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Journal Abstract Search

124 related items for PubMed ID: 26735305

  • 1. Oxidation Effect in Octahedral Hafnium Disulfide Thin Film.
    Chae SH, Jin Y, Kim TS, Chung DS, Na H, Nam H, Kim H, Perello DJ, Jeong HY, Ly TH, Lee YH.
    ACS Nano; 2016 Jan 26; 10(1):1309-16. PubMed ID: 26735305
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  • 2. HfO2/HfS2 hybrid heterostructure fabricated via controllable chemical conversion of two-dimensional HfS2.
    Lai S, Byeon S, Jang SK, Lee J, Lee BH, Park JH, Kim YH, Lee S.
    Nanoscale; 2018 Oct 21; 10(39):18758-18766. PubMed ID: 30276384
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  • 3. Substrate engineering by hexagonal boron nitride/SiO2 for hysteresis-free graphene FETs and large-scale graphene p-n junctions.
    Xu H, Wu J, Chen Y, Zhang H, Zhang J.
    Chem Asian J; 2013 Oct 21; 8(10):2446-52. PubMed ID: 23840025
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  • 5. High-Performance Black Phosphorus Field-Effect Transistors with Long-Term Air Stability.
    He D, Wang Y, Huang Y, Shi Y, Wang X, Duan X.
    Nano Lett; 2019 Jan 09; 19(1):331-337. PubMed ID: 30511871
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  • 6. Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride.
    Wang D, Lu Y, Meng J, Zhang X, Yin Z, Gao M, Wang Y, Cheng L, You J, Zhang J.
    Nanoscale; 2019 May 16; 11(19):9310-9318. PubMed ID: 31066419
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  • 7. Plasma-Treated Thickness-Controlled Two-Dimensional Black Phosphorus and Its Electronic Transport Properties.
    Jia J, Jang SK, Lai S, Xu J, Choi YJ, Park JH, Lee S.
    ACS Nano; 2015 Sep 22; 9(9):8729-36. PubMed ID: 26301840
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  • 8. Impact of Metal Contacts on the Performance of Multilayer HfS2 Field-Effect Transistors.
    Nie XR, Sun BQ, Zhu H, Zhang M, Zhao DH, Chen L, Sun QQ, Zhang DW.
    ACS Appl Mater Interfaces; 2017 Aug 16; 9(32):26996-27003. PubMed ID: 28730801
    [Abstract] [Full Text] [Related]

  • 9. High-performance printed carbon nanotube thin-film transistors array fabricated by a nonlithography technique using hafnium oxide passivation layer and mask.
    Pillai SK, Chan-Park MB.
    ACS Appl Mater Interfaces; 2012 Dec 16; 4(12):7047-54. PubMed ID: 23194001
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  • 10. Sulfur-Doped Black Phosphorus Field-Effect Transistors with Enhanced Stability.
    Lv W, Yang B, Wang B, Wan W, Ge Y, Yang R, Hao C, Xiang J, Zhang B, Zeng Z, Liu Z.
    ACS Appl Mater Interfaces; 2018 Mar 21; 10(11):9663-9668. PubMed ID: 29481035
    [Abstract] [Full Text] [Related]

  • 11. Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures.
    Lee GH, Yu YJ, Cui X, Petrone N, Lee CH, Choi MS, Lee DY, Lee C, Yoo WJ, Watanabe K, Taniguchi T, Nuckolls C, Kim P, Hone J.
    ACS Nano; 2013 Sep 24; 7(9):7931-6. PubMed ID: 23924287
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  • 17. Surface chemistry of black phosphorus under a controlled oxidative environment.
    Luo W, Zemlyanov DY, Milligan CA, Du Y, Yang L, Wu Y, Ye PD.
    Nanotechnology; 2016 Oct 28; 27(43):434002. PubMed ID: 27658938
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  • 18. Tunable phonon polaritons in atomically thin van der Waals crystals of boron nitride.
    Dai S, Fei Z, Ma Q, Rodin AS, Wagner M, McLeod AS, Liu MK, Gannett W, Regan W, Watanabe K, Taniguchi T, Thiemens M, Dominguez G, Castro Neto AH, Zettl A, Keilmann F, Jarillo-Herrero P, Fogler MM, Basov DN.
    Science; 2014 Mar 07; 343(6175):1125-9. PubMed ID: 24604197
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