L, Liu Y, Chen J, Liu Q, Li Z, Amer MR, Nilges T, Abbas AN, Zhou C.
    ACS Nano; 2017 Jul 25; 11(7):7126-7133. PubMed ID: 28653827
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  • 15. Enhancing ambipolar carrier transport of black phosphorus field-effect transistors with Ni-P alloy contacts.
    Park H, Kim J.
    Phys Chem Chem Phys; 2018 Sep 12; 20(35):22439-22444. PubMed ID: 30062335
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  • 16. Black Phosphorus Transistors with Near Band Edge Contact Schottky Barrier.
    Ling ZP, Sakar S, Mathew S, Zhu JT, Gopinadhan K, Venkatesan T, Ang KW.
    Sci Rep; 2015 Dec 15; 5():18000. PubMed ID: 26667402
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  • 18. Impact of Contact on the Operation and Performance of Back-Gated Monolayer MoS2 Field-Effect-Transistors.
    Liu W, Sarkar D, Kang J, Cao W, Banerjee K.
    ACS Nano; 2015 Aug 25; 9(8):7904-12. PubMed ID: 26039221
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  • 20. Unipolar n-Type Black Phosphorus Transistors with Low Work Function Contacts.
    Wang CH, Incorvia JAC, McClellan CJ, Yu AC, Mleczko MJ, Pop E, Wong HP.
    Nano Lett; 2018 May 09; 18(5):2822-2827. PubMed ID: 29620900
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