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PUBMED FOR HANDHELDS

Journal Abstract Search


498 related items for PubMed ID: 25456792

  • 1. Microwave annealing effect for highly reliable biosensor: dual-gate ion-sensitive field-effect transistor using amorphous InGaZnO thin-film transistor.
    Lee IK, Lee KH, Lee S, Cho WJ.
    ACS Appl Mater Interfaces; 2014 Dec 24; 6(24):22680-6. PubMed ID: 25456792
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  • 4. Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.
    Liu A, Liu GX, Zhu HH, Xu F, Fortunato E, Martins R, Shan FK.
    ACS Appl Mater Interfaces; 2014 Oct 22; 6(20):17364-9. PubMed ID: 25285983
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  • 8. As-Grown Crystalline InGaZnO by Spray Pyrolysis on a Flexible Substrate for a Thin-Film Transistor with Excellent Stability.
    Bae J, Ali A, Islam MM, Jeong M, Park C, Jang J.
    ACS Appl Mater Interfaces; 2023 Aug 23; 15(33):39494-39504. PubMed ID: 37561400
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  • 10. Effect of the annealing ambient on the electrical characteristics of the amorphous InGaZnO thin film transistors.
    Huang YC, Yang PY, Huang HY, Wang SJ, Cheng HC.
    J Nanosci Nanotechnol; 2012 Jul 23; 12(7):5625-30. PubMed ID: 22966622
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  • 13. Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar-O2 Mixed Plasma Treatment and Rapid Thermal Annealing.
    Liu WS, Hsu CH, Jiang Y, Lai YC, Kuo HC.
    Membranes (Basel); 2021 Dec 30; 12(1):. PubMed ID: 35054574
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  • 16. Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness.
    Kim YK, Ahn CH, Yun MG, Cho SW, Kang WJ, Cho HK.
    Sci Rep; 2016 May 20; 6():26287. PubMed ID: 27198067
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  • 19. Investigation of Electrical Characteristics on LaAlO₃/ZrO₂/IGZO TFTs with Microwave Annealing.
    Wu CH, Chang KM, Chen YM, Zhang YX, Cheng CY.
    J Nanosci Nanotechnol; 2019 Apr 01; 19(4):2302-2305. PubMed ID: 30486987
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  • 20. Ultraviolet-Assisted Low-Thermal-Budget-Driven α-InGaZnO Thin Films for High-Performance Transistors and Logic Circuits.
    Zhang Y, He G, Wang L, Wang W, Xu X, Liu W.
    ACS Nano; 2022 Mar 22; 16(3):4961-4971. PubMed ID: 35274929
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