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1411 related items for PubMed ID: 26479493
1. Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges. Duan X, Wang C, Pan A, Yu R, Duan X. Chem Soc Rev; 2015 Dec 21; 44(24):8859-76. PubMed ID: 26479493 [Abstract] [Full Text] [Related]
2. Transition metal dichalcogenides and beyond: synthesis, properties, and applications of single- and few-layer nanosheets. Lv R, Robinson JA, Schaak RE, Sun D, Sun Y, Mallouk TE, Terrones M. Acc Chem Res; 2015 Jan 20; 48(1):56-64. PubMed ID: 25490673 [Abstract] [Full Text] [Related]
3. Flexible Molybdenum Disulfide (MoS2) Atomic Layers for Wearable Electronics and Optoelectronics. Singh E, Singh P, Kim KS, Yeom GY, Nalwa HS. ACS Appl Mater Interfaces; 2019 Mar 27; 11(12):11061-11105. PubMed ID: 30830744 [Abstract] [Full Text] [Related]
4. Single-layer MoS2 electronics. Lembke D, Bertolazzi S, Kis A. Acc Chem Res; 2015 Jan 20; 48(1):100-10. PubMed ID: 25555202 [Abstract] [Full Text] [Related]
5. Electronic structure and optical signatures of semiconducting transition metal dichalcogenide nanosheets. Zhao W, Ribeiro RM, Eda G. Acc Chem Res; 2015 Jan 20; 48(1):91-9. PubMed ID: 25515381 [Abstract] [Full Text] [Related]
6. Transition metal chalcogenides: ultrathin inorganic materials with tunable electronic properties. Heine T. Acc Chem Res; 2015 Jan 20; 48(1):65-72. PubMed ID: 25489917 [Abstract] [Full Text] [Related]
7. Enhanced light-matter interaction in two-dimensional transition metal dichalcogenides. Huang L, Krasnok A, Alú A, Yu Y, Neshev D, Miroshnichenko AE. Rep Prog Phys; 2022 Mar 08; 85(4):. PubMed ID: 34939940 [Abstract] [Full Text] [Related]
8. Electroluminescent Devices Based on 2D Semiconducting Transition Metal Dichalcogenides. Wang J, Verzhbitskiy I, Eda G. Adv Mater; 2018 Nov 08; 30(47):e1802687. PubMed ID: 30118543 [Abstract] [Full Text] [Related]
9. An optical spectroscopic study on two-dimensional group-VI transition metal dichalcogenides. Zeng H, Cui X. Chem Soc Rev; 2015 May 07; 44(9):2629-42. PubMed ID: 25897845 [Abstract] [Full Text] [Related]
10. Atomically thin arsenene and antimonene: semimetal-semiconductor and indirect-direct band-gap transitions. Zhang S, Yan Z, Li Y, Chen Z, Zeng H. Angew Chem Int Ed Engl; 2015 Mar 02; 54(10):3112-5. PubMed ID: 25564773 [Abstract] [Full Text] [Related]
11. HfSe2 thin films: 2D transition metal dichalcogenides grown by molecular beam epitaxy. Yue R, Barton AT, Zhu H, Azcatl A, Pena LF, Wang J, Peng X, Lu N, Cheng L, Addou R, McDonnell S, Colombo L, Hsu JW, Kim J, Kim MJ, Wallace RM, Hinkle CL. ACS Nano; 2015 Jan 27; 9(1):474-80. PubMed ID: 25496648 [Abstract] [Full Text] [Related]
12. Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors. Roy T, Tosun M, Cao X, Fang H, Lien DH, Zhao P, Chen YZ, Chueh YL, Guo J, Javey A. ACS Nano; 2015 Feb 24; 9(2):2071-9. PubMed ID: 25598307 [Abstract] [Full Text] [Related]
13. Semiconducting van der Waals Interfaces as Artificial Semiconductors. Ponomarev E, Ubrig N, Gutiérrez-Lezama I, Berger H, Morpurgo AF. Nano Lett; 2018 Aug 08; 18(8):5146-5152. PubMed ID: 30001136 [Abstract] [Full Text] [Related]
14. Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors. Wang Y, Kim JC, Wu RJ, Martinez J, Song X, Yang J, Zhao F, Mkhoyan A, Jeong HY, Chhowalla M. Nature; 2019 Apr 08; 568(7750):70-74. PubMed ID: 30918403 [Abstract] [Full Text] [Related]
15. Freestanding van der Waals heterostructures of graphene and transition metal dichalcogenides. Azizi A, Eichfeld S, Geschwind G, Zhang K, Jiang B, Mukherjee D, Hossain L, Piasecki AF, Kabius B, Robinson JA, Alem N. ACS Nano; 2015 May 26; 9(5):4882-90. PubMed ID: 25885122 [Abstract] [Full Text] [Related]
16. Scalable Production of a Few-Layer MoS2/WS2 Vertical Heterojunction Array and Its Application for Photodetectors. Xue Y, Zhang Y, Liu Y, Liu H, Song J, Sophia J, Liu J, Xu Z, Xu Q, Wang Z, Zheng J, Liu Y, Li S, Bao Q. ACS Nano; 2016 Jan 26; 10(1):573-80. PubMed ID: 26647019 [Abstract] [Full Text] [Related]
17. Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides. Liu GB, Xiao D, Yao Y, Xu X, Yao W. Chem Soc Rev; 2015 May 07; 44(9):2643-63. PubMed ID: 25474725 [Abstract] [Full Text] [Related]
18. Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects. Schmidt H, Giustiniano F, Eda G. Chem Soc Rev; 2015 Nov 07; 44(21):7715-36. PubMed ID: 26088725 [Abstract] [Full Text] [Related]
19. Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material. Zhang X, Qiao XF, Shi W, Wu JB, Jiang DS, Tan PH. Chem Soc Rev; 2015 May 07; 44(9):2757-85. PubMed ID: 25679474 [Abstract] [Full Text] [Related]
20. Broadband Photovoltaic Detectors Based on an Atomically Thin Heterostructure. Long M, Liu E, Wang P, Gao A, Xia H, Luo W, Wang B, Zeng J, Fu Y, Xu K, Zhou W, Lv Y, Yao S, Lu M, Chen Y, Ni Z, You Y, Zhang X, Qin S, Shi Y, Hu W, Xing D, Miao F. Nano Lett; 2016 Apr 13; 16(4):2254-9. PubMed ID: 26886761 [Abstract] [Full Text] [Related] Page: [Next] [New Search]