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Journal Abstract Search
179 related items for PubMed ID: 27240537
1. Resistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device application. Pradhan SK, Xiao B, Mishra S, Killam A, Pradhan AK. Sci Rep; 2016 May 31; 6():26763. PubMed ID: 27240537 [Abstract] [Full Text] [Related]
2. Graphene oxide thin films for flexible nonvolatile memory applications. Jeong HY, Kim JY, Kim JW, Hwang JO, Kim JE, Lee JY, Yoon TH, Cho BJ, Kim SO, Ruoff RS, Choi SY. Nano Lett; 2010 Nov 10; 10(11):4381-6. PubMed ID: 20919689 [Abstract] [Full Text] [Related]
3. Flexible resistive switching bistable memory devices using ZnO nanoparticles embedded in polyvinyl alcohol (PVA) matrix and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS). Hmar JJL. RSC Adv; 2018 May 30; 8(36):20423-20433. PubMed ID: 35541659 [Abstract] [Full Text] [Related]
4. Non-Polar and Complementary Resistive Switching Characteristics in Graphene Oxide devices with Gold Nanoparticles: Diverse Approach for Device Fabrication. Khurana G, Kumar N, Chhowalla M, Scott JF, Katiyar RS. Sci Rep; 2019 Oct 22; 9(1):15103. PubMed ID: 31641183 [Abstract] [Full Text] [Related]
5. Fabrication of carboxymethyl cellulose and graphene oxide bio-nanocomposites for flexible nonvolatile resistive switching memory devices. Liu T, Wu W, Liao KN, Sun Q, Gong X, Roy VAL, Yu ZZ, Li RKY. Carbohydr Polym; 2019 Jun 15; 214():213-220. PubMed ID: 30925991 [Abstract] [Full Text] [Related]
7. Preparation of Polyimide/Graphene Oxide Nanocomposite and Its Application to Nonvolatile Resistive Memory Device. Choi JY, Yu HC, Lee J, Jeon J, Im J, Jang J, Jin SW, Kim KK, Cho S, Chung CM. Polymers (Basel); 2018 Aug 11; 10(8):. PubMed ID: 30960826 [Abstract] [Full Text] [Related]
8. Transformation of threshold volatile switching to quantum point contact originated nonvolatile switching in graphene interface controlled memory devices. Wu Z, Zhao X, Yang Y, Wang W, Zhang X, Wang R, Cao R, Liu Q, Banerjee W. Nanoscale Adv; 2019 Sep 11; 1(9):3753-3760. PubMed ID: 36133528 [Abstract] [Full Text] [Related]
9. Photocatalytic Reduction of Graphene Oxide-TiO2 Nanocomposites for Improving Resistive-Switching Memory Behaviors. Zhao X, Wang Z, Xie Y, Xu H, Zhu J, Zhang X, Liu W, Yang G, Ma J, Liu Y. Small; 2018 Jun 21; ():e1801325. PubMed ID: 29931801 [Abstract] [Full Text] [Related]
10. Resistive Switching in Al/Al2O3/TiO2/Al/PES Flexible Device for Nonvolatile Memory Application. Lin CC, Lee WY, Lee HT. J Nanosci Nanotechnol; 2016 May 21; 16(5):4820-4. PubMed ID: 27483828 [Abstract] [Full Text] [Related]
11. Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid. Oh SI, Rani JR, Hong SM, Jang JH. Nanoscale; 2017 Oct 19; 9(40):15314-15322. PubMed ID: 28820212 [Abstract] [Full Text] [Related]
12. S-Layer Protein for Resistive Switching and Flexible Nonvolatile Memory Device. Moudgil A, Kalyani N, Sinsinbar G, Das S, Mishra P. ACS Appl Mater Interfaces; 2018 Feb 07; 10(5):4866-4873. PubMed ID: 29308639 [Abstract] [Full Text] [Related]
13. Stable Resistive Switching in ZnO/PVA:MoS2 Bilayer Memristor. Sun T, Shi H, Gao S, Zhou Z, Yu Z, Guo W, Li H, Zhang F, Xu Z, Zhang X. Nanomaterials (Basel); 2022 Jun 09; 12(12):. PubMed ID: 35745316 [Abstract] [Full Text] [Related]
14. Flexible All-Inorganic Perovskite CsPbBr3 Nonvolatile Memory Device. Liu D, Lin Q, Zang Z, Wang M, Wangyang P, Tang X, Zhou M, Hu W. ACS Appl Mater Interfaces; 2017 Feb 22; 9(7):6171-6176. PubMed ID: 28112895 [Abstract] [Full Text] [Related]
15. Eco-Friendly Biomemristive Nonvolatile Memory: Harnessing Organic Waste for Sustainable Technology. Roy A, Kumari K, Majumder S, Ray SJ. ACS Appl Bio Mater; 2024 Aug 19; 7(8):5147-5157. PubMed ID: 38976598 [Abstract] [Full Text] [Related]
16. Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions. Huang YJ, Chao SC, Lien DH, Wen CY, He JH, Lee SC. Sci Rep; 2016 Apr 07; 6():23945. PubMed ID: 27052322 [Abstract] [Full Text] [Related]
17. Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPtx Nanocrystals for Resistive Random Access Memory Applications. Wang LG, Cao ZY, Qian X, Zhu L, Cui DP, Li AD, Wu D. ACS Appl Mater Interfaces; 2017 Feb 22; 9(7):6634-6643. PubMed ID: 28139921 [Abstract] [Full Text] [Related]
18. A unipolar nonvolatile resistive switching behavior in a layered transition metal oxide. Wang J, Wang F, Yin L, Sendeku MG, Zhang Y, Cheng R, Wang Z, Li N, Huang W, He J. Nanoscale; 2019 Nov 21; 11(43):20497-20506. PubMed ID: 31657429 [Abstract] [Full Text] [Related]
19. Solution-processed light-induced multilevel non-volatile wearable memory device based on CsPb2Br5 perovskite. Paul T, Sarkar PK, Maiti S, Sahoo A, Chattopadhyay KK. Dalton Trans; 2022 Mar 08; 51(10):3864-3874. PubMed ID: 35171172 [Abstract] [Full Text] [Related]
20. Highly-Ordered 3D Vertical Resistive Switching Memory Arrays with Ultralow Power Consumption and Ultrahigh Density. Al-Haddad A, Wang C, Qi H, Grote F, Wen L, Bernhard J, Vellacheri R, Tarish S, Nabi G, Kaiser U, Lei Y. ACS Appl Mater Interfaces; 2016 Sep 07; 8(35):23348-55. PubMed ID: 27525738 [Abstract] [Full Text] [Related] Page: [Next] [New Search]