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Journal Abstract Search

205 related items for PubMed ID: 27121951

  • 21. Polymer-Assisted Deposition of Gallium Oxide for Thin-Film Transistor Applications.
    Chen L, Xu W, Liu W, Han S, Cao P, Fang M, Zhu D, Lu Y.
    ACS Appl Mater Interfaces; 2019 Aug 14; 11(32):29078-29085. PubMed ID: 31334628
    [Abstract] [Full Text] [Related]

  • 22. Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition.
    Sheng J, Lee HJ, Oh S, Park JS.
    ACS Appl Mater Interfaces; 2016 Dec 14; 8(49):33821-33828. PubMed ID: 27960372
    [Abstract] [Full Text] [Related]

  • 23. Effect of annealing temperature and capping ligands on the electron mobility and electronic structure of indium oxide nanocrystal thin films: a comparative study with oleic acid, benzoic acid, and 4-aminobenzoic acid.
    Le QT, Yun H, Park H, Jeong HD.
    Phys Chem Chem Phys; 2023 Nov 22; 25(45):30975-30992. PubMed ID: 37937718
    [Abstract] [Full Text] [Related]

  • 24. Indium oxide thin-film transistors processed at low temperature via ultrasonic spray pyrolysis.
    Faber H, Lin YH, Thomas SR, Zhao K, Pliatsikas N, McLachlan MA, Amassian A, Patsalas PA, Anthopoulos TD.
    ACS Appl Mater Interfaces; 2015 Jan 14; 7(1):782-90. PubMed ID: 25490965
    [Abstract] [Full Text] [Related]

  • 25. Facile Routes To Improve Performance of Solution-Processed Amorphous Metal Oxide Thin Film Transistors by Water Vapor Annealing.
    Park WT, Son I, Park HW, Chung KB, Xu Y, Lee T, Noh YY.
    ACS Appl Mater Interfaces; 2015 Jun 24; 7(24):13289-94. PubMed ID: 26043206
    [Abstract] [Full Text] [Related]

  • 26. Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors.
    Jeong Y, Pearson C, Kim HG, Park MY, Kim H, Do LM, Petty MC.
    ACS Appl Mater Interfaces; 2016 Jan 27; 8(3):2061-70. PubMed ID: 26704352
    [Abstract] [Full Text] [Related]

  • 27. Solution-processed LiF-doped ZnO films for high performance low temperature field effect transistors and inverted solar cells.
    Chang J, Lin Z, Zhu C, Chi C, Zhang J, Wu J.
    ACS Appl Mater Interfaces; 2013 Jul 24; 5(14):6687-93. PubMed ID: 23773013
    [Abstract] [Full Text] [Related]

  • 28. Electronic Structure of Low-Temperature Solution-Processed Amorphous Metal Oxide Semiconductors for Thin-Film Transistor Applications.
    Socratous J, Banger KK, Vaynzof Y, Sadhanala A, Brown AD, Sepe A, Steiner U, Sirringhaus H.
    Adv Funct Mater; 2015 Mar 25; 25(12):1873-1885. PubMed ID: 26190964
    [Abstract] [Full Text] [Related]

  • 29. High performance solution-processed indium oxide thin-film transistors.
    Kim HS, Byrne PD, Facchetti A, Marks TJ.
    J Am Chem Soc; 2008 Sep 24; 130(38):12580-1. PubMed ID: 18759390
    [Abstract] [Full Text] [Related]

  • 30. Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors.
    Ma Q, Zheng HM, Shao Y, Zhu B, Liu WJ, Ding SJ, Zhang DW.
    Nanoscale Res Lett; 2018 Jan 09; 13(1):4. PubMed ID: 29318402
    [Abstract] [Full Text] [Related]

  • 31. Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture.
    Yu X, Zhou N, Smith J, Lin H, Stallings K, Yu J, Marks TJ, Facchetti A.
    ACS Appl Mater Interfaces; 2013 Aug 28; 5(16):7983-8. PubMed ID: 23876148
    [Abstract] [Full Text] [Related]

  • 32. Boosting carrier mobility and stability in indium-zinc-tin oxide thin-film transistors through controlled crystallization.
    On N, Kim BK, Kim Y, Kim EH, Lim JH, Hosono H, Kim J, Yang H, Jeong JK.
    Sci Rep; 2020 Nov 02; 10(1):18868. PubMed ID: 33139811
    [Abstract] [Full Text] [Related]

  • 33. Thermal effect of annealing-temperature on solution-processed high-k ZrO2 dielectrics.
    Zhou S, Zhang J, Fang Z, Ning H, Cai W, Zhu Z, Liang Z, Yao R, Guo D, Peng J.
    RSC Adv; 2019 Dec 18; 9(72):42415-42422. PubMed ID: 35542877
    [Abstract] [Full Text] [Related]

  • 34. Influence of Post-UV/Ozone Treatment of Ultrasonic-Sprayed Zirconium Oxide Dielectric Films for a Low-Temperature Oxide Thin Film Transistor.
    Oluwabi AT, Gaspar D, Katerski A, Mere A, Krunks M, Pereira L, Oja Acik I.
    Materials (Basel); 2019 Dec 18; 13(1):. PubMed ID: 31861357
    [Abstract] [Full Text] [Related]

  • 35. Ferroelectric/Dielectric Double Gate Insulator Spin-Coated Using Barium Titanate Nanocrystals for an Indium Oxide Nanocrystal-Based Thin-Film Transistor.
    Pham HT, Yang JH, Lee DS, Lee BH, Jeong HD.
    ACS Appl Mater Interfaces; 2016 Mar 23; 8(11):7248-56. PubMed ID: 26927618
    [Abstract] [Full Text] [Related]

  • 36. Accelerated formation of metal oxide thin film at 200 °C using oxygen supplied by a nitric acid additive and residual organic suction vacuum annealing for thin-film transistor applications.
    Jeong WH, Kim DL, Kim HJ.
    ACS Appl Mater Interfaces; 2013 Sep 25; 5(18):9051-6. PubMed ID: 23962037
    [Abstract] [Full Text] [Related]

  • 37. The tunable amorphous-crystalline transition temperature by indium-doping on GeTe thin films.
    Shang F, Zhai J, Wang C, Yao X.
    J Nanosci Nanotechnol; 2010 Nov 25; 10(11):7511-4. PubMed ID: 21137971
    [Abstract] [Full Text] [Related]

  • 38. High-κ Lanthanum Zirconium Oxide Thin Film Dielectrics from Aqueous Solution Precursors.
    Woods KN, Chiang TH, Plassmeyer PN, Kast MG, Lygo AC, Grealish AK, Boettcher SW, Page CJ.
    ACS Appl Mater Interfaces; 2017 Mar 29; 9(12):10897-10903. PubMed ID: 28262013
    [Abstract] [Full Text] [Related]

  • 39. Role of the electronically-active amorphous state in low-temperature processed In2O3 thin-film transistors.
    Kirmani AR, Roe EF, Stafford CM, Richter LJ.
    Mater Adv; 2020 Mar 29; 1(2):. PubMed ID: 38711924
    [Abstract] [Full Text] [Related]

  • 40. Charge Transport in Low-Temperature Processed Thin-Film Transistors Based on Indium Oxide/Zinc Oxide Heterostructures.
    Krausmann J, Sanctis S, Engstler J, Luysberg M, Bruns M, Schneider JJ.
    ACS Appl Mater Interfaces; 2018 Jun 20; 10(24):20661-20671. PubMed ID: 29888585
    [Abstract] [Full Text] [Related]

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