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PUBMED FOR HANDHELDS

Journal Abstract Search


992 related items for PubMed ID: 26148216

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  • 2. Effects of P-Type SnOx Thin-Film Transistors with N₂ and O₂ Ambient Furnace Annealing.
    Zhang YX, Wu CH, Chang KM, Chen YM, Xu N, Tsai KC.
    J Nanosci Nanotechnol; 2020 Jul 01; 20(7):4069-4072. PubMed ID: 31968422
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  • 5. Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters.
    Luo H, Liang L, Cao H, Dai M, Lu Y, Wang M.
    ACS Appl Mater Interfaces; 2015 Aug 12; 7(31):17023-31. PubMed ID: 26189702
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  • 9. High-Performance and Radiation-Hardened Solution-Processed ZrLaO Gate Dielectrics for Large-Area Applications.
    Fang Y, Zhao C, Mitrovic IZ, Zhao C.
    ACS Appl Mater Interfaces; 2021 Oct 27; 13(42):50101-50110. PubMed ID: 34636544
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  • 11. Selective Conversion from p-Type to n-Type of Printed Bottom-Gate Carbon Nanotube Thin-Film Transistors and Application in Complementary Metal-Oxide-Semiconductor Inverters.
    Xu Q, Zhao J, Pecunia V, Xu W, Zhou C, Dou J, Gu W, Lin J, Mo L, Zhao Y, Cui Z.
    ACS Appl Mater Interfaces; 2017 Apr 12; 9(14):12750-12758. PubMed ID: 28337913
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  • 12. High-performance solution-processed amorphous zinc-indium-tin oxide thin-film transistors.
    Kim MG, Kim HS, Ha YG, He J, Kanatzidis MG, Facchetti A, Marks TJ.
    J Am Chem Soc; 2010 Aug 04; 132(30):10352-64. PubMed ID: 20662515
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  • 15. High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer.
    Yen TJ, Chin A, Gritsenko V.
    Nanomaterials (Basel); 2020 Oct 28; 10(11):. PubMed ID: 33126463
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  • 18. Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors.
    Shin MG, Bae KH, Jeong HS, Kim DH, Cha HS, Kwon HI.
    Micromachines (Basel); 2020 Sep 30; 11(10):. PubMed ID: 33008074
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  • 19. Influence of Oxygen Partial Pressure on Radio Frequency Magnetron Sputtered Amorphous InZnSnO Thin Film Transistors.
    Lestari AD, Putri M, Heo YW, Lee HY.
    J Nanosci Nanotechnol; 2020 Jan 01; 20(1):252-256. PubMed ID: 31383163
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