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Journal Abstract Search
498 related items for PubMed ID: 25456792
1. Microwave annealing effect for highly reliable biosensor: dual-gate ion-sensitive field-effect transistor using amorphous InGaZnO thin-film transistor. Lee IK, Lee KH, Lee S, Cho WJ. ACS Appl Mater Interfaces; 2014 Dec 24; 6(24):22680-6. PubMed ID: 25456792 [Abstract] [Full Text] [Related]
8. As-Grown Crystalline InGaZnO by Spray Pyrolysis on a Flexible Substrate for a Thin-Film Transistor with Excellent Stability. Bae J, Ali A, Islam MM, Jeong M, Park C, Jang J. ACS Appl Mater Interfaces; 2023 Aug 23; 15(33):39494-39504. PubMed ID: 37561400 [Abstract] [Full Text] [Related]
10. Effect of the annealing ambient on the electrical characteristics of the amorphous InGaZnO thin film transistors. Huang YC, Yang PY, Huang HY, Wang SJ, Cheng HC. J Nanosci Nanotechnol; 2012 Jul 23; 12(7):5625-30. PubMed ID: 22966622 [Abstract] [Full Text] [Related]
16. Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness. Kim YK, Ahn CH, Yun MG, Cho SW, Kang WJ, Cho HK. Sci Rep; 2016 May 20; 6():26287. PubMed ID: 27198067 [Abstract] [Full Text] [Related]
19. Investigation of Electrical Characteristics on LaAlO₃/ZrO₂/IGZO TFTs with Microwave Annealing. Wu CH, Chang KM, Chen YM, Zhang YX, Cheng CY. J Nanosci Nanotechnol; 2019 Apr 01; 19(4):2302-2305. PubMed ID: 30486987 [Abstract] [Full Text] [Related]
20. Ultraviolet-Assisted Low-Thermal-Budget-Driven α-InGaZnO Thin Films for High-Performance Transistors and Logic Circuits. Zhang Y, He G, Wang L, Wang W, Xu X, Liu W. ACS Nano; 2022 Mar 22; 16(3):4961-4971. PubMed ID: 35274929 [Abstract] [Full Text] [Related] Page: [Next] [New Search]