These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


Pubmed for Handhelds

PUBMED FOR HANDHELDS

Journal Abstract Search

381 related items for PubMed ID: 25785667

  • 1. Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions.
    Zhang K, Cao YL, Fang YW, Li Q, Zhang J, Duan CG, Yan SS, Tian YF, Huang R, Zheng RK, Kang SS, Chen YX, Liu GL, Mei LM.
    Nanoscale; 2015 Apr 14; 7(14):6334-9. PubMed ID: 25785667
    [Abstract] [Full Text] [Related]

  • 2.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 3.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 4.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 5.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 6. Realization of resistive switching and magnetoresistance in ZnO/ZnO-Co composite materials.
    Li X, Jia J, Li Y, Bai Y, Li J, Shi Y, Wang L, Xu X.
    Sci Rep; 2016 Sep 02; 6():31934. PubMed ID: 27585644
    [Abstract] [Full Text] [Related]

  • 7. Unidirectional Spin-Dependent Molecule-Ferromagnet Hybridized States Anisotropy in Cobalt Phthalocyanine Based Magnetic Tunnel Junctions.
    Barraud C, Bouzehouane K, Deranlot C, Fusil S, Jabbar H, Arabski J, Rakshit R, Kim DJ, Kieber C, Boukari S, Bowen M, Beaurepaire E, Seneor P, Mattana R, Petroff F.
    Phys Rev Lett; 2015 May 22; 114(20):206603. PubMed ID: 26047247
    [Abstract] [Full Text] [Related]

  • 8. Electrically tunable tunneling rectification magnetoresistance in magnetic tunneling junctions with asymmetric barriers.
    Wang J, Huang Q, Shi P, Zhang K, Tian Y, Yan S, Chen Y, Liu G, Kang S, Mei L.
    Nanoscale; 2017 Oct 26; 9(41):16073-16078. PubMed ID: 29034397
    [Abstract] [Full Text] [Related]

  • 9. Tunneling anisotropic magnetoresistance driven by magnetic phase transition.
    Chen XZ, Feng JF, Wang ZC, Zhang J, Zhong XY, Song C, Jin L, Zhang B, Li F, Jiang M, Tan YZ, Zhou XJ, Shi GY, Zhou XF, Han XD, Mao SC, Chen YH, Han XF, Pan F.
    Nat Commun; 2017 Sep 06; 8(1):449. PubMed ID: 28878205
    [Abstract] [Full Text] [Related]

  • 10. Magnetoresistance in Co-hBN-NiFe Tunnel Junctions Enhanced by Resonant Tunneling through Single Defects in Ultrathin hBN Barriers.
    Asshoff PU, Sambricio JL, Slizovskiy S, Rooney AP, Taniguchi T, Watanabe K, Haigh SJ, Fal'ko V, Grigorieva IV, Vera-Marun IJ.
    Nano Lett; 2018 Nov 14; 18(11):6954-6960. PubMed ID: 30372086
    [Abstract] [Full Text] [Related]

  • 11. Gate-Tunable Spin Exchange Interactions and Inversion of Magnetoresistance in Single Ferromagnetic ZnO Nanowires.
    Modepalli V, Jin MJ, Park J, Jo J, Kim JH, Baik JM, Seo C, Kim J, Yoo JW.
    ACS Nano; 2016 Apr 26; 10(4):4618-26. PubMed ID: 26964013
    [Abstract] [Full Text] [Related]

  • 12.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 13.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 14.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 15. Reversible electrical switching of spin polarization in multiferroic tunnel junctions.
    Pantel D, Goetze S, Hesse D, Alexe M.
    Nat Mater; 2012 Feb 26; 11(4):289-93. PubMed ID: 22367005
    [Abstract] [Full Text] [Related]

  • 16.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 17.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 18. Role of metal-oxide interface in determining the spin polarization of magnetic tunnel junctions.
    De Teresa JM, Barthelemy A, Fert A, Contour JP, Montaigne F, Seneor P.
    Science; 1999 Oct 15; 286(5439):507-9. PubMed ID: 10521341
    [Abstract] [Full Text] [Related]

  • 19.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 20.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

    Page: [Next] [New Search]
    of 20.