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Journal Abstract Search

211 related items for PubMed ID: 27222074

  • 1. Interface Engineering for the Enhancement of Carrier Transport in Black Phosphorus Transistor with Ultra-Thin High-k Gate Dielectric.
    Ling ZP, Zhu JT, Liu X, Ang KW.
    Sci Rep; 2016 May 25; 6():26609. PubMed ID: 27222074
    [Abstract] [Full Text] [Related]

  • 2. Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature.
    Liu X, Ang KW, Yu W, He J, Feng X, Liu Q, Jiang H, Dan Tang, Wen J, Lu Y, Liu W, Cao P, Han S, Wu J, Liu W, Wang X, Zhu D, He Z.
    Sci Rep; 2016 Apr 22; 6():24920. PubMed ID: 27102711
    [Abstract] [Full Text] [Related]

  • 3. Black Phosphorus Transistors with Near Band Edge Contact Schottky Barrier.
    Ling ZP, Sakar S, Mathew S, Zhu JT, Gopinadhan K, Venkatesan T, Ang KW.
    Sci Rep; 2015 Dec 15; 5():18000. PubMed ID: 26667402
    [Abstract] [Full Text] [Related]

  • 4. Effects of HfO2 encapsulation on electrical performances of few-layered MoS2 transistor with ALD HfO2 as back-gate dielectric.
    Xu J, Wen M, Zhao X, Liu L, Song X, Lai PT, Tang WM.
    Nanotechnology; 2018 Aug 24; 29(34):345201. PubMed ID: 29808825
    [Abstract] [Full Text] [Related]

  • 5. Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers.
    Ra HS, Lee AY, Kwak DH, Jeong MH, Lee JS.
    ACS Appl Mater Interfaces; 2018 Jan 10; 10(1):925-932. PubMed ID: 29256593
    [Abstract] [Full Text] [Related]

  • 6. Near-ideal subthreshold swing MoS2 back-gate transistors with an optimized ultrathin HfO2 dielectric layer.
    Pan Y, Jia K, Huang K, Wu Z, Bai G, Yu J, Zhang Z, Zhang Q, Yin H.
    Nanotechnology; 2019 Mar 01; 30(9):095202. PubMed ID: 30561381
    [Abstract] [Full Text] [Related]

  • 7. A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2.
    Zou X, Xu J, Huang H, Zhu Z, Wang H, Li B, Liao L, Fang G.
    Nanotechnology; 2018 Jun 15; 29(24):245201. PubMed ID: 29582776
    [Abstract] [Full Text] [Related]

  • 8. Performance Enhancement in N2 Plasma Modified AlGaN/AlN/GaN MOS-HEMT Using HfAlOX Gate Dielectric with Γ-Shaped Gate Engineering.
    Yang SK, Mazumder S, Wu ZG, Wang YH.
    Materials (Basel); 2021 Mar 21; 14(6):. PubMed ID: 33801062
    [Abstract] [Full Text] [Related]

  • 9. Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric.
    Xia P, Feng X, Ng RJ, Wang S, Chi D, Li C, He Z, Liu X, Ang KW.
    Sci Rep; 2017 Jan 13; 7():40669. PubMed ID: 28084434
    [Abstract] [Full Text] [Related]

  • 10. Interface engineering for a stable chemical structure of oxidized-black phosphorus via self-reduction in AlOx atomic layer deposition.
    Kim DK, Chae J, Hong SB, Park H, Jeong KS, Park HW, Kwon SR, Chung KB, Cho MH.
    Nanoscale; 2018 Dec 13; 10(48):22896-22907. PubMed ID: 30488924
    [Abstract] [Full Text] [Related]

  • 11. Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance.
    Min SW, Lee HS, Choi HJ, Park MK, Nam T, Kim H, Ryu S, Im S.
    Nanoscale; 2013 Jan 21; 5(2):548-51. PubMed ID: 23233087
    [Abstract] [Full Text] [Related]

  • 12. Fundamental Limits on the Subthreshold Slope in Schottky Source/Drain Black Phosphorus Field-Effect Transistors.
    Haratipour N, Namgung S, Oh SH, Koester SJ.
    ACS Nano; 2016 Mar 22; 10(3):3791-800. PubMed ID: 26914179
    [Abstract] [Full Text] [Related]

  • 13. Optimizing Al-doped ZrO2 as the gate dielectric for MoS2 field-effect transistors.
    Song X, Xu J, Liu L, Deng Y, Lai PT, Tang WM.
    Nanotechnology; 2020 Mar 27; 31(13):135206. PubMed ID: 31766028
    [Abstract] [Full Text] [Related]

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  • 15. Enhancing the electrical performance of InAs nanowire field-effect transistors by improving the surface and interface properties by coating with thermally oxidized Y2O3.
    Jiang Y, Shen R, Li T, Tian J, Li S, Tan HH, Jagadish C, Chen Q.
    Nanoscale; 2022 Sep 15; 14(35):12830-12840. PubMed ID: 36039889
    [Abstract] [Full Text] [Related]

  • 16. High-speed black phosphorus field-effect transistors approaching ballistic limit.
    Li X, Yu Z, Xiong X, Li T, Gao T, Wang R, Huang R, Wu Y.
    Sci Adv; 2019 Jun 15; 5(6):eaau3194. PubMed ID: 31245534
    [Abstract] [Full Text] [Related]

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  • 19. Enhanced Performance of Field-Effect Transistors Based on Black Phosphorus Channels Reduced by Galvanic Corrosion of Al Overlayers.
    Lee S, Yoon C, Lee JH, Kim YS, Lee MJ, Kim W, Baik J, Jia Q, Park BH.
    ACS Appl Mater Interfaces; 2018 Jun 06; 10(22):18895-18901. PubMed ID: 29767500
    [Abstract] [Full Text] [Related]

  • 20. Subthreshold swing improvement in MoS2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO2/HfO2 gate dielectric stack.
    Nourbakhsh A, Zubair A, Joglekar S, Dresselhaus M, Palacios T.
    Nanoscale; 2017 May 11; 9(18):6122-6127. PubMed ID: 28447680
    [Abstract] [Full Text] [Related]

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