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Journal Abstract Search

432 related items for PubMed ID: 25923041

  • 1. Arrayed van der Waals Vertical Heterostructures Based on 2D GaSe Grown by Molecular Beam Epitaxy.
    Yuan X, Tang L, Liu S, Wang P, Chen Z, Zhang C, Liu Y, Wang W, Zou Y, Liu C, Guo N, Zou J, Zhou P, Hu W, Xiu F.
    Nano Lett; 2015 May 13; 15(5):3571-7. PubMed ID: 25923041
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  • 2. van der Waals Epitaxy of GaSe/Graphene Heterostructure: Electronic and Interfacial Properties.
    Ben Aziza Z, Henck H, Pierucci D, Silly MG, Lhuillier E, Patriarche G, Sirotti F, Eddrief M, Ouerghi A.
    ACS Nano; 2016 Oct 25; 10(10):9679-9686. PubMed ID: 27715006
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  • 3. Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy.
    Li X, Lin MW, Lin J, Huang B, Puretzky AA, Ma C, Wang K, Zhou W, Pantelides ST, Chi M, Kravchenko I, Fowlkes J, Rouleau CM, Geohegan DB, Xiao K.
    Sci Adv; 2016 Apr 25; 2(4):e1501882. PubMed ID: 27152356
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  • 4. Van der Waals Epitaxial Growth of Two-Dimensional Single-Crystalline GaSe Domains on Graphene.
    Li X, Basile L, Huang B, Ma C, Lee J, Vlassiouk IV, Puretzky AA, Lin MW, Yoon M, Chi M, Idrobo JC, Rouleau CM, Sumpter BG, Geohegan DB, Xiao K.
    ACS Nano; 2015 Aug 25; 9(8):8078-88. PubMed ID: 26202730
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  • 6. Influence of Proximity to Supporting Substrate on van der Waals Epitaxy of Atomically Thin Graphene/Hexagonal Boron Nitride Heterostructures.
    Heilmann M, Prikhodko AS, Hanke M, Sabelfeld A, Borgardt NI, Lopes JMJ.
    ACS Appl Mater Interfaces; 2020 Feb 19; 12(7):8897-8907. PubMed ID: 31971775
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  • 8. P-GaSe/N-MoS2 Vertical Heterostructures Synthesized by van der Waals Epitaxy for Photoresponse Modulation.
    Zhou N, Wang R, Zhou X, Song H, Xiong X, Ding Y, Lü J, Gan L, Zhai T.
    Small; 2018 Feb 19; 14(7):. PubMed ID: 29319224
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  • 9. Layer-Controlled Chemical Vapor Deposition Growth of MoS2 Vertical Heterostructures via van der Waals Epitaxy.
    Samad L, Bladow SM, Ding Q, Zhuo J, Jacobberger RM, Arnold MS, Jin S.
    ACS Nano; 2016 Jul 26; 10(7):7039-46. PubMed ID: 27373305
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  • 10. Epitaxial 2D SnSe2/ 2D WSe2 van der Waals Heterostructures.
    Aretouli KE, Tsoutsou D, Tsipas P, Marquez-Velasco J, Aminalragia Giamini S, Kelaidis N, Psycharis V, Dimoulas A.
    ACS Appl Mater Interfaces; 2016 Sep 07; 8(35):23222-9. PubMed ID: 27537619
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  • 17. Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy.
    Liu CW, Dai JJ, Wu SK, Diep NQ, Huynh SH, Mai TT, Wen HC, Yuan CT, Chou WC, Shen JL, Luc HH.
    Sci Rep; 2020 Jul 31; 10(1):12972. PubMed ID: 32737426
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  • 18. Van der Waals Heterostructures for High-Performance Device Applications: Challenges and Opportunities.
    Liang SJ, Cheng B, Cui X, Miao F.
    Adv Mater; 2020 Jul 31; 32(27):e1903800. PubMed ID: 31608514
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  • 20. Advancements and Challenges in the Integration of Indium Arsenide and Van der Waals Heterostructures.
    Cheng T, Meng Y, Luo M, Xian J, Luo W, Wang W, Yue F, Ho JC, Yu C, Chu J.
    Small; 2024 Nov 31; 20(48):e2403129. PubMed ID: 39030967
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