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Journal Abstract Search

183 related items for PubMed ID: 26301840

  • 1. Plasma-Treated Thickness-Controlled Two-Dimensional Black Phosphorus and Its Electronic Transport Properties.
    Jia J, Jang SK, Lai S, Xu J, Choi YJ, Park JH, Lee S.
    ACS Nano; 2015 Sep 22; 9(9):8729-36. PubMed ID: 26301840
    [Abstract] [Full Text] [Related]

  • 2. Sulfur-Doped Black Phosphorus Field-Effect Transistors with Enhanced Stability.
    Lv W, Yang B, Wang B, Wan W, Ge Y, Yang R, Hao C, Xiang J, Zhang B, Zeng Z, Liu Z.
    ACS Appl Mater Interfaces; 2018 Mar 21; 10(11):9663-9668. PubMed ID: 29481035
    [Abstract] [Full Text] [Related]

  • 3. Realizing Long-Term Stability and Thickness Control of Black Phosphorus by Ambient Thermal Treatment.
    Jeong MH, Kwak DH, Ra HS, Lee AY, Lee JS.
    ACS Appl Mater Interfaces; 2018 Jun 06; 10(22):19069-19075. PubMed ID: 29771108
    [Abstract] [Full Text] [Related]

  • 4. Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers.
    Ra HS, Lee AY, Kwak DH, Jeong MH, Lee JS.
    ACS Appl Mater Interfaces; 2018 Jan 10; 10(1):925-932. PubMed ID: 29256593
    [Abstract] [Full Text] [Related]

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  • 6. Enhanced stability of black phosphorus field-effect transistors with SiO₂ passivation.
    Wan B, Yang B, Wang Y, Zhang J, Zeng Z, Liu Z, Wang W.
    Nanotechnology; 2015 Oct 30; 26(43):435702. PubMed ID: 26436439
    [Abstract] [Full Text] [Related]

  • 7. Passivated ambipolar black phosphorus transistors.
    Yue D, Lee D, Jang YD, Choi MS, Nam HJ, Jung DY, Yoo WJ.
    Nanoscale; 2016 Jul 07; 8(25):12773-9. PubMed ID: 27283027
    [Abstract] [Full Text] [Related]

  • 8. Oxidation Effect in Octahedral Hafnium Disulfide Thin Film.
    Chae SH, Jin Y, Kim TS, Chung DS, Na H, Nam H, Kim H, Perello DJ, Jeong HY, Ly TH, Lee YH.
    ACS Nano; 2016 Jan 26; 10(1):1309-16. PubMed ID: 26735305
    [Abstract] [Full Text] [Related]

  • 9. Thermoelectric terahertz photodetectors based on selenium-doped black phosphorus flakes.
    Viti L, Politano A, Zhang K, Vitiello MS.
    Nanoscale; 2019 Jan 23; 11(4):1995-2002. PubMed ID: 30644954
    [Abstract] [Full Text] [Related]

  • 10. HfO2-passivated black phosphorus field effect transistor with long-termed stability and enhanced current on/off ratio.
    Xing B, Guan L, Yu Y, Niu X, Yan X, Zhang S, Yao J, Wang D, Sha J, Wang Y.
    Nanotechnology; 2019 Aug 23; 30(34):345208. PubMed ID: 31067522
    [Abstract] [Full Text] [Related]

  • 11. Metal-Ion-Modified Black Phosphorus with Enhanced Stability and Transistor Performance.
    Guo Z, Chen S, Wang Z, Yang Z, Liu F, Xu Y, Wang J, Yi Y, Zhang H, Liao L, Chu PK, Yu XF.
    Adv Mater; 2017 Nov 23; 29(42):. PubMed ID: 28960515
    [Abstract] [Full Text] [Related]

  • 12. High Electron Mobility of Amorphous Red Phosphorus Thin Films.
    Amaral PEM, Nieman GP, Schwenk GR, Jing H, Zhang R, Cerkez EB, Strongin D, Ji HF.
    Angew Chem Int Ed Engl; 2019 May 13; 58(20):6766-6771. PubMed ID: 30920140
    [Abstract] [Full Text] [Related]

  • 13. Enhanced Performance of Field-Effect Transistors Based on Black Phosphorus Channels Reduced by Galvanic Corrosion of Al Overlayers.
    Lee S, Yoon C, Lee JH, Kim YS, Lee MJ, Kim W, Baik J, Jia Q, Park BH.
    ACS Appl Mater Interfaces; 2018 Jun 06; 10(22):18895-18901. PubMed ID: 29767500
    [Abstract] [Full Text] [Related]

  • 14. Thin-Film Deposition of Surface Passivated Black Phosphorus.
    Izquierdo N, Myers JC, Seaton NCA, Pandey SK, Campbell SA.
    ACS Nano; 2019 Jun 25; 13(6):7091-7099. PubMed ID: 31145589
    [Abstract] [Full Text] [Related]

  • 15. In Situ Cleaning and Fluorination of Black Phosphorus for Enhanced Performance of Transistors with High Stability.
    Hsieh YL, Su WH, Huang CC, Su CY.
    ACS Appl Mater Interfaces; 2020 Aug 19; 12(33):37375-37383. PubMed ID: 32700524
    [Abstract] [Full Text] [Related]

  • 16. Hybrid Black Phosphorus/Zero-Dimensional Quantum Dot Phototransistors: Tunable Photodoping and Enhanced Photoresponsivity.
    Lee AY, Ra HS, Kwak DH, Jeong MH, Park JH, Kang YS, Chae WS, Lee JS.
    ACS Appl Mater Interfaces; 2018 May 09; 10(18):16033-16040. PubMed ID: 29649868
    [Abstract] [Full Text] [Related]

  • 17. Solution-Based Property Tuning of Black Phosphorus.
    Fan S, Shen W, Liu J, Hei H, Hu R, Hu C, Zhang D, Hu X, Sun D, Chen JH, Ji W, Liu J.
    ACS Appl Mater Interfaces; 2018 Nov 21; 10(46):39890-39897. PubMed ID: 30398833
    [Abstract] [Full Text] [Related]

  • 18. Black Phosphorus Field-Effect Transistors with Work Function Tunable Contacts.
    Ma Y, Shen C, Zhang A, Chen L, Liu Y, Chen J, Liu Q, Li Z, Amer MR, Nilges T, Abbas AN, Zhou C.
    ACS Nano; 2017 Jul 25; 11(7):7126-7133. PubMed ID: 28653827
    [Abstract] [Full Text] [Related]

  • 19. Interface engineering for a stable chemical structure of oxidized-black phosphorus via self-reduction in AlOx atomic layer deposition.
    Kim DK, Chae J, Hong SB, Park H, Jeong KS, Park HW, Kwon SR, Chung KB, Cho MH.
    Nanoscale; 2018 Dec 13; 10(48):22896-22907. PubMed ID: 30488924
    [Abstract] [Full Text] [Related]

  • 20. Defect Engineering in Thickness-Controlled Bi2O2Se-Based Transistors by Argon Plasma Treatment.
    Gao M, Wei W, Han T, Li B, Zeng Z, Luo L, Zhu C.
    ACS Appl Mater Interfaces; 2022 Apr 06; 14(13):15370-15380. PubMed ID: 35319194
    [Abstract] [Full Text] [Related]

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