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PUBMED FOR HANDHELDS

Journal Abstract Search


324 related items for PubMed ID: 27094822

  • 1.
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  • 2. Stages in the catalyst-free InP nanowire growth on silicon (100) by metal organic chemical vapor deposition.
    Miao G, Zhang D.
    Nanoscale Res Lett; 2012 Jun 20; 7(1):321. PubMed ID: 22716780
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  • 5. Self-catalyzed Growth of InAs Nanowires on InP Substrate.
    Li B, Yan X, Zhang X, Ren X.
    Nanoscale Res Lett; 2017 Dec 20; 12(1):34. PubMed ID: 28091946
    [Abstract] [Full Text] [Related]

  • 6. Seeding layer assisted selective-area growth of As-rich InAsP nanowires on InP substrates.
    Ren D, Farrell AC, Williams BS, Huffaker DL.
    Nanoscale; 2017 Jun 22; 9(24):8220-8228. PubMed ID: 28580981
    [Abstract] [Full Text] [Related]

  • 7. Growth and luminescence of ternary semiconductor ZnCdSe nanowires by metalorganic chemical vapor deposition.
    Zhang XT, Liu Z, Li Q, Hark SK.
    J Phys Chem B; 2005 Sep 29; 109(38):17913-6. PubMed ID: 16853298
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  • 8. Growth of InAs/InP core-shell nanowires with various pure crystal structures.
    Gorji Ghalamestani S, Heurlin M, Wernersson LE, Lehmann S, Dick KA.
    Nanotechnology; 2012 Jul 20; 23(28):285601. PubMed ID: 22717421
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  • 9. Unit cell parameters of wurtzite InP nanowires determined by x-ray diffraction.
    Kriegner D, Wintersberger E, Kawaguchi K, Wallentin J, Borgström MT, Stangl J.
    Nanotechnology; 2011 Oct 21; 22(42):425704. PubMed ID: 21937785
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  • 10. Crystal-structure-dependent photoluminescence from InP nanowires.
    Mattila M, Hakkarainen T, Mulot M, Lipsanen H.
    Nanotechnology; 2006 Mar 28; 17(6):1580-3. PubMed ID: 26558562
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  • 11. High quality GaAs nanowires grown on glass substrates.
    Dhaka V, Haggren T, Jussila H, Jiang H, Kauppinen E, Huhtio T, Sopanen M, Lipsanen H.
    Nano Lett; 2012 Apr 11; 12(4):1912-8. PubMed ID: 22432446
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  • 12. The effect of V/III ratio and catalyst particle size on the crystal structure and optical properties of InP nanowires.
    Paiman S, Gao Q, Tan HH, Jagadish C, Pemasiri K, Montazeri M, Jackson HE, Smith LM, Yarrison-Rice JM, Zhang X, Zou J.
    Nanotechnology; 2009 Jun 03; 20(22):225606. PubMed ID: 19436086
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  • 13. Micro-Raman Spectroscopy in Self-Catalyzed Indium Phosphide Nanostructures: Morphology and Substrate Effects.
    Park JH, Kim RS, Pozuelo M, Chung CH.
    J Nanosci Nanotechnol; 2019 Apr 01; 19(4):2285-2290. PubMed ID: 30486983
    [Abstract] [Full Text] [Related]

  • 14. Different growth regimes in InP nanowire growth mediated by Ag nanoparticles.
    Oliveira DS, Zavarize M, Tizei LHG, Walls M, Ospina CA, Iikawa F, Ugarte D, Cotta MA.
    Nanotechnology; 2017 Dec 15; 28(50):505604. PubMed ID: 29099391
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  • 15. Defect-free <110> zinc-blende structured InAs nanowires catalyzed by palladium.
    Xu H, Wang Y, Guo Y, Liao Z, Gao Q, Tan HH, Jagadish C, Zou J.
    Nano Lett; 2012 Nov 14; 12(11):5744-9. PubMed ID: 23030768
    [Abstract] [Full Text] [Related]

  • 16. Heteroepitaxial growth of vertical GaAs nanowires on Si(111) substrates by metal-organic chemical vapor deposition.
    Bao XY, Soci C, Susac D, Bratvold J, Aplin DP, Wei W, Chen CY, Dayeh SA, Kavanagh KL, Wang D.
    Nano Lett; 2008 Nov 14; 8(11):3755-60. PubMed ID: 18954121
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  • 17. Nondestructive Characterizations of Au-Catalyzed GaAs Nanowires on GaAs(111)B Substrates via Identifications of 1st Order Optical Phonon Modes Using μ-Raman Spectroscopy.
    Park JH, Kim RS, Park SJ, Park GC, Chung CH.
    J Nanosci Nanotechnol; 2020 Jul 01; 20(7):4358-4363. PubMed ID: 31968474
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  • 18. Self-catalyzed epitaxial growth of vertical indium phosphide nanowires on silicon.
    Gao L, Woo RL, Liang B, Pozuelo M, Prikhodko S, Jackson M, Goel N, Hudait MK, Huffaker DL, Goorsky MS, Kodambaka S, Hicks RF.
    Nano Lett; 2009 Jun 01; 9(6):2223-8. PubMed ID: 19413340
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  • 19. Formation of wurtzite InP nanowires explained by liquid-ordering.
    Algra RE, Vonk V, Wermeille D, Szweryn WJ, Verheijen MA, van Enckevort WJ, Bode AA, Noorduin WL, Tancini E, de Jong AE, Bakkers EP, Vlieg E.
    Nano Lett; 2011 Jan 12; 11(1):44-8. PubMed ID: 21171613
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  • 20. Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature.
    Zhang G, Takiguchi M, Tateno K, Tawara T, Notomi M, Gotoh H.
    Sci Adv; 2019 Feb 12; 5(2):eaat8896. PubMed ID: 30801006
    [Abstract] [Full Text] [Related]


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