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Journal Abstract Search

124 related items for PubMed ID: 26735305

  • 21. Ultraclean and large-area monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition.
    Wen Y, Shang X, Dong J, Xu K, He J, Jiang C.
    Nanotechnology; 2015 Jul 10; 26(27):275601. PubMed ID: 26082164
    [Abstract] [Full Text] [Related]

  • 22. High-Mobility InSe Transistors: The Role of Surface Oxides.
    Ho PH, Chang YR, Chu YC, Li MK, Tsai CA, Wang WH, Ho CH, Chen CW, Chiu PW.
    ACS Nano; 2017 Jul 25; 11(7):7362-7370. PubMed ID: 28661128
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  • 23. Growth of large-scale and thickness-modulated MoS₂ nanosheets.
    Choudhary N, Park J, Hwang JY, Choi W.
    ACS Appl Mater Interfaces; 2014 Dec 10; 6(23):21215-22. PubMed ID: 25382854
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  • 24. High-Performance p-Type Black Phosphorus Transistor with Scandium Contact.
    Li L, Engel M, Farmer DB, Han SJ, Wong HS.
    ACS Nano; 2016 Apr 26; 10(4):4672-7. PubMed ID: 27023751
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  • 25. Strong oxidation resistance of atomically thin boron nitride nanosheets.
    Li LH, Cervenka J, Watanabe K, Taniguchi T, Chen Y.
    ACS Nano; 2014 Feb 25; 8(2):1457-62. PubMed ID: 24400990
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  • 26. Surface Passivation of Layered MoSe2 via van der Waals Stacking of Amorphous Hydrocarbon.
    Lee DH, Dongquoc V, Hong S, Kim SI, Kim E, Cho SY, Oh CH, Je Y, Kwon MJ, Hoang Vo A, Seo DB, Lee JH, Kim S, Kim ET, Park JH.
    Small; 2022 Oct 25; 18(40):e2202912. PubMed ID: 36058645
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  • 27. Growth and spectroscopic characterization of monolayer and few-layer hexagonal boron nitride on metal substrates.
    Feigelson BN, Bermudez VM, Hite JK, Robinson ZR, Wheeler VD, Sridhara K, Hernández SC.
    Nanoscale; 2015 Feb 28; 7(8):3694-702. PubMed ID: 25640166
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  • 28. Evolution of interlayer coupling in twisted molybdenum disulfide bilayers.
    Liu K, Zhang L, Cao T, Jin C, Qiu D, Zhou Q, Zettl A, Yang P, Louie SG, Wang F.
    Nat Commun; 2014 Sep 18; 5():4966. PubMed ID: 25233054
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  • 29. Enhanced stability of black phosphorus field-effect transistors with SiO₂ passivation.
    Wan B, Yang B, Wang Y, Zhang J, Zeng Z, Liu Z, Wang W.
    Nanotechnology; 2015 Oct 30; 26(43):435702. PubMed ID: 26436439
    [Abstract] [Full Text] [Related]

  • 30. Tin disulfide-an emerging layered metal dichalcogenide semiconductor: materials properties and device characteristics.
    Huang Y, Sutter E, Sadowski JT, Cotlet M, Monti OL, Racke DA, Neupane MR, Wickramaratne D, Lake RK, Parkinson BA, Sutter P.
    ACS Nano; 2014 Oct 28; 8(10):10743-55. PubMed ID: 25247490
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  • 31. Outstanding stretchability and thickness-dependent mechanical properties of 2D HfS2, HfSe2, and hafnium oxide.
    Jahn YM, Ya'akobovitz A.
    Nanoscale; 2021 Nov 18; 13(44):18458-18466. PubMed ID: 34608919
    [Abstract] [Full Text] [Related]

  • 32. Photoluminescence quenching and charge transfer in artificial heterostacks of monolayer transition metal dichalcogenides and few-layer black phosphorus.
    Yuan J, Najmaei S, Zhang Z, Zhang J, Lei S, M Ajayan P, Yakobson BI, Lou J.
    ACS Nano; 2015 Jan 27; 9(1):555-63. PubMed ID: 25569715
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  • 33. The impact of hexagonal boron nitride encapsulation on the structural and vibrational properties of few layer black phosphorus.
    Birowska M, Urban J, Baranowski M, Maude DK, Plochocka P, Szwacki NG.
    Nanotechnology; 2019 May 10; 30(19):195201. PubMed ID: 30699401
    [Abstract] [Full Text] [Related]

  • 34. Hysteresis in single-layer MoS2 field effect transistors.
    Late DJ, Liu B, Matte HS, Dravid VP, Rao CN.
    ACS Nano; 2012 Jun 26; 6(6):5635-41. PubMed ID: 22577885
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  • 35. Flexible, low-voltage, and low-hysteresis PbSe nanowire field-effect transistors.
    Kim DK, Lai Y, Vemulkar TR, Kagan CR.
    ACS Nano; 2011 Dec 27; 5(12):10074-83. PubMed ID: 22084980
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  • 36. Oxygen environmental and passivation effects on molybdenum disulfide field effect transistors.
    Park W, Park J, Jang J, Lee H, Jeong H, Cho K, Hong S, Lee T.
    Nanotechnology; 2013 Mar 08; 24(9):095202. PubMed ID: 23403849
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  • 37. In situ repair of high-performance, flexible nanocrystal electronics for large-area fabrication and operation in air.
    Choi JH, Oh SJ, Lai Y, Kim DK, Zhao T, Fafarman AT, Diroll BT, Murray CB, Kagan CR.
    ACS Nano; 2013 Sep 24; 7(9):8275-83. PubMed ID: 23952742
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  • 38. Transition metal chalcogenides: ultrathin inorganic materials with tunable electronic properties.
    Heine T.
    Acc Chem Res; 2015 Jan 20; 48(1):65-72. PubMed ID: 25489917
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  • 39. Carbon nanotube thin film transistors based on aerosol methods.
    Zavodchikova MY, Kulmala T, Nasibulin AG, Ermolov V, Franssila S, Grigoras K, Kauppinen EI.
    Nanotechnology; 2009 Feb 25; 20(8):085201. PubMed ID: 19417441
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  • 40. Wetting of mono and few-layered WS2 and MoS2 films supported on Si/SiO2 substrates.
    Chow PK, Singh E, Viana BC, Gao J, Luo J, Li J, Lin Z, Elías AL, Shi Y, Wang Z, Terrones M, Koratkar N.
    ACS Nano; 2015 Mar 24; 9(3):3023-31. PubMed ID: 25752871
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