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Journal Abstract Search

337 related items for PubMed ID: 26024290

  • 1. Influence of substrate orientation on the structural quality of GaAs nanowires in molecular beam epitaxy.
    Zhang Z, Shi SX, Chen PP, Lu W, Zou J.
    Nanotechnology; 2015 Jan 26; 26(25):255601. PubMed ID: 26024290
    [Abstract] [Full Text] [Related]

  • 2. Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy.
    Tchernycheva M, Harmand JC, Patriarche G, Travers L, Cirlin GE.
    Nanotechnology; 2006 Aug 28; 17(16):4025-30. PubMed ID: 21727532
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  • 3. Stages in molecular beam epitaxy growth of GaAs nanowires studied by x-ray diffraction.
    Mariager SO, Lauridsen SL, Sørensen CB, Dohn A, Willmott PR, Nygård J, Feidenhans'l R.
    Nanotechnology; 2010 Mar 19; 21(11):115603. PubMed ID: 20173223
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  • 4. Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy.
    Wang CY, Hong YC, Ko ZJ, Su YW, Huang JH.
    Nanoscale Res Lett; 2017 Dec 19; 12(1):290. PubMed ID: 28438011
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  • 5. Catalyst orientation-induced growth of defect-free zinc-blende structured ⟨001̅⟩ InAs nanowires.
    Zhang Z, Zheng K, Lu ZY, Chen PP, Lu W, Zou J.
    Nano Lett; 2015 Feb 11; 15(2):876-82. PubMed ID: 25580886
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  • 7. Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy.
    Dheeraj DL, Munshi AM, Scheffler M, van Helvoort AT, Weman H, Fimland BO.
    Nanotechnology; 2013 Jan 11; 24(1):015601. PubMed ID: 23220972
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  • 8. Self-catalyzed growth of GaAs nanowires on cleaved Si by molecular beam epitaxy.
    Jabeen F, Grillo V, Rubini S, Martelli F.
    Nanotechnology; 2008 Jul 09; 19(27):275711. PubMed ID: 21828723
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  • 9. Defect-free zinc-blende structured InAs nanowires realized by in situ two V/III ratio growth in molecular beam epitaxy.
    Zhang Z, Lu ZY, Chen PP, Lu W, Zou J.
    Nanoscale; 2015 Aug 07; 7(29):12592-7. PubMed ID: 26145435
    [Abstract] [Full Text] [Related]

  • 10. Mechanism of self-assembled growth of ordered GaAs nanowire arrays by metalorganic vapor phase epitaxy on GaAs vicinal substrates.
    Mohan P, Bag R, Singh S, Kumar A, Tyagi R.
    Nanotechnology; 2012 Jan 20; 23(2):025601. PubMed ID: 22166369
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  • 11. Zinc blende GaAsSb nanowires grown by molecular beam epitaxy.
    Dheeraj DL, Patriarche G, Largeau L, Zhou HL, van Helvoort AT, Glas F, Harmand JC, Fimland BO, Weman H.
    Nanotechnology; 2008 Jul 09; 19(27):275605. PubMed ID: 21828712
    [Abstract] [Full Text] [Related]

  • 12. High-quality epitaxial wurtzite structured InAs nanosheets grown in MBE.
    Sun Q, Gao H, Zhang X, Yao X, Xu S, Zheng K, Chen P, Lu W, Zou J.
    Nanoscale; 2020 Jan 07; 12(1):271-276. PubMed ID: 31819937
    [Abstract] [Full Text] [Related]

  • 13. Self-catalyzed MBE grown GaAs/GaAs(x)Sb(1-x) core-shell nanowires in ZB and WZ crystal structures.
    Ghalamestani SG, Munshi AM, Dheeraj DL, Fimland BO, Weman H, Dick KA.
    Nanotechnology; 2013 Oct 11; 24(40):405601. PubMed ID: 24028926
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  • 14. Morphology- and orientation-controlled gallium arsenide nanowires on silicon substrates.
    Ihn SG, Song JI, Kim TW, Leem DS, Lee T, Lee SG, Koh EK, Song K.
    Nano Lett; 2007 Jan 11; 7(1):39-44. PubMed ID: 17212437
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  • 18. Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy.
    Bauer B, Rudolph A, Soda M, Fontcuberta i Morral A, Zweck J, Schuh D, Reiger E.
    Nanotechnology; 2010 Oct 29; 21(43):435601. PubMed ID: 20876983
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  • 19. Tuning the growth mode of nanowires via the interaction among seeds, substrates and beam fluxes.
    Zannier V, Grillo V, Martelli F, Plaisier JR, Lausi A, Rubini S.
    Nanoscale; 2014 Jul 21; 6(14):8392-9. PubMed ID: 24942288
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  • 20. Epitaxial GaAs/AlGaAs core-multishell nanowires with enhanced photoluminescence lifetime.
    Zhou C, Zhang XT, Zheng K, Chen PP, Matsumura S, Lu W, Zou J.
    Nanoscale; 2019 Apr 04; 11(14):6859-6865. PubMed ID: 30912781
    [Abstract] [Full Text] [Related]

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