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Journal Abstract Search

315 related items for PubMed ID: 27327619

  • 41.
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  • 44. Spin-Orbit Torque Magnetization Switching in MoTe2 /Permalloy Heterostructures.
    Liang S, Shi S, Hsu CH, Cai K, Wang Y, He P, Wu Y, Pereira VM, Yang H.
    Adv Mater; 2020 Sep; 32(37):e2002799. PubMed ID: 32743908
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  • 46. Magnetization dynamics at finite temperature in CoFeB-MgO based MTJs.
    Sampan-A-Pai S, Phoomatna R, Boonruesi W, Meo A, Chureemart J, Evans RFL, Chantrell RW, Chureemart P.
    Sci Rep; 2023 Feb 14; 13(1):2637. PubMed ID: 36788254
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  • 47. Anomalous Tunnel Magnetoresistance and Spin Transfer Torque in Magnetic Tunnel Junctions with Embedded Nanoparticles.
    Useinov A, Ye LX, Useinov N, Wu TH, Lai CH.
    Sci Rep; 2015 Dec 18; 5():18026. PubMed ID: 26681336
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  • 49. Progress in Spin Logic Devices Based on Domain-Wall Motion.
    Vermeulen BB, Sorée B, Couet S, Temst K, Nguyen VD.
    Micromachines (Basel); 2024 May 24; 15(6):. PubMed ID: 38930666
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  • 51. Field-Free Deterministic Magnetization Switching Induced by Interlaced Spin-Orbit Torques.
    Wang M, Wang Z, Wang C, Zhao W.
    ACS Appl Mater Interfaces; 2021 May 05; 13(17):20763-20769. PubMed ID: 33886280
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  • 52. Low-Power and Field-Free Perpendicular Magnetic Memory Driven by Topological Insulators.
    Cui B, Chen A, Zhang X, Fang B, Zeng Z, Zhang P, Zhang J, He W, Yu G, Yan P, Han X, Wang KL, Zhang X, Wu H.
    Adv Mater; 2023 Aug 05; 35(31):e2302350. PubMed ID: 37141542
    [Abstract] [Full Text] [Related]

  • 53. Large Tunneling Magnetoresistance in VSe2/MoS2 Magnetic Tunnel Junction.
    Zhou J, Qiao J, Duan CG, Bournel A, Wang KL, Zhao W.
    ACS Appl Mater Interfaces; 2019 May 15; 11(19):17647-17653. PubMed ID: 30983319
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  • 54. Reconfigurable spintronic logic gate utilizing precessional magnetization switching.
    Liu T, Li X, An H, Chen S, Zhao Y, Yang S, Xu X, Zhou C, Zhang H, Zhou Y.
    Sci Rep; 2024 Jun 26; 14(1):14796. PubMed ID: 38926523
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  • 56. Magnetization switching by combining electric field and spin-transfer torque effects in a perpendicular magnetic tunnel junction.
    Zhang X, Wang C, Liu Y, Zhang Z, Jin QY, Duan CG.
    Sci Rep; 2016 Jan 06; 6():18719. PubMed ID: 26732287
    [Abstract] [Full Text] [Related]

  • 57. Skyrmion-Mediated Voltage-Controlled Switching of Ferromagnets for Reliable and Energy-Efficient Two-Terminal Memory.
    Bhattacharya D, Atulasimha J.
    ACS Appl Mater Interfaces; 2018 May 23; 10(20):17455-17462. PubMed ID: 29703079
    [Abstract] [Full Text] [Related]

  • 58. Ferromagnetic resonance excited by interfacial microwave electric field: the role of current-induced torques.
    Deka A, Rana B, Otani Y, Fukuma Y.
    J Phys Condens Matter; 2023 Mar 24; 35(21):. PubMed ID: 36898153
    [Abstract] [Full Text] [Related]

  • 59. Field-Free Spin-Orbit Torque-Induced Magnetization Switching in the IrMn/CoTb Bilayers with a Spontaneous In-Plane Exchange Bias.
    Liu R, Chen J, Li Z, Lu X, Lu Y, Liu T, Zhang Y, Yuan Y, Wei L, Wu D, You B, Zhang W, Du J.
    ACS Appl Mater Interfaces; 2023 Oct 24. PubMed ID: 37874631
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  • 60.
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