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Journal Abstract Search

141 related items for PubMed ID: 26893188

  • 1. Synthesis and transistor application of the extremely extended phenacene molecule, [9]phenacene.
    Shimo Y, Mikami T, Hamao S, Goto H, Okamoto H, Eguchi R, Gohda S, Hayashi Y, Kubozono Y.
    Sci Rep; 2016 Feb 19; 6():21008. PubMed ID: 26893188
    [Abstract] [Full Text] [Related]

  • 2. An extended phenacene-type molecule, [8]phenacene: synthesis and transistor application.
    Okamoto H, Eguchi R, Hamao S, Goto H, Gotoh K, Sakai Y, Izumi M, Takaguchi Y, Gohda S, Kubozono Y.
    Sci Rep; 2014 Jun 17; 4():5330. PubMed ID: 24936854
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  • 3. Synthesis of the extended phenacene molecules, [10]phenacene and [11]phenacene, and their performance in a field-effect transistor.
    Okamoto H, Hamao S, Eguchi R, Goto H, Takabayashi Y, Yen PY, Liang LU, Chou CW, Hoffmann G, Gohda S, Sugino H, Liao YF, Ishii H, Kubozono Y.
    Sci Rep; 2019 Mar 08; 9(1):4009. PubMed ID: 30850618
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  • 6. Fabrication of ring oscillators using organic molecules of phenacene and perylenedicarboximide.
    Fioravanti N, Pierantoni L, Mencarelli D, Turchetti C, Hamao S, Okamoto H, Goto H, Eguchi R, Fujiwara A, Kubozono Y.
    RSC Adv; 2021 Feb 10; 11(13):7538-7551. PubMed ID: 35423277
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  • 9. Short Synthesis of [5]- and [7]Phenacenes with Silyl Groups at the Axis Positions.
    Roy D, Maekawa H, Murai M, Takai K.
    Chem Asian J; 2015 Nov 10; 10(11):2518-24. PubMed ID: 26222669
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  • 11. Thieno[3,4-b]thiophene-Based Novel Small-Molecule Optoelectronic Materials.
    Zhang C, Zhu X.
    Acc Chem Res; 2017 Jun 20; 50(6):1342-1350. PubMed ID: 28375613
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  • 12. Dianthra[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DATT): synthesis, characterization, and FET characteristics of new π-extended heteroarene with eight fused aromatic rings.
    Niimi K, Shinamura S, Osaka I, Miyazaki E, Takimiya K.
    J Am Chem Soc; 2011 Jun 08; 133(22):8732-9. PubMed ID: 21528919
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  • 15. A high-performance organic field-effect transistor based on platinum(II) porphyrin: peripheral substituents on porphyrin ligand significantly affect film structure and charge mobility.
    Che CM, Xiang HF, Chui SS, Xu ZX, Roy VA, Yan JJ, Fu WF, Lai PT, Williams ID.
    Chem Asian J; 2008 Jul 07; 3(7):1092-103. PubMed ID: 18528916
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  • 19. High-Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions.
    Liu B, Ma Y, Zhang A, Chen L, Abbas AN, Liu Y, Shen C, Wan H, Zhou C.
    ACS Nano; 2016 May 24; 10(5):5153-60. PubMed ID: 27159780
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