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155 related items for PubMed ID: 28263547

  • 1. Comparative Study of Antimony Doping Effects on the Performance of Solution-Processed ZIO and ZTO Field-Effect Transistors.
    Baek JH, Seol H, Cho K, Yang H, Jeong JK.
    ACS Appl Mater Interfaces; 2017 Mar 29; 9(12):10904-10913. PubMed ID: 28263547
    [Abstract] [Full Text] [Related]

  • 2. Toward an Understanding of Thin-Film Transistor Performance in Solution-Processed Amorphous Zinc Tin Oxide (ZTO) Thin Films.
    Sanctis S, Koslowski N, Hoffmann R, Guhl C, Erdem E, Weber S, Schneider JJ.
    ACS Appl Mater Interfaces; 2017 Jun 28; 9(25):21328-21337. PubMed ID: 28573850
    [Abstract] [Full Text] [Related]

  • 3. Impact of the cation composition on the electrical performance of solution-processed zinc tin oxide thin-film transistors.
    Kim YJ, Oh S, Yang BS, Han SJ, Lee HW, Kim HJ, Jeong JK, Hwang CS, Kim HJ.
    ACS Appl Mater Interfaces; 2014 Aug 27; 6(16):14026-36. PubMed ID: 25090286
    [Abstract] [Full Text] [Related]

  • 4. UV-visible spectroscopic analysis of electrical properties in alkali metal-doped amorphous zinc tin oxide thin-film transistors.
    Lim KH, Kim K, Kim S, Park SY, Kim H, Kim YS.
    Adv Mater; 2013 Jun 04; 25(21):2994-3000. PubMed ID: 23616138
    [Abstract] [Full Text] [Related]

  • 5. An aqueous solution-based doping strategy for large-scale synthesis of Sb-doped ZnO nanowires.
    Wang F, Seo JH, Bayerl D, Shi J, Mi H, Ma Z, Zhao D, Shuai Y, Zhou W, Wang X.
    Nanotechnology; 2011 Jun 03; 22(22):225602. PubMed ID: 21454935
    [Abstract] [Full Text] [Related]

  • 6. Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors.
    Je SY, Son BG, Kim HG, Park MY, Do LM, Choi R, Jeong JK.
    ACS Appl Mater Interfaces; 2014 Nov 12; 6(21):18693-703. PubMed ID: 25285585
    [Abstract] [Full Text] [Related]

  • 7. Chemical stability and electrical performance of dual-active-layered zinc-tin-oxide/indium-gallium-zinc-oxide thin-film transistors using a solution process.
    Kim CH, Rim YS, Kim HJ.
    ACS Appl Mater Interfaces; 2013 Jul 10; 5(13):6108-12. PubMed ID: 23738534
    [Abstract] [Full Text] [Related]

  • 8. High-Performance All-Printed Amorphous Oxide FETs and Logics with Electronically Compatible Electrode/Channel Interface.
    Sharma BK, Stoesser A, Mondal SK, Garlapati SK, Fawey MH, Chakravadhanula VSK, Kruk R, Hahn H, Dasgupta S.
    ACS Appl Mater Interfaces; 2018 Jul 05; 10(26):22408-22418. PubMed ID: 29893115
    [Abstract] [Full Text] [Related]

  • 9. Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors.
    Zhang X, Lee H, Kwon JH, Kim EJ, Park J.
    Materials (Basel); 2017 Jul 31; 10(8):. PubMed ID: 28773242
    [Abstract] [Full Text] [Related]

  • 10. Effects of Ga:N addition on the electrical performance of zinc tin oxide thin film transistor by solution-processing.
    Ahn BD, Jeon HJ, Park JS.
    ACS Appl Mater Interfaces; 2014 Jun 25; 6(12):9228-35. PubMed ID: 24892383
    [Abstract] [Full Text] [Related]

  • 11. High Performance Metal Oxide Field-Effect Transistors with a Reverse Offset Printed Cu Source/Drain Electrode.
    Han YH, Won JY, Yoo HS, Kim JH, Choi R, Jeong JK.
    ACS Appl Mater Interfaces; 2016 Jan 20; 8(2):1156-63. PubMed ID: 26716349
    [Abstract] [Full Text] [Related]

  • 12. Dual-Functional Superoxide Precursor To Improve the Electrical Characteristics of Oxide Thin Film Transistors.
    Jung TS, Lee H, Kim HJ, Lee JH, Kim HJ.
    ACS Appl Mater Interfaces; 2018 Dec 26; 10(51):44554-44560. PubMed ID: 30511830
    [Abstract] [Full Text] [Related]

  • 13. Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors.
    Avis C, Kim Y, Jang J.
    Materials (Basel); 2019 Oct 14; 12(20):. PubMed ID: 31614961
    [Abstract] [Full Text] [Related]

  • 14. Photobias instability of high performance solution processed amorphous zinc tin oxide transistors.
    Kim YJ, Yang BS, Oh S, Han SJ, Lee HW, Heo J, Jeong JK, Kim HJ.
    ACS Appl Mater Interfaces; 2013 Apr 24; 5(8):3255-61. PubMed ID: 23540523
    [Abstract] [Full Text] [Related]

  • 15. Improved electrical performance and bias stability of solution-processed active bilayer structure of indium zinc oxide based TFT.
    Seo JS, Bae BS.
    ACS Appl Mater Interfaces; 2014 Sep 10; 6(17):15335-43. PubMed ID: 25116128
    [Abstract] [Full Text] [Related]

  • 16. Trap-Assisted Enhanced Bias Illumination Stability of Oxide Thin Film Transistor by Praseodymium Doping.
    Xu H, Xu M, Li M, Chen Z, Zou J, Wu W, Qiao X, Tao H, Wang L, Ning H, Ma D, Peng J.
    ACS Appl Mater Interfaces; 2019 Feb 06; 11(5):5232-5239. PubMed ID: 30640426
    [Abstract] [Full Text] [Related]

  • 17. Atomic Layer Deposition Process-Enabled Carrier Mobility Boosting in Field-Effect Transistors through a Nanoscale ZnO/IGO Heterojunction.
    Seul HJ, Kim MJ, Yang HJ, Cho MH, Cho MH, Song WB, Jeong JK.
    ACS Appl Mater Interfaces; 2020 Jul 29; 12(30):33887-33898. PubMed ID: 32571011
    [Abstract] [Full Text] [Related]

  • 18. High-performance transistors based on zinc tin oxides by single spin-coating process.
    Zhao Y, Duan L, Dong G, Zhang D, Qiao J, Wang L, Qiu Y.
    Langmuir; 2013 Jan 08; 29(1):151-7. PubMed ID: 23210920
    [Abstract] [Full Text] [Related]

  • 19. Tuning electrical properties in amorphous zinc tin oxide thin films for solution processed electronics.
    Chandra RD, Rao M, Zhang K, Prabhakar RR, Shi C, Zhang J, Mhaisalkar SG, Mathews N.
    ACS Appl Mater Interfaces; 2014 Jan 22; 6(2):773-7. PubMed ID: 24380364
    [Abstract] [Full Text] [Related]

  • 20. Dual electrical behavior of multivalent metal cation-based oxide and its application to thin-film transistors with high mobility and excellent photobias stability.
    Yun MG, Ahn CH, Cho SW, Kim SH, Kim YK, Cho HK.
    ACS Appl Mater Interfaces; 2015 Mar 25; 7(11):6118-24. PubMed ID: 25714371
    [Abstract] [Full Text] [Related]

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