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Journal Abstract Search

612 related items for PubMed ID: 25817336

  • 1. Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon.
    Rigante S, Scarbolo P, Wipf M, Stoop RL, Bedner K, Buitrago E, Bazigos A, Bouvet D, Calame M, Schönenberger C, Ionescu AM.
    ACS Nano; 2015 May 26; 9(5):4872-81. PubMed ID: 25817336
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  • 3. The Optimization and Analysis of a Triple-Fin Heterostructure-on-Insulator Fin Field-Effect Transistor with a Stacked High-k Configuration and 10 nm Channel Length.
    Saha P, Sankar Dhar R, Nanda S, Kumar K, Alathbah M.
    Nanomaterials (Basel); 2023 Nov 23; 13(23):. PubMed ID: 38063707
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  • 5. A Feasible Alternative to FDSOI and FinFET: Optimization of W/La2O3/Si Planar PMOS with 14 nm Gate-Length.
    Mah SK, Ker PJ, Ahmad I, Zainul Abidin NF, Ali Gamel MM.
    Materials (Basel); 2021 Sep 30; 14(19):. PubMed ID: 34640118
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  • 7. Silicon nanowire ion sensitive field effect transistor with integrated Ag/AgCl electrode: pH sensing and noise characteristics.
    Kim S, Rim T, Kim K, Lee U, Baek E, Lee H, Baek CK, Meyyappan M, Deen MJ, Lee JS.
    Analyst; 2011 Dec 07; 136(23):5012-6. PubMed ID: 22068238
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  • 8. Novel 14-nm Scallop-Shaped FinFETs (S-FinFETs) on Bulk-Si Substrate.
    Xu W, Yin H, Ma X, Hong P, Xu M, Meng L.
    Nanoscale Res Lett; 2015 Dec 07; 10(1):958. PubMed ID: 26055484
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  • 12. Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel System.
    Nanda S, Dhar RS, Awwad F, Hussein MI.
    Nanomaterials (Basel); 2023 May 18; 13(10):. PubMed ID: 37242078
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  • 14. Design and Implementation of a pH Sensor for Micro Solution Based on Nanostructured Ion-Sensitive Field-Effect Transistor.
    Wang Y, Yang M, Wu C.
    Sensors (Basel); 2020 Dec 03; 20(23):. PubMed ID: 33287342
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  • 15. InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities.
    Convertino C, Zota C, Schmid H, Caimi D, Sousa M, Moselund K, Czornomaz L.
    Materials (Basel); 2018 Dec 27; 12(1):. PubMed ID: 30591676
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  • 16. Silicon-on-Insulator Double-Gate Ion-Sensitive Field-Effect Transistors Using Flexible Paper Substrate-Based Extended Gate for Cost-Effective Sensor Applications.
    Jeon JH, Cho WJ.
    J Nanosci Nanotechnol; 2019 Oct 01; 19(10):6668-6674. PubMed ID: 31027008
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  • 17. Nonplanar Nanoscale Fin Field Effect Transistors on Textile, Paper, Wood, Stone, and Vinyl via Soft Material-Enabled Double-Transfer Printing.
    Rojas JP, Torres Sevilla GA, Alfaraj N, Ghoneim MT, Kutbee AT, Sridharan A, Hussain MM.
    ACS Nano; 2015 May 26; 9(5):5255-63. PubMed ID: 25933370
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  • 18. Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint.
    Accastelli E, Scarbolo P, Ernst T, Palestri P, Selmi L, Guiducci C.
    Biosensors (Basel); 2016 Mar 15; 6(1):. PubMed ID: 26999232
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  • 19. Reducing Off-State and Leakage Currents by Dielectric Permittivity-Graded Stacked Gate Oxides on Trigate FinFETs: A TCAD Study.
    Ülkü A, Uçar E, Serin RB, Kaçar R, Artuç M, Menşur E, Oral AY.
    Micromachines (Basel); 2024 May 30; 15(6):. PubMed ID: 38930696
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  • 20. Asymmetric Drain Extension Dual-kk Trigate Underlap FinFET Based on RF/Analog Circuit.
    Han K, Qiao G, Deng Z, Zhang Y.
    Micromachines (Basel); 2017 Nov 09; 8(11):. PubMed ID: 30400520
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