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Journal Abstract Search

284 related items for PubMed ID: 25927420

  • 1. In(x)Ga(1-x)As nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology.
    Ameruddin AS, Fonseka HA, Caroff P, Wong-Leung J, Op het Veld RL, Boland JL, Johnston MB, Tan HH, Jagadish C.
    Nanotechnology; 2015 May 22; 26(20):205604. PubMed ID: 25927420
    [Abstract] [Full Text] [Related]

  • 2. Growth of InAs/InP core-shell nanowires with various pure crystal structures.
    Gorji Ghalamestani S, Heurlin M, Wernersson LE, Lehmann S, Dick KA.
    Nanotechnology; 2012 Jul 20; 23(28):285601. PubMed ID: 22717421
    [Abstract] [Full Text] [Related]

  • 3. Can antimonide-based nanowires form wurtzite crystal structure?
    Gorji Ghalamestani S, Lehmann S, Dick KA.
    Nanoscale; 2016 Feb 07; 8(5):2778-86. PubMed ID: 26763161
    [Abstract] [Full Text] [Related]

  • 4. Kinetic Engineering of Wurtzite and Zinc-Blende AlSb Shells on InAs Nanowires.
    Kindlund H, Zamani RR, Persson AR, Lehmann S, Wallenberg LR, Dick KA.
    Nano Lett; 2018 Sep 12; 18(9):5775-5781. PubMed ID: 30133288
    [Abstract] [Full Text] [Related]

  • 5. Self-catalyzed MBE grown GaAs/GaAs(x)Sb(1-x) core-shell nanowires in ZB and WZ crystal structures.
    Ghalamestani SG, Munshi AM, Dheeraj DL, Fimland BO, Weman H, Dick KA.
    Nanotechnology; 2013 Oct 11; 24(40):405601. PubMed ID: 24028926
    [Abstract] [Full Text] [Related]

  • 6. Zinc blende and wurtzite crystal phase mixing and transition in indium phosphide nanowires.
    Ikejiri K, Kitauchi Y, Tomioka K, Motohisa J, Fukui T.
    Nano Lett; 2011 Oct 12; 11(10):4314-8. PubMed ID: 21875079
    [Abstract] [Full Text] [Related]

  • 7. Excitonic properties of wurtzite InP nanowires grown on silicon substrate.
    Hadj Alouane MH, Chauvin N, Khmissi H, Naji K, Ilahi B, Maaref H, Patriarche G, Gendry M, Bru-Chevallier C.
    Nanotechnology; 2013 Jan 25; 24(3):035704. PubMed ID: 23262659
    [Abstract] [Full Text] [Related]

  • 8. Controlling the morphology, composition and crystal structure in gold-seeded GaAs(1-x)Sb(x) nanowires.
    Yuan X, Caroff P, Wong-Leung J, Tan HH, Jagadish C.
    Nanoscale; 2015 Mar 21; 7(11):4995-5003. PubMed ID: 25692266
    [Abstract] [Full Text] [Related]

  • 9. Radial Growth Evolution of InGaAs/InP Multi-Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy.
    Yang I, Zhang X, Zheng C, Gao Q, Li Z, Li L, Lockrey MN, Nguyen H, Caroff P, Etheridge J, Tan HH, Jagadish C, Wong-Leung J, Fu L.
    ACS Nano; 2018 Oct 23; 12(10):10374-10382. PubMed ID: 30281281
    [Abstract] [Full Text] [Related]

  • 10. Hole and Electron Effective Masses in Single InP Nanowires with a Wurtzite-Zincblende Homojunction.
    Tedeschi D, Fonseka HA, Blundo E, Granados Del Águila A, Guo Y, Tan HH, Christianen PCM, Jagadish C, Polimeni A, De Luca M.
    ACS Nano; 2020 Sep 22; 14(9):11613-11622. PubMed ID: 32865391
    [Abstract] [Full Text] [Related]

  • 11. Growth, structural and optical characterization of wurtzite GaP nanowires.
    Maliakkal CB, Gokhale M, Parmar J, Bapat RD, Chalke BA, Ghosh S, Bhattacharya A.
    Nanotechnology; 2019 Jun 21; 30(25):254002. PubMed ID: 30802882
    [Abstract] [Full Text] [Related]

  • 12. Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy.
    Dursap T, Vettori M, Botella C, Regreny P, Blanchard N, Gendry M, Chauvin N, Bugnet M, Danescu A, Penuelas J.
    Nanotechnology; 2021 Apr 09; 32(15):155602. PubMed ID: 33429384
    [Abstract] [Full Text] [Related]

  • 13. Crystal structure tuning in GaAs nanowires using HCl.
    Jacobsson D, Lehmann S, Dick KA.
    Nanoscale; 2014 Jul 21; 6(14):8257-64. PubMed ID: 24931099
    [Abstract] [Full Text] [Related]

  • 14. GaP-ZnS pseudobinary alloy nanowires.
    Park K, Lee JA, Im HS, Jung CS, Kim HS, Park J, Lee CL.
    Nano Lett; 2014 Oct 08; 14(10):5912-9. PubMed ID: 25234711
    [Abstract] [Full Text] [Related]

  • 15. Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques.
    Xu T, Dick KA, Plissard S, Nguyen TH, Makoudi Y, Berthe M, Nys JP, Wallart X, Grandidier B, Caroff P.
    Nanotechnology; 2012 Mar 09; 23(9):095702. PubMed ID: 22322440
    [Abstract] [Full Text] [Related]

  • 16. High optical quality single crystal phase wurtzite and zincblende InP nanowires.
    Vu TT, Zehender T, Verheijen MA, Plissard SR, Immink GW, Haverkort JE, Bakkers EP.
    Nanotechnology; 2013 Mar 22; 24(11):115705. PubMed ID: 23455417
    [Abstract] [Full Text] [Related]

  • 17. Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy.
    Dheeraj DL, Munshi AM, Scheffler M, van Helvoort AT, Weman H, Fimland BO.
    Nanotechnology; 2013 Jan 11; 24(1):015601. PubMed ID: 23220972
    [Abstract] [Full Text] [Related]

  • 18. Dependence of InGaP nanowire morphology and structure on molecular beam epitaxy growth conditions.
    Fakhr A, Haddara YM, Lapierre RR.
    Nanotechnology; 2010 Apr 23; 21(16):165601. PubMed ID: 20348594
    [Abstract] [Full Text] [Related]

  • 19. A general approach for sharp crystal phase switching in InAs, GaAs, InP, and GaP nanowires using only group V flow.
    Lehmann S, Wallentin J, Jacobsson D, Deppert K, Dick KA.
    Nano Lett; 2013 Sep 11; 13(9):4099-105. PubMed ID: 23902379
    [Abstract] [Full Text] [Related]

  • 20. Exploring Crystal Phase Switching in GaP Nanowires.
    Assali S, Gagliano L, Oliveira DS, Verheijen MA, Plissard SR, Feiner LF, Bakkers EP.
    Nano Lett; 2015 Dec 09; 15(12):8062-9. PubMed ID: 26539748
    [Abstract] [Full Text] [Related]

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