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Journal Abstract Search

631 related items for PubMed ID: 25494474

  • 1. Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition.
    Shih HY, Lin MC, Chen LY, Chen MJ.
    Nanotechnology; 2015 Jan 09; 26(1):014002. PubMed ID: 25494474
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  • 2. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.
    Shih HY, Chu FC, Das A, Lee CY, Chen MJ, Lin RM.
    Nanoscale Res Lett; 2016 Dec 09; 11(1):235. PubMed ID: 27129687
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  • 8. Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si (111) wafer.
    Luo XH, Wang RM, Zhang XP, Zhang HZ, Yu DP, Luo MC.
    Micron; 2004 Dec 09; 35(6):475-80. PubMed ID: 15120133
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  • 9. Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si₂Cl₆ and NH₃ Plasma.
    Ovanesyan RA, Hausmann DM, Agarwal S.
    ACS Appl Mater Interfaces; 2015 May 27; 7(20):10806-13. PubMed ID: 25927250
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  • 10. Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer.
    Fisichella G, Schilirò E, Di Franco S, Fiorenza P, Lo Nigro R, Roccaforte F, Ravesi S, Giannazzo F.
    ACS Appl Mater Interfaces; 2017 Mar 01; 9(8):7761-7771. PubMed ID: 28135063
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  • 12. Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition.
    Schilirò E, Giannazzo F, Di Franco S, Greco G, Fiorenza P, Roccaforte F, Prystawko P, Kruszewski P, Leszczynski M, Cora I, Pécz B, Fogarassy Z, Lo Nigro R.
    Nanomaterials (Basel); 2021 Dec 07; 11(12):. PubMed ID: 34947665
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  • 14. Wafer-scale growth of MoS2 thin films by atomic layer deposition.
    Pyeon JJ, Kim SH, Jeong DS, Baek SH, Kang CY, Kim JS, Kim SK.
    Nanoscale; 2016 May 19; 8(20):10792-8. PubMed ID: 27166838
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  • 16. PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity.
    Liu S, Peng M, Hou C, He Y, Li M, Zheng X.
    Nanoscale Res Lett; 2017 Dec 19; 12(1):279. PubMed ID: 28423865
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  • 18. Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures.
    Ren FB, Jiang SC, Hsu CH, Zhang XY, Gao P, Wu WY, Chiu YJ, Lien SY, Zhu WZ.
    Molecules; 2022 Nov 22; 27(23):. PubMed ID: 36500217
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  • 19. Atomic layer deposited molybdenum nitride thin film: a promising anode material for Li ion batteries.
    Nandi DK, Sen UK, Choudhury D, Mitra S, Sarkar SK.
    ACS Appl Mater Interfaces; 2014 May 14; 6(9):6606-15. PubMed ID: 24641277
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  • 20. Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS2 Layer.
    Susanto I, Tsai CY, Ho YT, Tsai PY, Yu IS.
    Nanomaterials (Basel); 2021 May 26; 11(6):. PubMed ID: 34073367
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