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PUBMED FOR HANDHELDS

Journal Abstract Search


1364 related items for PubMed ID: 26202730

  • 1. Van der Waals Epitaxial Growth of Two-Dimensional Single-Crystalline GaSe Domains on Graphene.
    Li X, Basile L, Huang B, Ma C, Lee J, Vlassiouk IV, Puretzky AA, Lin MW, Yoon M, Chi M, Idrobo JC, Rouleau CM, Sumpter BG, Geohegan DB, Xiao K.
    ACS Nano; 2015 Aug 25; 9(8):8078-88. PubMed ID: 26202730
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  • 2. Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy.
    Li X, Lin MW, Lin J, Huang B, Puretzky AA, Ma C, Wang K, Zhou W, Pantelides ST, Chi M, Kravchenko I, Fowlkes J, Rouleau CM, Geohegan DB, Xiao K.
    Sci Adv; 2016 Apr 25; 2(4):e1501882. PubMed ID: 27152356
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  • 3. van der Waals Epitaxy of GaSe/Graphene Heterostructure: Electronic and Interfacial Properties.
    Ben Aziza Z, Henck H, Pierucci D, Silly MG, Lhuillier E, Patriarche G, Sirotti F, Eddrief M, Ouerghi A.
    ACS Nano; 2016 Oct 25; 10(10):9679-9686. PubMed ID: 27715006
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  • 6. Layer-Controlled Chemical Vapor Deposition Growth of MoS2 Vertical Heterostructures via van der Waals Epitaxy.
    Samad L, Bladow SM, Ding Q, Zhuo J, Jacobberger RM, Arnold MS, Jin S.
    ACS Nano; 2016 Jul 26; 10(7):7039-46. PubMed ID: 27373305
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  • 9. Arrayed van der Waals Vertical Heterostructures Based on 2D GaSe Grown by Molecular Beam Epitaxy.
    Yuan X, Tang L, Liu S, Wang P, Chen Z, Zhang C, Liu Y, Wang W, Zou Y, Liu C, Guo N, Zou J, Zhou P, Hu W, Xiu F.
    Nano Lett; 2015 May 13; 15(5):3571-7. PubMed ID: 25923041
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  • 10. P-GaSe/N-MoS2 Vertical Heterostructures Synthesized by van der Waals Epitaxy for Photoresponse Modulation.
    Zhou N, Wang R, Zhou X, Song H, Xiong X, Ding Y, Lü J, Gan L, Zhai T.
    Small; 2018 Feb 13; 14(7):. PubMed ID: 29319224
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  • 11. PbI2-MoS2 Heterojunction: van der Waals Epitaxial Growth and Energy Band Alignment.
    Xiao J, Liu J, Sun K, Zhao Y, Shao Z, Liu X, Yuan Y, Li Y, Xie H, Song F, Gao Y, Huang H.
    J Phys Chem Lett; 2019 Aug 01; 10(15):4203-4208. PubMed ID: 31291727
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  • 12. Indirect Interlayer Bonding in Graphene-Topological Insulator van der Waals Heterostructure: Giant Spin-Orbit Splitting of the Graphene Dirac States.
    Rajput S, Li YY, Weinert M, Li L.
    ACS Nano; 2016 Sep 27; 10(9):8450-6. PubMed ID: 27617796
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  • 13. Coincident-site lattice matching during van der Waals epitaxy.
    Boschker JE, Galves LA, Flissikowski T, Lopes JM, Riechert H, Calarco R.
    Sci Rep; 2015 Dec 14; 5():18079. PubMed ID: 26658715
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  • 15. Large-Area Synthesis of Ferromagnetic Fe5- x GeTe2 /Graphene van der Waals Heterostructures with Curie Temperature above Room Temperature.
    Lv H, da Silva A, Figueroa AI, Guillemard C, Aguirre IF, Camosi L, Aballe L, Valvidares M, Valenzuela SO, Schubert J, Schmidbauer M, Herfort J, Hanke M, Trampert A, Engel-Herbert R, Ramsteiner M, Lopes JMJ.
    Small; 2023 Sep 14; 19(39):e2302387. PubMed ID: 37231567
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  • 16. Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure.
    Sediri H, Pierucci D, Hajlaoui M, Henck H, Patriarche G, Dappe YJ, Yuan S, Toury B, Belkhou R, Silly MG, Sirotti F, Boutchich M, Ouerghi A.
    Sci Rep; 2015 Nov 20; 5():16465. PubMed ID: 26585245
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  • 17. Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures.
    Yan F, Zhao L, Patanè A, Hu P, Wei X, Luo W, Zhang D, Lv Q, Feng Q, Shen C, Chang K, Eaves L, Wang K.
    Nanotechnology; 2017 Jul 07; 28(27):27LT01. PubMed ID: 28531090
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  • 18. Van der Waals Epitaxy of Two-Dimensional MoS2-Graphene Heterostructures in Ultrahigh Vacuum.
    Miwa JA, Dendzik M, Grønborg SS, Bianchi M, Lauritsen JV, Hofmann P, Ulstrup S.
    ACS Nano; 2015 Jun 23; 9(6):6502-10. PubMed ID: 26039108
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  • 19. Epitaxial Intercalation Growth of Scalable Hexagonal Boron Nitride/Graphene Bilayer Moiré Materials with Highly Convergent Interlayer Angles.
    Wang S, Crowther J, Kageshima H, Hibino H, Taniyasu Y.
    ACS Nano; 2021 Sep 28; 15(9):14384-14393. PubMed ID: 34519487
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  • 20. Fabrication and characterization of PbSe nanostructures on van der Waals surfaces of GaSe layered semiconductor crystals.
    Kudrynskyi ZR, Bakhtinov AP, Vodopyanov VN, Kovalyuk ZD, Tovarnitskii MV, Lytvyn OS.
    Nanotechnology; 2015 Nov 20; 26(46):465601. PubMed ID: 26511404
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