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PUBMED FOR HANDHELDS

Journal Abstract Search


327 related items for PubMed ID: 27152356

  • 1. Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy.
    Li X, Lin MW, Lin J, Huang B, Puretzky AA, Ma C, Wang K, Zhou W, Pantelides ST, Chi M, Kravchenko I, Fowlkes J, Rouleau CM, Geohegan DB, Xiao K.
    Sci Adv; 2016 Apr; 2(4):e1501882. PubMed ID: 27152356
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  • 2. Van der Waals Epitaxial Growth of Two-Dimensional Single-Crystalline GaSe Domains on Graphene.
    Li X, Basile L, Huang B, Ma C, Lee J, Vlassiouk IV, Puretzky AA, Lin MW, Yoon M, Chi M, Idrobo JC, Rouleau CM, Sumpter BG, Geohegan DB, Xiao K.
    ACS Nano; 2015 Aug 25; 9(8):8078-88. PubMed ID: 26202730
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  • 3. Arrayed van der Waals Vertical Heterostructures Based on 2D GaSe Grown by Molecular Beam Epitaxy.
    Yuan X, Tang L, Liu S, Wang P, Chen Z, Zhang C, Liu Y, Wang W, Zou Y, Liu C, Guo N, Zou J, Zhou P, Hu W, Xiu F.
    Nano Lett; 2015 May 13; 15(5):3571-7. PubMed ID: 25923041
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  • 9. Computational discovery of PtS2/GaSe van der Waals heterostructure for solar energy applications.
    Xiong R, Hu R, Zhang Y, Yang X, Lin P, Wen C, Sa B, Sun Z.
    Phys Chem Chem Phys; 2021 Sep 22; 23(36):20163-20173. PubMed ID: 34551041
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  • 10. Understanding Substrate-Guided Assembly in van der Waals Epitaxy by in Situ Laser Crystallization within a Transmission Electron Microscope.
    Liu C, Lin YC, Yoon M, Yu Y, Puretzky AA, Rouleau CM, Chisholm MF, Xiao K, Eres G, Duscher G, Geohegan DB.
    ACS Nano; 2021 May 25; 15(5):8638-8652. PubMed ID: 33929816
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  • 11. 2D layered BP/InSe and BP/Janus In2SeX (X = S or Te) type-II van der Waals heterostructures for photovoltaics: insight from first-principles calculations.
    Cheng K, Xu J, Guo X, Guo S, Su Y.
    Phys Chem Chem Phys; 2023 Jul 05; 25(26):17360-17369. PubMed ID: 37347175
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  • 12. Chemically synthesized heterostructures of two-dimensional molybdenum/tungsten-based dichalcogenides with vertically aligned layers.
    Jung Y, Shen J, Sun Y, Cha JJ.
    ACS Nano; 2014 Sep 23; 8(9):9550-7. PubMed ID: 25153809
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  • 14. Strain-Induced Electronic Structure Changes in Stacked van der Waals Heterostructures.
    He Y, Yang Y, Zhang Z, Gong Y, Zhou W, Hu Z, Ye G, Zhang X, Bianco E, Lei S, Jin Z, Zou X, Yang Y, Zhang Y, Xie E, Lou J, Yakobson B, Vajtai R, Li B, Ajayan P.
    Nano Lett; 2016 May 11; 16(5):3314-20. PubMed ID: 27120401
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  • 15. Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.
    Chen T, Ding D, Shi J, Wang G, Kou L, Zheng X, Ren X, Liu X, Jin C, Zhong J, Hao G.
    J Phys Chem Lett; 2019 Sep 05; 10(17):5027-5035. PubMed ID: 31357864
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  • 19. All-Solution-Processed Van der Waals Heterostructures for Wafer-Scale Electronics.
    Kim J, Rhee D, Song O, Kim M, Kwon YH, Lim DU, Kim IS, Mazánek V, Valdman L, Sofer Z, Cho JH, Kang J.
    Adv Mater; 2022 Mar 05; 34(12):e2106110. PubMed ID: 34933395
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  • 20. Quasi-Van der Waals Epitaxial Growth of γ'-GaSe Nanometer-Thick Films on GaAs(111)B Substrates.
    Yu M, Iddawela SA, Wang J, Hilse M, Thompson JL, Reifsnyder Hickey D, Sinnott SB, Law S.
    ACS Nano; 2024 Jul 02; 18(26):17185-17196. PubMed ID: 38870462
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