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Pubmed for Handhelds

PUBMED FOR HANDHELDS

Journal Abstract Search

276 related items for PubMed ID: 28571463

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  • 2. A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT.
    Li J, Yuan Y, Yuan B, Fan J, Zeng J, Yu Z.
    Micromachines (Basel); 2023 Jun 20; 14(6):. PubMed ID: 37374861
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  • 3. C-Band 30 W High PAE Power Amplifier MMIC with Second Harmonic Suppression for Radar Network Application.
    Yang F, Song L, Xu Y.
    Micromachines (Basel); 2022 Nov 26; 13(12):. PubMed ID: 36557378
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  • 6. Investigation on Temperature Behavior for a GaAs E-pHEMT MMIC LNA.
    Lin Q, Jia L, Wu H, Wang X.
    Micromachines (Basel); 2022 Jul 15; 13(7):. PubMed ID: 35888937
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  • 8. Differential BroadBand (1-16 GHz) MMIC GaAs mHEMT Low-Noise Amplifier for Radio Astronomy Applications and Sensing.
    Jimenez-Martin JL, Gonzalez-Posadas V, Parra-Cerrada A, Espinosa-Adams D, Segovia-Vargas D, Hernandez W.
    Sensors (Basel); 2024 May 15; 24(10):. PubMed ID: 38793995
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  • 11. A 66-76 GHz Wide Dynamic Range GaAs Transceiver for Channel Emulator Application.
    Zhou P, Wang C, Sun J, Chen Z, Chen J, Hong W.
    Micromachines (Basel); 2022 May 23; 13(5):. PubMed ID: 35630276
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  • 14. An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band.
    Li J, Mao S, Xu Y, Zhao X, Wang W, Guo F, Zhang Q, Wu Y, Zhang B, Chen T, Yan B, Xu R, Li Y.
    Micromachines (Basel); 2018 Aug 10; 9(8):. PubMed ID: 30424329
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  • 17. A wideband cryogenic microwave low-noise amplifier.
    Ivanov BI, Volkhin DI, Novikov IL, Pitsun DK, Moskalev DO, Rodionov IA, Il'ichev E, Vostretsov AG.
    Beilstein J Nanotechnol; 2020 Aug 10; 11():1484-1491. PubMed ID: 33083196
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  • 18. An Efficient 24-30 GHz GaN-on-Si Driver Amplifier Using Synthesized Matching Networks.
    Peng L, Yan J, Zhang Z, Zhang G.
    Micromachines (Basel); 2023 Jan 10; 14(1):. PubMed ID: 36677236
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  • 20. A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth Expansion Techniques.
    Shan B, Fu H, Wang J.
    Micromachines (Basel); 2024 Jan 23; 15(2):. PubMed ID: 38398899
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