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Journal Abstract Search

204 related items for PubMed ID: 28535064

  • 1. Ten-Fold Enhancement of InAs Nanowire Photoluminescence Emission with an InP Passivation Layer.
    Jurczak P, Zhang Y, Wu J, Sanchez AM, Aagesen M, Liu H.
    Nano Lett; 2017 Jun 14; 17(6):3629-3633. PubMed ID: 28535064
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  • 2. Enhanced luminescence properties of InAs nanowires via organic and inorganic sulfide passivation.
    Li B, Li S, Sun Y, Li S, Chen G, Wang X.
    Nanotechnology; 2019 Nov 01; 30(44):445704. PubMed ID: 31365914
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  • 3. Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core-Shell Nanowires.
    Ji X, Chen X, Yang X, Zhang X, Shao J, Yang T.
    Nanoscale Res Lett; 2018 Sep 05; 13(1):269. PubMed ID: 30187239
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  • 9. Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature.
    Zhang G, Takiguchi M, Tateno K, Tawara T, Notomi M, Gotoh H.
    Sci Adv; 2019 Feb 05; 5(2):eaat8896. PubMed ID: 30801006
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  • 12. Long-Term Stability and Optoelectronic Performance Enhancement of InAsP Nanowires with an Ultrathin InP Passivation Layer.
    Chen L, Adeyemo SO, Fonseka HA, Liu H, Kar S, Yang H, Velichko A, Mowbray DJ, Cheng Z, Sanchez AM, Joyce HJ, Zhang Y.
    Nano Lett; 2022 Apr 27; 22(8):3433-3439. PubMed ID: 35420433
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  • 13. Uncooled Photodetector at Short-Wavelength Infrared Using InAs Nanowire Photoabsorbers on InP with p- n Heterojunctions.
    Ren D, Meng X, Rong Z, Cao M, Farrell AC, Somasundaram S, Azizur-Rahman KM, Williams BS, Huffaker DL.
    Nano Lett; 2018 Dec 12; 18(12):7901-7908. PubMed ID: 30444964
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  • 16. Diameter-tailored telecom-band luminescence in InP/InAs heterostructure nanowires grown on InP (111)B substrate with continuously-modulated diameter from microscale to nanoscale.
    Zhang G, Tateno K, Sogawa T, Gotoh H.
    Nanotechnology; 2018 Apr 02; 29(15):155202. PubMed ID: 29376842
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  • 18. Fermi energy dependence of the optical emission in core/shell InAs nanowire homostructures.
    Möller M, Oliveira DS, Sahoo PK, Cotta MA, Iikawa F, Motisuke P, Molina-Sánchez A, de Lima MM, García-Cristóbal A, Cantarero A.
    Nanotechnology; 2017 Jul 21; 28(29):295702. PubMed ID: 28574403
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  • 20. Seeding layer assisted selective-area growth of As-rich InAsP nanowires on InP substrates.
    Ren D, Farrell AC, Williams BS, Huffaker DL.
    Nanoscale; 2017 Jun 22; 9(24):8220-8228. PubMed ID: 28580981
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