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Journal Abstract Search

1862 related items for PubMed ID: 26039108

  • 1. Van der Waals Epitaxy of Two-Dimensional MoS2-Graphene Heterostructures in Ultrahigh Vacuum.
    Miwa JA, Dendzik M, Grønborg SS, Bianchi M, Lauritsen JV, Hofmann P, Ulstrup S.
    ACS Nano; 2015 Jun 23; 9(6):6502-10. PubMed ID: 26039108
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  • 2. Large area molybdenum disulphide- epitaxial graphene vertical Van der Waals heterostructures.
    Pierucci D, Henck H, Naylor CH, Sediri H, Lhuillier E, Balan A, Rault JE, Dappe YJ, Bertran F, Fèvre PL, Johnson ATC, Ouerghi A.
    Sci Rep; 2016 Jun 01; 6():26656. PubMed ID: 27246929
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  • 4. Interface properties of CVD grown graphene transferred onto MoS2(0001).
    Coy Diaz H, Addou R, Batzill M.
    Nanoscale; 2014 Jan 21; 6(2):1071-8. PubMed ID: 24297086
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  • 7. Freestanding van der Waals heterostructures of graphene and transition metal dichalcogenides.
    Azizi A, Eichfeld S, Geschwind G, Zhang K, Jiang B, Mukherjee D, Hossain L, Piasecki AF, Kabius B, Robinson JA, Alem N.
    ACS Nano; 2015 May 26; 9(5):4882-90. PubMed ID: 25885122
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  • 8. Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures.
    Pierucci D, Henck H, Avila J, Balan A, Naylor CH, Patriarche G, Dappe YJ, Silly MG, Sirotti F, Johnson AT, Asensio MC, Ouerghi A.
    Nano Lett; 2016 Jul 13; 16(7):4054-61. PubMed ID: 27281693
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  • 9. Direct observation of interlayer hybridization and Dirac relativistic carriers in graphene/MoS₂ van der Waals heterostructures.
    Diaz HC, Avila J, Chen C, Addou R, Asensio MC, Batzill M.
    Nano Lett; 2015 Feb 11; 15(2):1135-40. PubMed ID: 25629211
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  • 11. Transition metal dichalcogenides and beyond: synthesis, properties, and applications of single- and few-layer nanosheets.
    Lv R, Robinson JA, Schaak RE, Sun D, Sun Y, Mallouk TE, Terrones M.
    Acc Chem Res; 2015 Jan 20; 48(1):56-64. PubMed ID: 25490673
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  • 15. Printable Transfer-Free and Wafer-Size MoS2/Graphene van der Waals Heterostructures for High-Performance Photodetection.
    Liu Q, Cook B, Gong M, Gong Y, Ewing D, Casper M, Stramel A, Wu J.
    ACS Appl Mater Interfaces; 2017 Apr 12; 9(14):12728-12733. PubMed ID: 28322041
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  • 16. van der Waals Epitaxy of GaSe/Graphene Heterostructure: Electronic and Interfacial Properties.
    Ben Aziza Z, Henck H, Pierucci D, Silly MG, Lhuillier E, Patriarche G, Sirotti F, Eddrief M, Ouerghi A.
    ACS Nano; 2016 Oct 25; 10(10):9679-9686. PubMed ID: 27715006
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  • 17. Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride.
    Ruzmetov D, Zhang K, Stan G, Kalanyan B, Bhimanapati GR, Eichfeld SM, Burke RA, Shah PB, O'Regan TP, Crowne FJ, Birdwell AG, Robinson JA, Davydov AV, Ivanov TG.
    ACS Nano; 2016 Mar 22; 10(3):3580-8. PubMed ID: 26866442
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  • 18. In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy.
    Zuo Z, Xu Z, Zheng R, Khanaki A, Zheng JG, Liu J.
    Sci Rep; 2015 Oct 07; 5():14760. PubMed ID: 26442629
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