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Journal Abstract Search

528 related items for PubMed ID: 26291223

  • 1. A Pathway to Type-I Band Alignment in Ge/Si Core-Shell Nanowires.
    Kim J, Lee JH, Hong KH.
    J Phys Chem Lett; 2013 Jan 03; 4(1):121-6. PubMed ID: 26291223
    [Abstract] [Full Text] [Related]

  • 2. Size-dependent optical absorption modulation of Si/Ge and Ge/Si core/shell nanowires with different cross-sectional geometries.
    Luo S, Yu WB, He Y, Ouyang G.
    Nanotechnology; 2015 Feb 27; 26(8):085702. PubMed ID: 25649268
    [Abstract] [Full Text] [Related]

  • 3. Band structure of Si/Ge core-shell nanowires along the [110] direction modulated by external uniaxial strain.
    Peng X, Tang F, Logan P.
    J Phys Condens Matter; 2011 Mar 23; 23(11):115502. PubMed ID: 21358032
    [Abstract] [Full Text] [Related]

  • 4. Interplay of Quantum Confinement and Strain Effects in Type I to Type II Transition in GeSi Core-Shell Nanocrystals.
    Marri I, Grillo S, Amato M, Ossicini S, Pulci O.
    J Phys Chem C Nanomater Interfaces; 2023 Jan 19; 127(2):1209-1219. PubMed ID: 36704663
    [Abstract] [Full Text] [Related]

  • 5. BP/GaN and BP/GaP core/shell nanowires: theoretical insights into photovoltaic and gas-sensing abilities.
    Shukla RS, Zala VB, Gupta SK, Gajjar PN.
    Nanoscale; 2024 Nov 07; 16(43):20235-20251. PubMed ID: 39400256
    [Abstract] [Full Text] [Related]

  • 6. Enhanced Electron Mobility in Nonplanar Tensile Strained Si Epitaxially Grown on SixGe1-x Nanowires.
    Wen F, Tutuc E.
    Nano Lett; 2018 Jan 10; 18(1):94-100. PubMed ID: 29185763
    [Abstract] [Full Text] [Related]

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  • 8. Hole gas accumulation in Si/Ge core-shell and Si/Ge/Si core-double shell nanowires.
    Zhang X, Jevasuwan W, Pradel KC, Subramani T, Takei T, Fukata N.
    Nanoscale; 2018 Dec 07; 10(45):21062-21068. PubMed ID: 30187068
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  • 10. Surface dangling-bond States and band lineups in hydrogen-terminated Si, Ge, and Ge/si nanowires.
    Kagimura R, Nunes RW, Chacham H.
    Phys Rev Lett; 2007 Jan 12; 98(2):026801. PubMed ID: 17358629
    [Abstract] [Full Text] [Related]

  • 11. Characterization of impurity doping and stress in Si/Ge and Ge/Si core-shell nanowires.
    Fukata N, Mitome M, Sekiguchi T, Bando Y, Kirkham M, Hong JI, Wang ZL, Snyder RL.
    ACS Nano; 2012 Oct 23; 6(10):8887-95. PubMed ID: 22947081
    [Abstract] [Full Text] [Related]

  • 12. Production of three-dimensional quantum dot lattice of Ge/Si core-shell quantum dots and Si/Ge layers in an alumina glass matrix.
    Buljan M, Radić N, Sancho-Paramon J, Janicki V, Grenzer J, Bogdanović-Radović I, Siketić Z, Ivanda M, Utrobičić A, Hübner R, Weidauer R, Valeš V, Endres J, Car T, Jerčinović M, Roško J, Bernstorff S, Holy V.
    Nanotechnology; 2015 Feb 13; 26(6):065602. PubMed ID: 25605224
    [Abstract] [Full Text] [Related]

  • 13. Band gap modulation of Si-C binary core/shell nanowires by composition and ratio.
    Dong H, Guo Z, Gilmore K, Du C, Hou T, Lee ST, Li Y.
    Nanotechnology; 2015 Jul 10; 26(27):275201. PubMed ID: 26066560
    [Abstract] [Full Text] [Related]

  • 14. Coherently Strained Si-SixGe1-x Core-Shell Nanowire Heterostructures.
    Dillen DC, Wen F, Kim K, Tutuc E.
    Nano Lett; 2016 Jan 13; 16(1):392-8. PubMed ID: 26606651
    [Abstract] [Full Text] [Related]

  • 15. Composition-dependent band gaps and indirect-direct band gap transitions of group-IV semiconductor alloys.
    Zhu Z, Xiao J, Sun H, Hu Y, Cao R, Wang Y, Zhao L, Zhuang J.
    Phys Chem Chem Phys; 2015 Sep 07; 17(33):21605-10. PubMed ID: 26222374
    [Abstract] [Full Text] [Related]

  • 16. Single-impurity scattering and carrier mobility in doped Ge/Si core-shell nanowires.
    Lee H, Choi HJ.
    Nano Lett; 2010 Jun 09; 10(6):2207-10. PubMed ID: 20499894
    [Abstract] [Full Text] [Related]

  • 17. Efficient electron and hole doping in compositionally abrupt Si/Ge nanowires.
    Li P, Zhou R, Pan B, Zeng XC.
    Nanoscale; 2013 May 07; 5(9):3880-8. PubMed ID: 23525137
    [Abstract] [Full Text] [Related]

  • 18. Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode.
    Sun G, Soref RA, Cheng HH.
    Opt Express; 2010 Sep 13; 18(19):19957-65. PubMed ID: 20940887
    [Abstract] [Full Text] [Related]

  • 19. Understanding quantum confinement in nanowires: basics, applications and possible laws.
    Mohammad SN.
    J Phys Condens Matter; 2014 Oct 22; 26(42):423202. PubMed ID: 25245123
    [Abstract] [Full Text] [Related]

  • 20. Highly Transparent Contacts to the 1D Hole Gas in Ultrascaled Ge/Si Core/Shell Nanowires.
    Sistani M, Delaforce J, Kramer RBG, Roch N, Luong MA, den Hertog MI, Robin E, Smoliner J, Yao J, Lieber CM, Naud C, Lugstein A, Buisson O.
    ACS Nano; 2019 Dec 24; 13(12):14145-14151. PubMed ID: 31816231
    [Abstract] [Full Text] [Related]

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