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Pubmed for Handhelds

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Journal Abstract Search

452 related items for PubMed ID: 25969309

  • 21. Ultra-low-energy all-CMOS modulator integrated with driver.
    Zheng X, Lexau J, Luo Y, Thacker H, Pinguet T, Mekis A, Li G, Shi J, Amberg P, Pinckney N, Raj K, Ho R, Cunningham JE, Krishnamoorthy AV.
    Opt Express; 2010 Feb 01; 18(3):3059-70. PubMed ID: 20174136
    [Abstract] [Full Text] [Related]

  • 22. NDR-effect vertical-illumination-type Ge-on-Si avalanche photodetector.
    Kim G, Kim S, Kim SA, Oh JH, Jang KS.
    Opt Lett; 2018 Nov 15; 43(22):5583-5586. PubMed ID: 30439900
    [Abstract] [Full Text] [Related]

  • 23. 10 Gb/s operation of photonic crystal silicon optical modulators.
    Nguyen HC, Sakai Y, Shinkawa M, Ishikura N, Baba T.
    Opt Express; 2011 Jul 04; 19(14):13000-7. PubMed ID: 21747452
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  • 26. 50-Gb/s silicon quadrature phase-shift keying modulator.
    Dong P, Chen L, Xie C, Buhl LL, Chen YK.
    Opt Express; 2012 Sep 10; 20(19):21181-6. PubMed ID: 23037242
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  • 28. An all-solid-state, WDM silicon photonic digital link for chip-to-chip communications.
    Thacker HD, Zheng X, Lexau J, Shafiiha R, Shubin I, Lin S, Djordjevic S, Amberg P, Chang E, Liu F, Simons J, Lee JH, Abed A, Liang H, Luo Y, Yao J, Feng D, Asghari M, Ho R, Raj K, Cunningham JE, Krishnamoorthy AV.
    Opt Express; 2015 May 18; 23(10):12808-22. PubMed ID: 26074535
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  • 29. Synchronous OEIC Integrating Receiver for Optically Reconfigurable Gate Arrays.
    Sánchez-Azqueta C, Goll B, Celma S, Zimmermann H.
    Sensors (Basel); 2016 May 25; 16(6):. PubMed ID: 27231915
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  • 30. High-sensitivity 10 Gbps Ge-on-Si photoreceiver operating at lambda approximately 1.55 microm.
    Joo J, Kim S, Kim IG, Jang KS, Kim G.
    Opt Express; 2010 Aug 02; 18(16):16474-9. PubMed ID: 20721034
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  • 31. Three-dimensional (3D) monolithically integrated photodetector and WDM receiver based on bulk silicon wafer.
    Song J, Luo X, Tu X, Jia L, Fang Q, Liow TY, Yu M, Lo GQ.
    Opt Express; 2014 Aug 11; 22(16):19546-54. PubMed ID: 25321037
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  • 32. Flip-chip integrated silicon Mach-Zehnder modulator with a 28nm fully depleted silicon-on-insulator CMOS driver.
    Yong Z, Shopov S, Mikkelsen JC, Mallard R, Mak JC, Voinigescu SP, Poon JK.
    Opt Express; 2017 Mar 20; 25(6):6112-6121. PubMed ID: 28380966
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  • 35. A 40 Gbit/s optical link on a 300-mm silicon platform.
    Marris-Morini D, Virot L, Baudot C, Fédéli JM, Rasigade G, Perez-Galacho D, Hartmann JM, Olivier S, Brindel P, Crozat P, Bœuf F, Vivien L.
    Opt Express; 2014 Mar 24; 22(6):6674-9. PubMed ID: 24664016
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  • 36. 10.7 Gb/s reflective electroabsorption modulator monolithically integrated with semiconductor optical amplifier for colorless WDM-PON.
    Kim HS, Kim DC, Kim KS, Choi BS, Kwon OK.
    Opt Express; 2010 Oct 25; 18(22):23324-30. PubMed ID: 21164673
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  • 37. High-speed receiver based on waveguide germanium photodetector wire-bonded to 90nm SOI CMOS amplifier.
    Pan H, Assefa S, Green WM, Kuchta DM, Schow CL, Rylyakov AV, Lee BG, Baks CW, Shank SM, Vlasov YA.
    Opt Express; 2012 Jul 30; 20(16):18145-55. PubMed ID: 23038362
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  • 38. Experimental parametric study of 128 Gb/s PAM-4 transmission system using a multi-electrode silicon photonic Mach Zehnder modulator.
    Samani A, Patel D, Chagnon M, El-Fiky E, Li R, Jacques M, Abadía N, Veerasubramanian V, Plant DV.
    Opt Express; 2017 Jun 12; 25(12):13252-13262. PubMed ID: 28788860
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  • 39. Experimental demonstration of a 160 Gbit/s 3D-integrated silicon photonics receiver with 1.2-pJ/bit power consumption.
    Wu D, Wang D, Chen D, Yan J, Dang Z, Feng J, Chen S, Feng P, Zhang H, Fu Y, Wang L, Hu X, Xiao X, Yu S.
    Opt Express; 2023 Jan 30; 31(3):4129-4139. PubMed ID: 36785388
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