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Journal Abstract Search

246 related items for PubMed ID: 28332569

  • 1. Voltage control of magnetic anisotropy in epitaxial Ru/Co2FeAl/MgO heterostructures.
    Wen Z, Sukegawa H, Seki T, Kubota T, Takanashi K, Mitani S.
    Sci Rep; 2017 Mar 23; 7():45026. PubMed ID: 28332569
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  • 6. Voltage-Assisted Magnetic Switching in MgO/CoFeB-Based Magnetic Tunnel Junctions by Way of Interface Reconstruction.
    Ko J, Hong J.
    ACS Appl Mater Interfaces; 2017 Dec 06; 9(48):42296-42301. PubMed ID: 29154533
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  • 7. Observation of Skyrmions at Room Temperature in Co2FeAl Heusler Alloy Ultrathin Film Heterostructures.
    Husain S, Sisodia N, Chaurasiya AK, Kumar A, Singh JP, Yadav BS, Akansel S, Chae KH, Barman A, Muduli PK, Svedlindh P, Chaudhary S.
    Sci Rep; 2019 Jan 31; 9(1):1085. PubMed ID: 30705297
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  • 9. Underlayer material dependent symmetric and asymmetric behavior of voltage-controlled magnetic anisotropy in CoFeB films.
    Rana B, Miura K, Takahashi H, Otani Y.
    J Phys Condens Matter; 2020 Jul 17; 32(41):. PubMed ID: 32503010
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  • 11. Understanding stability diagram of perpendicular magnetic tunnel junctions.
    Skowroński W, Czapkiewicz M, Ziętek S, Chęciński J, Frankowski M, Rzeszut P, Wrona J.
    Sci Rep; 2017 Aug 31; 7(1):10172. PubMed ID: 28860571
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  • 13. High-Throughput Design of Interfacial Perpendicular Magnetic Anisotropy at Heusler/MgO Heterostructures.
    Jiang S, Nazir S, Yang K.
    ACS Appl Mater Interfaces; 2022 Feb 23; 14(7):9734-9743. PubMed ID: 35139635
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  • 15. Low Gilbert Damping Constant in Perpendicularly Magnetized W/CoFeB/MgO Films with High Thermal Stability.
    Lattery DM, Zhang D, Zhu J, Hang X, Wang JP, Wang X.
    Sci Rep; 2018 Sep 06; 8(1):13395. PubMed ID: 30190535
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  • 16. Effects of Interfacial Termination, Oxidation, and Film Thickness on the Magnetic Anisotropy in Mn2.25Co0.75Ga0.5Sn0.5/MgO Heterostructures.
    Liu Y, Wang L.
    ACS Appl Mater Interfaces; 2021 Oct 06; 13(39):47293-47301. PubMed ID: 34558901
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  • 17. Large Perpendicular Magnetic Anisotropy in Ta/CoFeB/MgO on Full-Coverage Monolayer MoS2 and First-Principles Study of Its Electronic Structure.
    Zhou Z, Marcon P, Devaux X, Pigeat P, Bouché A, Migot S, Jaafar A, Arras R, Vergnat M, Ren L, Tornatzky H, Robert C, Marie X, George JM, Jaffrès HY, Stoffel M, Rinnert H, Wei Z, Renucci P, Calmels L, Lu Y.
    ACS Appl Mater Interfaces; 2021 Jul 14; 13(27):32579-32589. PubMed ID: 34196522
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  • 18. Predictive Materials Design of Magnetic Random-Access Memory Based on Nanoscale Atomic Structure and Element Distribution.
    Li X, Sasaki T, Grezes C, Wu D, Wong K, Bi C, Ong PV, Ebrahimi F, Yu G, Kioussis N, Wang W, Ohkubo T, Khalili Amiri P, Wang KL.
    Nano Lett; 2019 Dec 11; 19(12):8621-8629. PubMed ID: 31697502
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  • 19. Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control.
    Liu H, Wang R, Guo P, Wen Z, Feng J, Wei H, Han X, Ji Y, Zhang S.
    Sci Rep; 2015 Dec 14; 5():18269. PubMed ID: 26658213
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