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PUBMED FOR HANDHELDS

Journal Abstract Search


313 related items for PubMed ID: 27704752

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  • 5. Transparent amorphous strontium titanate resistive memories with transient photo-response.
    Ahmed T, Walia S, Kim J, Nili H, Ramanathan R, Mayes ELH, Lau DWM, Kavehei O, Bansal V, Bhaskaran M, Sriram S.
    Nanoscale; 2017 Oct 05; 9(38):14690-14702. PubMed ID: 28944813
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  • 7. S-Layer Protein for Resistive Switching and Flexible Nonvolatile Memory Device.
    Moudgil A, Kalyani N, Sinsinbar G, Das S, Mishra P.
    ACS Appl Mater Interfaces; 2018 Feb 07; 10(5):4866-4873. PubMed ID: 29308639
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  • 8. In situ observation of filamentary conducting channels in an asymmetric Ta₂O5-x/TaO2-x bilayer structure.
    Park GS, Kim YB, Park SY, Li XS, Heo S, Lee MJ, Chang M, Kwon JH, Kim M, Chung UI, Dittmann R, Waser R, Kim K.
    Nat Commun; 2013 Feb 07; 4():2382. PubMed ID: 24008898
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  • 9. Transparent resistive switching memory using aluminum oxide on a flexible substrate.
    Yeom SW, Shin SC, Kim TY, Ha HJ, Lee YH, Shim JW, Ju BK.
    Nanotechnology; 2016 Feb 19; 27(7):07LT01. PubMed ID: 26763473
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  • 16. Resistive switching in single epitaxial ZnO nanoislands.
    Qi J, Olmedo M, Ren J, Zhan N, Zhao J, Zheng JG, Liu J.
    ACS Nano; 2012 Feb 28; 6(2):1051-8. PubMed ID: 22257020
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  • 17. Improved Uniformity of TaOx-Based Resistive Switching Memory Device by Inserting Thin SiO2 Layer for Neuromorphic System.
    Ju D, Kim S, Jang J, Kim S.
    Materials (Basel); 2023 Sep 09; 16(18):. PubMed ID: 37763413
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  • 18. Resistive Switching Memory Devices Based on Body Fluid of Bombyx mori L.
    Wang L, Wen D.
    Micromachines (Basel); 2019 Aug 16; 10(8):. PubMed ID: 31426438
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  • 19. In Situ Observation of Resistive Switching in an Asymmetric Graphene Oxide Bilayer Structure.
    Kim S, Jung HJ, Kim JC, Lee KS, Park SS, Dravid VP, He K, Jeong HY.
    ACS Nano; 2018 Jul 24; 12(7):7335-7342. PubMed ID: 29985600
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