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Journal Abstract Search
126 related items for PubMed ID: 25367702
1. Controlled growth of few-layer hexagonal boron nitride on copper foils using ion beam sputtering deposition. Wang H, Zhang X, Meng J, Yin Z, Liu X, Zhao Y, Zhang L. Small; 2015 Apr; 11(13):1542-7. PubMed ID: 25367702 [Abstract] [Full Text] [Related]
2. Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition. Meng JH, Zhang XW, Wang HL, Ren XB, Jin CH, Yin ZG, Liu X, Liu H. Nanoscale; 2015 Oct 14; 7(38):16046-53. PubMed ID: 26371688 [Abstract] [Full Text] [Related]
7. Toward the controlled synthesis of hexagonal boron nitride films. Ismach A, Chou H, Ferrer DA, Wu Y, McDonnell S, Floresca HC, Covacevich A, Pope C, Piner R, Kim MJ, Wallace RM, Colombo L, Ruoff RS. ACS Nano; 2012 Jul 24; 6(7):6378-85. PubMed ID: 22702240 [Abstract] [Full Text] [Related]
8. Aligned Growth of Millimeter-Size Hexagonal Boron Nitride Single-Crystal Domains on Epitaxial Nickel Thin Film. Meng J, Zhang X, Wang Y, Yin Z, Liu H, Xia J, Wang H, You J, Jin P, Wang D, Meng XM. Small; 2017 May 24; 13(18):. PubMed ID: 28266795 [Abstract] [Full Text] [Related]
12. Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy. Lu G, Wu T, Yuan Q, Wang H, Wang H, Ding F, Xie X, Jiang M. Nat Commun; 2015 Jan 21; 6():6160. PubMed ID: 25606802 [Abstract] [Full Text] [Related]
13. Chemical Vapor Deposition Growth of Large Single-Crystal Mono-, Bi-, Tri-Layer Hexagonal Boron Nitride and Their Interlayer Stacking. Ji Y, Calderon B, Han Y, Cueva P, Jungwirth NR, Alsalman HA, Hwang J, Fuchs GD, Muller DA, Spencer MG. ACS Nano; 2017 Dec 26; 11(12):12057-12066. PubMed ID: 29099576 [Abstract] [Full Text] [Related]
14. Low-Temperature Direct Growth of Few-Layer Hexagonal Boron Nitride on Catalyst-Free Sapphire Substrates. Chen J, Wang G, Meng J, Cheng Y, Yin Z, Tian Y, Huang J, Zhang S, Wu J, Zhang X. ACS Appl Mater Interfaces; 2022 Feb 09; 14(5):7004-7011. PubMed ID: 35080841 [Abstract] [Full Text] [Related]