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Journal Abstract Search

281 related items for PubMed ID: 25537590

  • 1. Polytypism in GaAs nanowires: determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction.
    Köhl M, Schroth P, Minkevich AA, Hornung JW, Dimakis E, Somaschini C, Geelhaar L, Aschenbrenner T, Lazarev S, Grigoriev D, Pietsch U, Baumbach T.
    J Synchrotron Radiat; 2015 Jan; 22(1):67-75. PubMed ID: 25537590
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  • 2. Perspectives and limitations of symmetric X-ray Bragg reflections for inspecting polytypism in nanowires.
    Köhl M, Schroth P, Baumbach T.
    J Synchrotron Radiat; 2016 Mar; 23(2):487-500. PubMed ID: 26917137
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  • 3. Evolution of polytypism in GaAs nanowires during growth revealed by time-resolved in situ x-ray diffraction.
    Schroth P, Köhl M, Hornung JW, Dimakis E, Somaschini C, Geelhaar L, Biermanns A, Bauer S, Lazarev S, Pietsch U, Baumbach T.
    Phys Rev Lett; 2015 Feb 06; 114(5):055504. PubMed ID: 25699455
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  • 4. Polytypism in GaAs/GaNAs core-shell nanowires.
    Yukimune M, Fujiwara R, Mita T, Ishikawa F.
    Nanotechnology; 2020 Dec 11; 31(50):505608. PubMed ID: 32937605
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  • 8. Simultaneous Growth of Pure Wurtzite and Zinc Blende Nanowires.
    Lehmann S, Wallentin J, Mårtensson EK, Ek M, Deppert K, Dick KA, Borgström MT.
    Nano Lett; 2019 Apr 10; 19(4):2723-2730. PubMed ID: 30888174
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  • 13. Zinc blende GaAsSb nanowires grown by molecular beam epitaxy.
    Dheeraj DL, Patriarche G, Largeau L, Zhou HL, van Helvoort AT, Glas F, Harmand JC, Fimland BO, Weman H.
    Nanotechnology; 2008 Jul 09; 19(27):275605. PubMed ID: 21828712
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  • 14. An ab initio approach on the asymmetric stacking of GaAs 〈111〉 nanowires grown by a vapor-solid method.
    Yeu IW, Han G, Hwang CS, Choi JH.
    Nanoscale; 2020 Sep 14; 12(34):17703-17714. PubMed ID: 32608427
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  • 16. Growth of dilute nitride GaAsN/GaAs heterostructure nanowires on Si substrates.
    Araki Y, Yamaguchi M, Ishikawa F.
    Nanotechnology; 2013 Feb 15; 24(6):065601. PubMed ID: 23324475
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