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Journal Abstract Search

290 related items for PubMed ID: 25769342

  • 1. Air-stable transport in graphene-contacted, fully encapsulated ultrathin black phosphorus-based field-effect transistors.
    Avsar A, Vera-Marun IJ, Tan JY, Watanabe K, Taniguchi T, Castro Neto AH, Özyilmaz B.
    ACS Nano; 2015 Apr 28; 9(4):4138-45. PubMed ID: 25769342
    [Abstract] [Full Text] [Related]

  • 2. Transport properties of pristine few-layer black phosphorus by van der Waals passivation in an inert atmosphere.
    Doganov RA, O'Farrell EC, Koenig SP, Yeo Y, Ziletti A, Carvalho A, Campbell DK, Coker DF, Watanabe K, Taniguchi T, Castro Neto AH, Özyilmaz B.
    Nat Commun; 2015 Apr 10; 6():6647. PubMed ID: 25858614
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  • 3. Low Schottky barrier black phosphorus field-effect devices with ferromagnetic tunnel contacts.
    Kamalakar MV, Madhushankar BN, Dankert A, Dash SP.
    Small; 2015 May 13; 11(18):2209-16. PubMed ID: 25586013
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  • 7. Electron Doping of Ultrathin Black Phosphorus with Cu Adatoms.
    Koenig SP, Doganov RA, Seixas L, Carvalho A, Tan JY, Watanabe K, Taniguchi T, Yakovlev N, Castro Neto AH, Özyilmaz B.
    Nano Lett; 2016 Apr 13; 16(4):2145-51. PubMed ID: 26938106
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  • 8. High-quality sandwiched black phosphorus heterostructure and its quantum oscillations.
    Chen X, Wu Y, Wu Z, Han Y, Xu S, Wang L, Ye W, Han T, He Y, Cai Y, Wang N.
    Nat Commun; 2015 Jun 23; 6():7315. PubMed ID: 26099721
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  • 10. Temperature-Dependent Transport in Ultrathin Black Phosphorus Field-Effect Transistors.
    Yan X, Wang H, Sanchez Esqueda I.
    Nano Lett; 2019 Jan 09; 19(1):482-487. PubMed ID: 30518214
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  • 11. Can a Black Phosphorus Schottky Barrier Transistor Be Good Enough?
    Quhe R, Peng X, Pan Y, Ye M, Wang Y, Zhang H, Feng S, Zhang Q, Shi J, Yang J, Yu D, Lei M, Lu J.
    ACS Appl Mater Interfaces; 2017 Feb 01; 9(4):3959-3966. PubMed ID: 28068757
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  • 12. Black Phosphorus Field-Effect Transistors with Work Function Tunable Contacts.
    Ma Y, Shen C, Zhang A, Chen L, Liu Y, Chen J, Liu Q, Li Z, Amer MR, Nilges T, Abbas AN, Zhou C.
    ACS Nano; 2017 Jul 25; 11(7):7126-7133. PubMed ID: 28653827
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  • 15. Anomalous Temperature Dependence in Metal-Black Phosphorus Contact.
    Li X, Grassi R, Li S, Li T, Xiong X, Low T, Wu Y.
    Nano Lett; 2018 Jan 10; 18(1):26-31. PubMed ID: 29207233
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  • 17. Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.
    Lee GH, Cui X, Kim YD, Arefe G, Zhang X, Lee CH, Ye F, Watanabe K, Taniguchi T, Kim P, Hone J.
    ACS Nano; 2015 Jul 28; 9(7):7019-26. PubMed ID: 26083310
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  • 18. Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient.
    Barreda JL, Keiper TD, Zhang M, Xiong P.
    ACS Appl Mater Interfaces; 2017 Apr 05; 9(13):12046-12053. PubMed ID: 28274114
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  • 20. Silicene field-effect transistors operating at room temperature.
    Tao L, Cinquanta E, Chiappe D, Grazianetti C, Fanciulli M, Dubey M, Molle A, Akinwande D.
    Nat Nanotechnol; 2015 Mar 05; 10(3):227-31. PubMed ID: 25643256
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