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Journal Abstract Search


329 related items for PubMed ID: 25354332

  • 1. Aqueous combustion synthesis of aluminum oxide thin films and application as gate dielectric in GZTO solution-based TFTs.
    Branquinho R, Salgueiro D, Santos L, Barquinha P, Pereira L, Martins R, Fortunato E.
    ACS Appl Mater Interfaces; 2014 Nov 26; 6(22):19592-9. PubMed ID: 25354332
    [Abstract] [Full Text] [Related]

  • 2. UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistors.
    Carlos E, Branquinho R, Kiazadeh A, Barquinha P, Martins R, Fortunato E.
    ACS Appl Mater Interfaces; 2016 Nov 16; 8(45):31100-31108. PubMed ID: 27762536
    [Abstract] [Full Text] [Related]

  • 3. A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance.
    Kim H, Kwack YJ, Yun EJ, Choi WS.
    Sci Rep; 2016 Sep 19; 6():33576. PubMed ID: 27641430
    [Abstract] [Full Text] [Related]

  • 4. All-amorphous-oxide transparent, flexible thin-film transistors. Efficacy of bilayer gate dielectrics.
    Liu J, Buchholz DB, Hennek JW, Chang RP, Facchetti A, Marks TJ.
    J Am Chem Soc; 2010 Sep 01; 132(34):11934-42. PubMed ID: 20698566
    [Abstract] [Full Text] [Related]

  • 5. Lanthanum aluminum oxide thin-film dielectrics from aqueous solution.
    Plassmeyer PN, Archila K, Wager JF, Page CJ.
    ACS Appl Mater Interfaces; 2015 Jan 28; 7(3):1678-84. PubMed ID: 25532438
    [Abstract] [Full Text] [Related]

  • 6. High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors.
    Jaehnike F, Pham DV, Anselmann R, Bock C, Kunze U.
    ACS Appl Mater Interfaces; 2015 Jul 01; 7(25):14011-7. PubMed ID: 26039187
    [Abstract] [Full Text] [Related]

  • 7. High-mobility solution-processed tin oxide thin-film transistors with high-κ alumina dielectric working in enhancement mode.
    Huang G, Duan L, Dong G, Zhang D, Qiu Y.
    ACS Appl Mater Interfaces; 2014 Dec 10; 6(23):20786-94. PubMed ID: 25375760
    [Abstract] [Full Text] [Related]

  • 8. Atmospheric-pressure plasma treatment toward high-quality solution-processed aluminum oxide gate dielectric films in thin-film transistors.
    Park J, Cho NK, Lee SE, Lee EG, Lee J, Im C, Na HJ, Kim YS.
    Nanotechnology; 2019 Dec 06; 30(49):495702. PubMed ID: 31476746
    [Abstract] [Full Text] [Related]

  • 9. Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.
    Liu A, Liu GX, Zhu HH, Xu F, Fortunato E, Martins R, Shan FK.
    ACS Appl Mater Interfaces; 2014 Oct 22; 6(20):17364-9. PubMed ID: 25285983
    [Abstract] [Full Text] [Related]

  • 10. Fully solution-induced high performance indium oxide thin film transistors with ZrO x high-k gate dielectrics.
    Zhu L, He G, Lv J, Fortunato E, Martins R.
    RSC Adv; 2018 May 03; 8(30):16788-16799. PubMed ID: 35540525
    [Abstract] [Full Text] [Related]

  • 11. Solution-deposited organic-inorganic hybrid multilayer gate dielectrics. Design, synthesis, microstructures, and electrical properties with thin-film transistors.
    Ha YG, Emery JD, Bedzyk MJ, Usta H, Facchetti A, Marks TJ.
    J Am Chem Soc; 2011 Jul 06; 133(26):10239-50. PubMed ID: 21609017
    [Abstract] [Full Text] [Related]

  • 12. Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility.
    Everaerts K, Zeng L, Hennek JW, Camacho DI, Jariwala D, Bedzyk MJ, Hersam MC, Marks TJ.
    ACS Appl Mater Interfaces; 2013 Nov 27; 5(22):11884-93. PubMed ID: 24187917
    [Abstract] [Full Text] [Related]

  • 13. Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric.
    Park JH, Yoo YB, Lee KH, Jang WS, Oh JY, Chae SS, Baik HK.
    ACS Appl Mater Interfaces; 2013 Jan 23; 5(2):410-7. PubMed ID: 23267443
    [Abstract] [Full Text] [Related]

  • 14. Modulating Cationic Ratios for High-Performance Transparent Solution-Processed Electronics.
    John RA, Nguyen AC, Chen Y, Shukla S, Chen S, Mathews N.
    ACS Appl Mater Interfaces; 2016 Jan 20; 8(2):1139-46. PubMed ID: 26695104
    [Abstract] [Full Text] [Related]

  • 15. Low-temperature solution-processed amorphous indium tin oxide field-effect transistors.
    Kim HS, Kim MG, Ha YG, Kanatzidis MG, Marks TJ, Facchetti A.
    J Am Chem Soc; 2009 Aug 12; 131(31):10826-7. PubMed ID: 19603806
    [Abstract] [Full Text] [Related]

  • 16. Enhanced Interfacial Integrity of Amorphous Oxide Thin-Film Transistors by Elemental Diffusion of Ternary Oxide Semiconductors.
    Jeon SP, Heo JS, Kim I, Kim YH, Park SK.
    ACS Appl Mater Interfaces; 2020 Dec 30; 12(52):57996-58004. PubMed ID: 33332113
    [Abstract] [Full Text] [Related]

  • 17. Facile and environmentally friendly solution-processed aluminum oxide dielectric for low-temperature, high-performance oxide thin-film transistors.
    Xu W, Wang H, Xie F, Chen J, Cao H, Xu JB.
    ACS Appl Mater Interfaces; 2015 Mar 18; 7(10):5803-10. PubMed ID: 25679286
    [Abstract] [Full Text] [Related]

  • 18. Proton Conducting Perhydropolysilazane-Derived Gate Dielectric for Solution-Processed Metal Oxide-Based Thin-Film Transistors.
    Kang YH, Min BK, Kim SK, Bae G, Song W, Lee C, Cho SY, An KS.
    ACS Appl Mater Interfaces; 2020 Apr 01; 12(13):15396-15405. PubMed ID: 32148019
    [Abstract] [Full Text] [Related]

  • 19. Performance Enhancement of ZITO Thin-Film Transistors via Graphene Bridge Layer by Sol-Gel Combustion Process.
    Zhang J, Dong P, Gao Y, Sheng C, Li X.
    ACS Appl Mater Interfaces; 2015 Nov 04; 7(43):24103-9. PubMed ID: 26473579
    [Abstract] [Full Text] [Related]

  • 20. Boosting Electrical Performance of High-κ Nanomultilayer Dielectrics and Electronic Devices by Combining Solution Combustion Synthesis and UV Irradiation.
    Carlos E, Branquinho R, Kiazadeh A, Martins J, Barquinha P, Martins R, Fortunato E.
    ACS Appl Mater Interfaces; 2017 Nov 22; 9(46):40428-40437. PubMed ID: 29090904
    [Abstract] [Full Text] [Related]


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