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730 related items for PubMed ID: 25569178
1. Raman spectroscopy and in situ Raman spectroelectrochemistry of isotopically engineered graphene systems. Frank O, Dresselhaus MS, Kalbac M. Acc Chem Res; 2015 Jan 20; 48(1):111-8. PubMed ID: 25569178 [Abstract] [Full Text] [Related]
3. Polycrystallinity and stacking in CVD graphene. Tsen AW, Brown L, Havener RW, Park J. Acc Chem Res; 2013 Oct 15; 46(10):2286-96. PubMed ID: 23135386 [Abstract] [Full Text] [Related]
4. Comparative study of Raman spectroscopy in graphene and MoS2-type transition metal dichalcogenides. Pimenta MA, Del Corro E, Carvalho BR, Fantini C, Malard LM. Acc Chem Res; 2015 Jan 20; 48(1):41-7. PubMed ID: 25490518 [Abstract] [Full Text] [Related]
5. Twisting bilayer graphene superlattices. Lu CC, Lin YC, Liu Z, Yeh CH, Suenaga K, Chiu PW. ACS Nano; 2013 Mar 26; 7(3):2587-94. PubMed ID: 23448165 [Abstract] [Full Text] [Related]
6. Heating Isotopically Labeled Bernal Stacked Graphene: A Raman Spectroscopy Study. Ek-Weis J, Costa S, Frank O, Kalbac M. J Phys Chem Lett; 2014 Feb 06; 5(3):549-54. PubMed ID: 26276607 [Abstract] [Full Text] [Related]
10. Resonant Raman spectroscopy of twisted multilayer graphene. Wu JB, Zhang X, Ijäs M, Han WP, Qiao XF, Li XL, Jiang DS, Ferrari AC, Tan PH. Nat Commun; 2014 Nov 10; 5():5309. PubMed ID: 25382099 [Abstract] [Full Text] [Related]
11. Controllable chemical vapor deposition growth of few layer graphene for electronic devices. Wei D, Wu B, Guo Y, Yu G, Liu Y. Acc Chem Res; 2013 Jan 15; 46(1):106-15. PubMed ID: 22809220 [Abstract] [Full Text] [Related]
13. Designed CVD growth of graphene via process engineering. Yan K, Fu L, Peng H, Liu Z. Acc Chem Res; 2013 Oct 15; 46(10):2263-74. PubMed ID: 23869401 [Abstract] [Full Text] [Related]
14. Second-order overtone and combination Raman modes of graphene layers in the range of 1690-2150 cm(-1). Cong C, Yu T, Saito R, Dresselhaus GF, Dresselhaus MS. ACS Nano; 2011 Mar 22; 5(3):1600-5. PubMed ID: 21344883 [Abstract] [Full Text] [Related]
15. Rapid identification of stacking orientation in isotopically labeled chemical-vapor grown bilayer graphene by Raman spectroscopy. Fang W, Hsu AL, Caudillo R, Song Y, Birdwell AG, Zakar E, Kalbac M, Dubey M, Palacios T, Dresselhaus MS, Araujo PT, Kong J. Nano Lett; 2013 Apr 10; 13(4):1541-8. PubMed ID: 23470052 [Abstract] [Full Text] [Related]
19. Tailoring the electrical properties of graphene layers by molecular doping. Singh AK, Ahmad M, Singh VK, Shin K, Seo Y, Eom J. ACS Appl Mater Interfaces; 2013 Jun 12; 5(11):5276-81. PubMed ID: 23676855 [Abstract] [Full Text] [Related]