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Journal Abstract Search

189 related items for PubMed ID: 25369559

  • 1. Few-layer black phosphorus field-effect transistors with reduced current fluctuation.
    Na J, Lee YT, Lim JA, Hwang DK, Kim GT, Choi WK, Song YW.
    ACS Nano; 2014 Nov 25; 8(11):11753-62. PubMed ID: 25369559
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  • 4. Suppression of Interfacial Current Fluctuation in MoTe2 Transistors with Different Dielectrics.
    Ji H, Joo MK, Yun Y, Park JH, Lee G, Moon BH, Yi H, Suh D, Lim SC.
    ACS Appl Mater Interfaces; 2016 Jul 27; 8(29):19092-9. PubMed ID: 27362461
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  • 5. Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling.
    Du Y, Liu H, Deng Y, Ye PD.
    ACS Nano; 2014 Oct 28; 8(10):10035-42. PubMed ID: 25314022
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  • 8. Enhanced Performance of Field-Effect Transistors Based on Black Phosphorus Channels Reduced by Galvanic Corrosion of Al Overlayers.
    Lee S, Yoon C, Lee JH, Kim YS, Lee MJ, Kim W, Baik J, Jia Q, Park BH.
    ACS Appl Mater Interfaces; 2018 Jun 06; 10(22):18895-18901. PubMed ID: 29767500
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  • 10. Role of self-assembled monolayer passivation in electrical transport properties and flicker noise of nanowire transistors.
    Kim S, Carpenter PD, Jean RK, Chen H, Zhou C, Ju S, Janes DB.
    ACS Nano; 2012 Aug 28; 6(8):7352-61. PubMed ID: 22775468
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  • 11. Modulating the interface quality and electrical properties of HfTiO/InGaAs gate stack by atomic-layer-deposition-derived Al₂O₃ passivation layer.
    He G, Gao J, Chen H, Cui J, Sun Z, Chen X.
    ACS Appl Mater Interfaces; 2014 Dec 24; 6(24):22013-25. PubMed ID: 25471009
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  • 13. Enhanced stability of black phosphorus field-effect transistors with SiO₂ passivation.
    Wan B, Yang B, Wang Y, Zhang J, Zeng Z, Liu Z, Wang W.
    Nanotechnology; 2015 Oct 30; 26(43):435702. PubMed ID: 26436439
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  • 14. Air-stable few-layer black phosphorus phototransistor for near-infrared detection.
    Na J, Park K, Kim JT, Choi WK, Song YW.
    Nanotechnology; 2017 Feb 24; 28(8):085201. PubMed ID: 28028247
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  • 15. Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers.
    Ra HS, Lee AY, Kwak DH, Jeong MH, Lee JS.
    ACS Appl Mater Interfaces; 2018 Jan 10; 10(1):925-932. PubMed ID: 29256593
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  • 16. Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition.
    Wang WC, Tsai MC, Yang J, Hsu C, Chen MJ.
    ACS Appl Mater Interfaces; 2015 May 20; 7(19):10228-37. PubMed ID: 25919200
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  • 18. Interface Engineering for the Enhancement of Carrier Transport in Black Phosphorus Transistor with Ultra-Thin High-k Gate Dielectric.
    Ling ZP, Zhu JT, Liu X, Ang KW.
    Sci Rep; 2016 May 25; 6():26609. PubMed ID: 27222074
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  • 19. How Important Is the Metal-Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus?
    Yang L, Charnas A, Qiu G, Lin YM, Lu CC, Tsai W, Paduano Q, Snure M, Ye PD.
    ACS Omega; 2017 Aug 31; 2(8):4173-4179. PubMed ID: 31457714
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