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Journal Abstract Search

274 related items for PubMed ID: 26822408

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  • 3. A Novel Growth Method To Improve the Quality of GaAs Nanowires Grown by Ga-Assisted Chemical Beam Epitaxy.
    García Núñez C, Braña AF, López N, García BJ.
    Nano Lett; 2018 Jun 13; 18(6):3608-3615. PubMed ID: 29739187
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  • 5. Ga crystallization dynamics during annealing of self-assisted GaAs nanowires.
    Scarpellini D, Fedorov A, Somaschini C, Frigeri C, Bollani M, Bietti S, Nöetzel R, Sanguinetti S.
    Nanotechnology; 2017 Jan 27; 28(4):045605. PubMed ID: 27997367
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  • 6. Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B.
    Davydok A, Rieger T, Biermanns A, Saqib M, Grap T, Lepsa MI, Pietsch U.
    J Appl Crystallogr; 2013 Aug 01; 46(Pt 4):893-897. PubMed ID: 24046494
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  • 8. Mechanism of self-assembled growth of ordered GaAs nanowire arrays by metalorganic vapor phase epitaxy on GaAs vicinal substrates.
    Mohan P, Bag R, Singh S, Kumar A, Tyagi R.
    Nanotechnology; 2012 Jan 20; 23(2):025601. PubMed ID: 22166369
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  • 9. Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs(1-x)Bi(x) films.
    Wood AW, Collar K, Li J, Brown AS, Babcock SE.
    Nanotechnology; 2016 Mar 18; 27(11):115704. PubMed ID: 26876494
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  • 10. Composition and optical properties of (In, Ga)As nanowires grown by group-III-assisted molecular beam epitaxy.
    Ruiz MG, Castro A, Herranz J, da Silva A, John P, Trampert A, Brandt O, Geelhaar L, Lähnemann J.
    Nanotechnology; 2024 Apr 09; 35(26):. PubMed ID: 38527360
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  • 11. Two-step fabrication of self-catalyzed Ga-based semiconductor nanowires on Si by molecular-beam epitaxy.
    Yu X, Li L, Wang H, Xiao J, Shen C, Pan D, Zhao J.
    Nanoscale; 2016 May 19; 8(20):10615-21. PubMed ID: 27194599
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  • 12. All zinc-blende GaAs/(Ga,Mn)As core-shell nanowires with ferromagnetic ordering.
    Yu X, Wang H, Pan D, Zhao J, Misuraca J, von Molnár S, Xiong P.
    Nano Lett; 2013 Apr 10; 13(4):1572-7. PubMed ID: 23517546
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  • 13. Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon.
    Matteini F, Dubrovskii VG, Rüffer D, Tütüncüoğlu G, Fontana Y, Morral AF.
    Nanotechnology; 2015 Mar 13; 26(10):105603. PubMed ID: 25687793
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  • 14. Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy.
    Tchernycheva M, Harmand JC, Patriarche G, Travers L, Cirlin GE.
    Nanotechnology; 2006 Aug 28; 17(16):4025-30. PubMed ID: 21727532
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  • 15. Model of patterned self-assisted nanowire growth.
    Gibson SJ, LaPierre RR.
    Nanotechnology; 2014 Oct 17; 25(41):415304. PubMed ID: 25258192
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  • 16. High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga.
    Russo-Averchi E, Vukajlovic Plestina J, Tütüncüoglu G, Matteini F, Dalmau-Mallorquí A, de la Mata M, Rüffer D, Potts HA, Arbiol J, Conesa-Boj S, Fontcuberta i Morral A.
    Nano Lett; 2015 May 13; 15(5):2869-74. PubMed ID: 25894762
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  • 17. High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning.
    Plissard S, Larrieu G, Wallart X, Caroff P.
    Nanotechnology; 2011 Jul 08; 22(27):275602. PubMed ID: 21597162
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  • 18. Evidence for structural phase transitions induced by the triple phase line shift in self-catalyzed GaAs nanowires.
    Yu X, Wang H, Lu J, Zhao J, Misuraca J, Xiong P, von Molnár S.
    Nano Lett; 2012 Oct 10; 12(10):5436-42. PubMed ID: 22984828
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  • 19. Conditions for high yield of selective-area epitaxy InAs nanowires on SiO x /Si(111) substrates.
    Robson MT, Dubrovskii VG, LaPierre RR.
    Nanotechnology; 2015 Nov 20; 26(46):465301. PubMed ID: 26508403
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  • 20. Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy.
    Lancaster S, Groiss H, Zederbauer T, Andrews AM, MacFarland D, Schrenk W, Strasser G, Detz H.
    Nanotechnology; 2019 Feb 08; 30(6):065602. PubMed ID: 30523852
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