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235 related items for PubMed ID: 26145435

  • 1. Defect-free zinc-blende structured InAs nanowires realized by in situ two V/III ratio growth in molecular beam epitaxy.
    Zhang Z, Lu ZY, Chen PP, Lu W, Zou J.
    Nanoscale; 2015 Aug 07; 7(29):12592-7. PubMed ID: 26145435
    [Abstract] [Full Text] [Related]

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  • 3. Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy.
    Wang CY, Hong YC, Ko ZJ, Su YW, Huang JH.
    Nanoscale Res Lett; 2017 Dec 07; 12(1):290. PubMed ID: 28438011
    [Abstract] [Full Text] [Related]

  • 4. Selective area growth of in-plane InAs nanowires and nanowire networks on Si substrates by molecular-beam epitaxy.
    Liu L, Wen L, He F, Zhuo R, Pan D, Zhao J.
    Nanotechnology; 2023 Nov 24; 35(6):. PubMed ID: 37944189
    [Abstract] [Full Text] [Related]

  • 5. Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy.
    Koblmüller G, Hertenberger S, Vizbaras K, Bichler M, Bao F, Zhang JP, Abstreiter G.
    Nanotechnology; 2010 Sep 10; 21(36):365602. PubMed ID: 20702932
    [Abstract] [Full Text] [Related]

  • 6. Defect-free <110> zinc-blende structured InAs nanowires catalyzed by palladium.
    Xu H, Wang Y, Guo Y, Liao Z, Gao Q, Tan HH, Jagadish C, Zou J.
    Nano Lett; 2012 Nov 14; 12(11):5744-9. PubMed ID: 23030768
    [Abstract] [Full Text] [Related]

  • 7. Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy.
    Dheeraj DL, Munshi AM, Scheffler M, van Helvoort AT, Weman H, Fimland BO.
    Nanotechnology; 2013 Jan 11; 24(1):015601. PubMed ID: 23220972
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  • 8. Catalyst-free growth of InAs nanowires on Si (111) by CBE.
    Gomes UP, Ercolani D, Sibirev NV, Gemmi M, Dubrovskii VG, Beltram F, Sorba L.
    Nanotechnology; 2015 Oct 16; 26(41):415604. PubMed ID: 26404459
    [Abstract] [Full Text] [Related]

  • 9. Crystal phase control in GaAs nanowires: opposing trends in the Ga- and As-limited growth regimes.
    Lehmann S, Jacobsson D, Dick KA.
    Nanotechnology; 2015 Jul 31; 26(30):301001. PubMed ID: 26160888
    [Abstract] [Full Text] [Related]

  • 10. Gold-free growth of GaAs nanowires on silicon: arrays and polytypism.
    Plissard S, Dick KA, Larrieu G, Godey S, Addad A, Wallart X, Caroff P.
    Nanotechnology; 2010 Sep 24; 21(38):385602. PubMed ID: 20798467
    [Abstract] [Full Text] [Related]

  • 11. Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy.
    So H, Pan D, Li L, Zhao J.
    Nanotechnology; 2017 Mar 01; 28(13):135704. PubMed ID: 28256450
    [Abstract] [Full Text] [Related]

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  • 13. Influence of substrate orientation on the structural quality of GaAs nanowires in molecular beam epitaxy.
    Zhang Z, Shi SX, Chen PP, Lu W, Zou J.
    Nanotechnology; 2015 Jan 26; 26(25):255601. PubMed ID: 26024290
    [Abstract] [Full Text] [Related]

  • 14. Dislocation-free axial InAs-on-GaAs nanowires on silicon.
    Beznasyuk DV, Robin E, Hertog MD, Claudon J, Hocevar M.
    Nanotechnology; 2017 Sep 08; 28(36):365602. PubMed ID: 28671871
    [Abstract] [Full Text] [Related]

  • 15. In Situ TEM Observation of Crystal Structure Transformation in InAs Nanowires on Atomic Scale.
    Zhang Z, Liu N, Li L, Su J, Chen PP, Lu W, Gao Y, Zou J.
    Nano Lett; 2018 Oct 10; 18(10):6597-6603. PubMed ID: 30234307
    [Abstract] [Full Text] [Related]

  • 16. Growth of defect-free GaP nanowires.
    Husanu E, Ercolani D, Gemmi M, Sorba L.
    Nanotechnology; 2014 May 23; 25(20):205601. PubMed ID: 24785358
    [Abstract] [Full Text] [Related]

  • 17. Control of the crystal structure of InAs nanowires by tuning contributions of adatom diffusion.
    Huang H, Ren X, Ye X, Guo J, Wang Q, Zhang X, Cai S, Huang Y.
    Nanotechnology; 2010 Nov 26; 21(47):475602. PubMed ID: 21030767
    [Abstract] [Full Text] [Related]

  • 18. Self-catalyzed VLS grown InAs nanowires with twinning superlattices.
    Grap T, Rieger T, Blömers Ch, Schäpers T, Grützmacher D, Lepsa MI.
    Nanotechnology; 2013 Aug 23; 24(33):335601. PubMed ID: 23881182
    [Abstract] [Full Text] [Related]

  • 19. Wurtzite/Zinc-Blende 'K'-shape InAs Nanowires with Embedded Two-Dimensional Wurtzite Plates.
    Kang JH, Galicka M, Kacman P, Shtrikman H.
    Nano Lett; 2017 Jan 11; 17(1):531-537. PubMed ID: 28002676
    [Abstract] [Full Text] [Related]

  • 20. Defect-free thin InAs nanowires grown using molecular beam epitaxy.
    Zhang Z, Chen PP, Lu W, Zou J.
    Nanoscale; 2016 Jan 21; 8(3):1401-6. PubMed ID: 26671780
    [Abstract] [Full Text] [Related]

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