These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
7. S-Layer Protein for Resistive Switching and Flexible Nonvolatile Memory Device. Moudgil A, Kalyani N, Sinsinbar G, Das S, Mishra P. ACS Appl Mater Interfaces; 2018 Feb 07; 10(5):4866-4873. PubMed ID: 29308639 [Abstract] [Full Text] [Related]
8. In situ observation of filamentary conducting channels in an asymmetric Ta₂O5-x/TaO2-x bilayer structure. Park GS, Kim YB, Park SY, Li XS, Heo S, Lee MJ, Chang M, Kwon JH, Kim M, Chung UI, Dittmann R, Waser R, Kim K. Nat Commun; 2013 Feb 07; 4():2382. PubMed ID: 24008898 [Abstract] [Full Text] [Related]
9. Transparent resistive switching memory using aluminum oxide on a flexible substrate. Yeom SW, Shin SC, Kim TY, Ha HJ, Lee YH, Shim JW, Ju BK. Nanotechnology; 2016 Feb 19; 27(7):07LT01. PubMed ID: 26763473 [Abstract] [Full Text] [Related]
16. Resistive switching in single epitaxial ZnO nanoislands. Qi J, Olmedo M, Ren J, Zhan N, Zhao J, Zheng JG, Liu J. ACS Nano; 2012 Feb 28; 6(2):1051-8. PubMed ID: 22257020 [Abstract] [Full Text] [Related]
17. Improved Uniformity of TaOx-Based Resistive Switching Memory Device by Inserting Thin SiO2 Layer for Neuromorphic System. Ju D, Kim S, Jang J, Kim S. Materials (Basel); 2023 Sep 09; 16(18):. PubMed ID: 37763413 [Abstract] [Full Text] [Related]
18. Resistive Switching Memory Devices Based on Body Fluid of Bombyx mori L. Wang L, Wen D. Micromachines (Basel); 2019 Aug 16; 10(8):. PubMed ID: 31426438 [Abstract] [Full Text] [Related]
19. In Situ Observation of Resistive Switching in an Asymmetric Graphene Oxide Bilayer Structure. Kim S, Jung HJ, Kim JC, Lee KS, Park SS, Dravid VP, He K, Jeong HY. ACS Nano; 2018 Jul 24; 12(7):7335-7342. PubMed ID: 29985600 [Abstract] [Full Text] [Related]