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Journal Abstract Search

797 related items for PubMed ID: 28438011

  • 1. Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy.
    Wang CY, Hong YC, Ko ZJ, Su YW, Huang JH.
    Nanoscale Res Lett; 2017 Dec; 12(1):290. PubMed ID: 28438011
    [Abstract] [Full Text] [Related]

  • 2. Morphology- and orientation-controlled gallium arsenide nanowires on silicon substrates.
    Ihn SG, Song JI, Kim TW, Leem DS, Lee T, Lee SG, Koh EK, Song K.
    Nano Lett; 2007 Jan; 7(1):39-44. PubMed ID: 17212437
    [Abstract] [Full Text] [Related]

  • 3. Evidence for structural phase transitions induced by the triple phase line shift in self-catalyzed GaAs nanowires.
    Yu X, Wang H, Lu J, Zhao J, Misuraca J, Xiong P, von Molnár S.
    Nano Lett; 2012 Oct 10; 12(10):5436-42. PubMed ID: 22984828
    [Abstract] [Full Text] [Related]

  • 4. A Novel Growth Method To Improve the Quality of GaAs Nanowires Grown by Ga-Assisted Chemical Beam Epitaxy.
    García Núñez C, Braña AF, López N, García BJ.
    Nano Lett; 2018 Jun 13; 18(6):3608-3615. PubMed ID: 29739187
    [Abstract] [Full Text] [Related]

  • 5. All zinc-blende GaAs/(Ga,Mn)As core-shell nanowires with ferromagnetic ordering.
    Yu X, Wang H, Pan D, Zhao J, Misuraca J, von Molnár S, Xiong P.
    Nano Lett; 2013 Apr 10; 13(4):1572-7. PubMed ID: 23517546
    [Abstract] [Full Text] [Related]

  • 6. Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy.
    Dheeraj DL, Munshi AM, Scheffler M, van Helvoort AT, Weman H, Fimland BO.
    Nanotechnology; 2013 Jan 11; 24(1):015601. PubMed ID: 23220972
    [Abstract] [Full Text] [Related]

  • 7. Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates.
    Gas K, Sadowski J, Kasama T, Siusys A, Zaleszczyk W, Wojciechowski T, Morhange JF, Altintaş A, Xu HQ, Szuszkiewicz W.
    Nanoscale; 2013 Aug 21; 5(16):7410-8. PubMed ID: 23832244
    [Abstract] [Full Text] [Related]

  • 8. Si Doping of Vapor-Liquid-Solid GaAs Nanowires: n-Type or p-Type?
    Hijazi H, Monier G, Gil E, Trassoudaine A, Bougerol C, Leroux C, Castellucci D, Robert-Goumet C, Hoggan PE, André Y, Isik Goktas N, LaPierre RR, Dubrovskii VG.
    Nano Lett; 2019 Jul 10; 19(7):4498-4504. PubMed ID: 31203632
    [Abstract] [Full Text] [Related]

  • 9. Bi incorporation and segregation in the MBE-grown GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires.
    Sadowski J, Kaleta A, Kryvyi S, Janaszko D, Kurowska B, Bilska M, Wojciechowski T, Domagala JZ, Sanchez AM, Kret S.
    Sci Rep; 2022 Apr 09; 12(1):6007. PubMed ID: 35397635
    [Abstract] [Full Text] [Related]

  • 10. Nondestructive Characterizations of Au-Catalyzed GaAs Nanowires on GaAs(111)B Substrates via Identifications of 1st Order Optical Phonon Modes Using μ-Raman Spectroscopy.
    Park JH, Kim RS, Park SJ, Park GC, Chung CH.
    J Nanosci Nanotechnol; 2020 Jul 01; 20(7):4358-4363. PubMed ID: 31968474
    [Abstract] [Full Text] [Related]

  • 11. GaAs Core/SrTiO3 Shell Nanowires Grown by Molecular Beam Epitaxy.
    Guan X, Becdelievre J, Meunier B, Benali A, Saint-Girons G, Bachelet R, Regreny P, Botella C, Grenet G, Blanchard NP, Jaurand X, Silly MG, Sirotti F, Chauvin N, Gendry M, Penuelas J.
    Nano Lett; 2016 Apr 13; 16(4):2393-9. PubMed ID: 27008537
    [Abstract] [Full Text] [Related]

  • 12. Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: ab initio simulations supporting center nucleation.
    André Y, Lekhal K, Hoggan P, Avit G, Cadiz F, Rowe A, Paget D, Petit E, Leroux C, Trassoudaine A, Ramdani MR, Monier G, Colas D, Ajib R, Castelluci D, Gil E.
    J Chem Phys; 2014 May 21; 140(19):194706. PubMed ID: 24852556
    [Abstract] [Full Text] [Related]

  • 13. Self-catalyzed VLS grown InAs nanowires with twinning superlattices.
    Grap T, Rieger T, Blömers Ch, Schäpers T, Grützmacher D, Lepsa MI.
    Nanotechnology; 2013 Aug 23; 24(33):335601. PubMed ID: 23881182
    [Abstract] [Full Text] [Related]

  • 14. Growth of stacking-faults-free zinc blende GaAs nanowires on Si substrate by using AlGaAs/GaAs buffer layers.
    Huang H, Ren X, Ye X, Guo J, Wang Q, Yang Y, Cai S, Huang Y.
    Nano Lett; 2010 Jan 23; 10(1):64-8. PubMed ID: 20000817
    [Abstract] [Full Text] [Related]

  • 15. Defect-free zinc-blende structured InAs nanowires realized by in situ two V/III ratio growth in molecular beam epitaxy.
    Zhang Z, Lu ZY, Chen PP, Lu W, Zou J.
    Nanoscale; 2015 Aug 07; 7(29):12592-7. PubMed ID: 26145435
    [Abstract] [Full Text] [Related]

  • 16. Oscillations of As Concentration and Electron-to-Hole Ratio in Si-Doped GaAs Nanowires.
    Dubrovskii VG, Hijazi H.
    Nanomaterials (Basel); 2020 Apr 27; 10(5):. PubMed ID: 32349326
    [Abstract] [Full Text] [Related]

  • 17. Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy.
    Tchernycheva M, Harmand JC, Patriarche G, Travers L, Cirlin GE.
    Nanotechnology; 2006 Aug 28; 17(16):4025-30. PubMed ID: 21727532
    [Abstract] [Full Text] [Related]

  • 18. High quality GaAs nanowires grown on glass substrates.
    Dhaka V, Haggren T, Jussila H, Jiang H, Kauppinen E, Huhtio T, Sopanen M, Lipsanen H.
    Nano Lett; 2012 Apr 11; 12(4):1912-8. PubMed ID: 22432446
    [Abstract] [Full Text] [Related]

  • 19. Catalyst orientation-induced growth of defect-free zinc-blende structured ⟨001̅⟩ InAs nanowires.
    Zhang Z, Zheng K, Lu ZY, Chen PP, Lu W, Zou J.
    Nano Lett; 2015 Feb 11; 15(2):876-82. PubMed ID: 25580886
    [Abstract] [Full Text] [Related]

  • 20. Formation Mechanism of Twinning Superlattices in Doped GaAs Nanowires.
    Isik Goktas N, Sokolovskii A, Dubrovskii VG, LaPierre RR.
    Nano Lett; 2020 May 13; 20(5):3344-3351. PubMed ID: 32239956
    [Abstract] [Full Text] [Related]

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