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Journal Abstract Search

100 related items for PubMed ID: 28120988

  • 21. Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy.
    Tchernycheva M, Harmand JC, Patriarche G, Travers L, Cirlin GE.
    Nanotechnology; 2006 Aug 28; 17(16):4025-30. PubMed ID: 21727532
    [Abstract] [Full Text] [Related]

  • 22. TEM determination of directions of (Ga,Mn)As nanowires grown by MBE on GaAs(001) substrates.
    Dłuzewski P, Sadowski J, Kret S, Dabrowski J, Sobczak K.
    J Microsc; 2009 Nov 28; 236(2):115-8. PubMed ID: 19903235
    [Abstract] [Full Text] [Related]

  • 23. Growth of dilute nitride GaAsN/GaAs heterostructure nanowires on Si substrates.
    Araki Y, Yamaguchi M, Ishikawa F.
    Nanotechnology; 2013 Feb 15; 24(6):065601. PubMed ID: 23324475
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  • 24. Reconstruction control of magnetic properties during epitaxial growth of ferromagnetic Mn3-deltaGa on Wurtzite GaN(0001).
    Lu E, Ingram DC, Smith AR, Knepper JW, Yang FY.
    Phys Rev Lett; 2006 Oct 06; 97(14):146101. PubMed ID: 17155269
    [Abstract] [Full Text] [Related]

  • 25. Control of GaAs nanowire morphology and crystal structure.
    Plante MC, Lapierre RR.
    Nanotechnology; 2008 Dec 10; 19(49):495603. PubMed ID: 21730678
    [Abstract] [Full Text] [Related]

  • 26. Axially lattice-matched wurtzite/rock-salt GaAs/Pb1-xSnxTe nanowires.
    Dad S, Dziawa P, Zajkowska-Pietrzak W, Kret S, Kozłowski M, Wójcik M, Sadowski J.
    Sci Rep; 2024 Jan 05; 14(1):589. PubMed ID: 38182872
    [Abstract] [Full Text] [Related]

  • 27. In(x)Ga(1-x)As nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology.
    Ameruddin AS, Fonseka HA, Caroff P, Wong-Leung J, Op het Veld RL, Boland JL, Johnston MB, Tan HH, Jagadish C.
    Nanotechnology; 2015 May 22; 26(20):205604. PubMed ID: 25927420
    [Abstract] [Full Text] [Related]

  • 28. Formation of wurtzite sections in self-catalyzed GaP nanowires by droplet consumption.
    Fedorov VV, Dvoretckaia LN, Kirilenko DA, Mukhin IS, Dubrovskii VG.
    Nanotechnology; 2021 Sep 15; 32(49):. PubMed ID: 34433149
    [Abstract] [Full Text] [Related]

  • 29. Growth of wurtzite Al x Ga1-x P nanowire shells and characterization by Raman spectroscopy.
    Berg A, Heurlin M, Tsopanidis S, Pistol ME, Borgström MT.
    Nanotechnology; 2017 Jan 20; 28(3):035706. PubMed ID: 27966463
    [Abstract] [Full Text] [Related]

  • 30. Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy.
    Bauer B, Rudolph A, Soda M, Fontcuberta i Morral A, Zweck J, Schuh D, Reiger E.
    Nanotechnology; 2010 Oct 29; 21(43):435601. PubMed ID: 20876983
    [Abstract] [Full Text] [Related]

  • 31. Stages in molecular beam epitaxy growth of GaAs nanowires studied by x-ray diffraction.
    Mariager SO, Lauridsen SL, Sørensen CB, Dohn A, Willmott PR, Nygård J, Feidenhans'l R.
    Nanotechnology; 2010 Mar 19; 21(11):115603. PubMed ID: 20173223
    [Abstract] [Full Text] [Related]

  • 32. Formation of two-dimensionally confined superparamagnetic (Mn, Ga)As nanocrystals in high-temperature annealed (Ga, Mn)As/GaAs superlattices.
    Sadowski J, Domagala JZ, Mathieu R, Kovacs A, Dłużewski P.
    J Phys Condens Matter; 2013 May 15; 25(19):196005. PubMed ID: 23603378
    [Abstract] [Full Text] [Related]

  • 33. Growth map for Ga-assisted growth of GaAs nanowires on Si(111) substrates by molecular beam epitaxy.
    Bastiman F, Küpers H, Somaschini C, Geelhaar L.
    Nanotechnology; 2016 Mar 04; 27(9):095601. PubMed ID: 26822408
    [Abstract] [Full Text] [Related]

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  • 35. Growth of InAs/InP core-shell nanowires with various pure crystal structures.
    Gorji Ghalamestani S, Heurlin M, Wernersson LE, Lehmann S, Dick KA.
    Nanotechnology; 2012 Jul 20; 23(28):285601. PubMed ID: 22717421
    [Abstract] [Full Text] [Related]

  • 36. Crystal phase control in GaAs nanowires: opposing trends in the Ga- and As-limited growth regimes.
    Lehmann S, Jacobsson D, Dick KA.
    Nanotechnology; 2015 Jul 31; 26(30):301001. PubMed ID: 26160888
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  • 39. Influence of substrate orientation on the structural quality of GaAs nanowires in molecular beam epitaxy.
    Zhang Z, Shi SX, Chen PP, Lu W, Zou J.
    Nanotechnology; 2015 Jan 26; 26(25):255601. PubMed ID: 26024290
    [Abstract] [Full Text] [Related]

  • 40. Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy.
    Dheeraj DL, Munshi AM, Scheffler M, van Helvoort AT, Weman H, Fimland BO.
    Nanotechnology; 2013 Jan 11; 24(1):015601. PubMed ID: 23220972
    [Abstract] [Full Text] [Related]

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