These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
Pubmed for Handhelds
PUBMED FOR HANDHELDS
Journal Abstract Search
195 related items for PubMed ID: 25580886
1. Catalyst orientation-induced growth of defect-free zinc-blende structured ⟨001̅⟩ InAs nanowires. Zhang Z, Zheng K, Lu ZY, Chen PP, Lu W, Zou J. Nano Lett; 2015 Feb 11; 15(2):876-82. PubMed ID: 25580886 [Abstract] [Full Text] [Related]
4. High-quality epitaxial wurtzite structured InAs nanosheets grown in MBE. Sun Q, Gao H, Zhang X, Yao X, Xu S, Zheng K, Chen P, Lu W, Zou J. Nanoscale; 2020 Jan 07; 12(1):271-276. PubMed ID: 31819937 [Abstract] [Full Text] [Related]
5. Free-Standing InAs Nanobelts Driven by Polarity in MBE. Sun Q, Gao H, Zhang X, Yao X, Zheng K, Chen P, Lu W, Zou J. ACS Appl Mater Interfaces; 2019 Nov 27; 11(47):44609-44616. PubMed ID: 31684720 [Abstract] [Full Text] [Related]
6. Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy. Wang CY, Hong YC, Ko ZJ, Su YW, Huang JH. Nanoscale Res Lett; 2017 Dec 27; 12(1):290. PubMed ID: 28438011 [Abstract] [Full Text] [Related]
10. Orientation Dependence of Electromechanical Characteristics of Defect-free InAs Nanowires. Zheng K, Zhang Z, Hu Y, Chen P, Lu W, Drennan J, Han X, Zou J. Nano Lett; 2016 Mar 09; 16(3):1787-93. PubMed ID: 26837494 [Abstract] [Full Text] [Related]
11. Influence of substrate orientation on the structural quality of GaAs nanowires in molecular beam epitaxy. Zhang Z, Shi SX, Chen PP, Lu W, Zou J. Nanotechnology; 2015 Jan 26; 26(25):255601. PubMed ID: 26024290 [Abstract] [Full Text] [Related]
12. In Situ TEM Observation of Crystal Structure Transformation in InAs Nanowires on Atomic Scale. Zhang Z, Liu N, Li L, Su J, Chen PP, Lu W, Gao Y, Zou J. Nano Lett; 2018 Oct 10; 18(10):6597-6603. PubMed ID: 30234307 [Abstract] [Full Text] [Related]
13. Dislocation-free axial InAs-on-GaAs nanowires on silicon. Beznasyuk DV, Robin E, Hertog MD, Claudon J, Hocevar M. Nanotechnology; 2017 Sep 08; 28(36):365602. PubMed ID: 28671871 [Abstract] [Full Text] [Related]
14. Crystal structure and transport in merged InAs nanowires MBE grown on (001) InAs. Kang JH, Cohen Y, Ronen Y, Heiblum M, Buczko R, Kacman P, Popovitz-Biro R, Shtrikman H. Nano Lett; 2013 Nov 13; 13(11):5190-6. PubMed ID: 24093328 [Abstract] [Full Text] [Related]
17. Crystal Phase Transformation in Self-Assembled InAs Nanowire Junctions on Patterned Si Substrates. Rieger T, Rosenbach D, Vakulov D, Heedt S, Schäpers T, Grützmacher D, Lepsa MI. Nano Lett; 2016 Mar 09; 16(3):1933-41. PubMed ID: 26881450 [Abstract] [Full Text] [Related]
18. Growth of Catalyst-Free Epitaxial InAs Nanowires on Si Wafers Using Metallic Masks. Soo MT, Zheng K, Gao Q, Tan HH, Jagadish C, Zou J. Nano Lett; 2016 Jul 13; 16(7):4189-93. PubMed ID: 27248817 [Abstract] [Full Text] [Related]
19. In situ TEM observation of the vapor-solid-solid growth of <001[combining macron]> InAs nanowires. Sun Q, Pan D, Li M, Zhao J, Chen P, Lu W, Zou J. Nanoscale; 2020 Jun 04; 12(21):11711-11717. PubMed ID: 32452500 [Abstract] [Full Text] [Related]