These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


Pubmed for Handhelds

PUBMED FOR HANDHELDS

Journal Abstract Search

326 related items for PubMed ID: 25932940

  • 1. Electronic Transport Properties of Epitaxial Si/SiGe Heterostructures Grown on Single-Crystal SiGe Nanomembranes.
    Li YS, Sookchoo P, Cui X, Mohr R, Savage DE, Foote RH, Jacobson RB, Sánchez-Pérez JR, Paskiewicz DM, Wu X, Ward DR, Coppersmith SN, Eriksson MA, Lagally MG.
    ACS Nano; 2015 May 26; 9(5):4891-9. PubMed ID: 25932940
    [Abstract] [Full Text] [Related]

  • 2.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 3.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 4.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 5. Strain engineered SiGe multiple-quantum-well nanomembranes for far-infrared intersubband device applications.
    Sookchoo P, Sudradjat FF, Kiefer AM, Durmaz H, Paiella R, Lagally MG.
    ACS Nano; 2013 Mar 26; 7(3):2326-34. PubMed ID: 23402572
    [Abstract] [Full Text] [Related]

  • 6. Elastically relaxed free-standing strained-silicon nanomembranes.
    Roberts MM, Klein LJ, Savage DE, Slinker KA, Friesen M, Celler G, Eriksson MA, Lagally MG.
    Nat Mater; 2006 May 26; 5(5):388-93. PubMed ID: 16604081
    [Abstract] [Full Text] [Related]

  • 7. Quantum Hall effect in polar oxide heterostructures.
    Tsukazaki A, Ohtomo A, Kita T, Ohno Y, Ohno H, Kawasaki M.
    Science; 2007 Mar 09; 315(5817):1388-91. PubMed ID: 17255474
    [Abstract] [Full Text] [Related]

  • 8. Use of quantum effects as potential qualifying metrics for "quantum grade silicon".
    Ramanayaka AN, Tang K, Hagmann JA, Kim HS, Simons DS, Richter CA, Pomeroy JM.
    AIP Adv; 2019 Mar 09; 9(12):. PubMed ID: 38680503
    [Abstract] [Full Text] [Related]

  • 9. Shubnikov-de Haas and de Haas-van Alphen oscillations in Czochralski grown CoSi single crystal.
    Sasmal S, Dwari G, Baran Maity B, Saini V, Thamizhavel A, Mondal R.
    J Phys Condens Matter; 2022 Aug 24; 34(42):. PubMed ID: 35961292
    [Abstract] [Full Text] [Related]

  • 10.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 11.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 12.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 13.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 14.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 15. GaN/NbN epitaxial semiconductor/superconductor heterostructures.
    Yan R, Khalsa G, Vishwanath S, Han Y, Wright J, Rouvimov S, Katzer DS, Nepal N, Downey BP, Muller DA, Xing HG, Meyer DJ, Jena D.
    Nature; 2018 Mar 07; 555(7695):183-189. PubMed ID: 29516996
    [Abstract] [Full Text] [Related]

  • 16. Control of three-dimensional island growth with mechanically responsive single-crystal nanomembrane substrates.
    Kim-Lee HJ, Savage DE, Ritz CS, Lagally MG, Turner KT.
    Phys Rev Lett; 2009 Jun 05; 102(22):226103. PubMed ID: 19658881
    [Abstract] [Full Text] [Related]

  • 17. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se.
    Wu J, Yuan H, Meng M, Chen C, Sun Y, Chen Z, Dang W, Tan C, Liu Y, Yin J, Zhou Y, Huang S, Xu HQ, Cui Y, Hwang HY, Liu Z, Chen Y, Yan B, Peng H.
    Nat Nanotechnol; 2017 Jul 05; 12(6):530-534. PubMed ID: 28369044
    [Abstract] [Full Text] [Related]

  • 18. Epitaxial SrTiO3 films with electron mobilities exceeding 30,000 cm2 V(-1) s(-1).
    Son J, Moetakef P, Jalan B, Bierwagen O, Wright NJ, Engel-Herbert R, Stemmer S.
    Nat Mater; 2010 Jun 05; 9(6):482-4. PubMed ID: 20364139
    [Abstract] [Full Text] [Related]

  • 19. Tunable anomalous Hall effect in a nonferromagnetic system.
    Cumings J, Moore LS, Chou HT, Ku KC, Xiang G, Crooker SA, Samarth N, Goldhaber-Gordon D.
    Phys Rev Lett; 2006 May 19; 96(19):196404. PubMed ID: 16803118
    [Abstract] [Full Text] [Related]

  • 20. Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate.
    Volk C, Chatterjee A, Ansaloni F, Marcus CM, Kuemmeth F.
    Nano Lett; 2019 Aug 14; 19(8):5628-5633. PubMed ID: 31339321
    [Abstract] [Full Text] [Related]

    Page: [Next] [New Search]
    of 17.