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Journal Abstract Search

287 related items for PubMed ID: 28653827

  • 1. Black Phosphorus Field-Effect Transistors with Work Function Tunable Contacts.
    Ma Y, Shen C, Zhang A, Chen L, Liu Y, Chen J, Liu Q, Li Z, Amer MR, Nilges T, Abbas AN, Zhou C.
    ACS Nano; 2017 Jul 25; 11(7):7126-7133. PubMed ID: 28653827
    [Abstract] [Full Text] [Related]

  • 2. Black Phosphorus Transistors with Near Band Edge Contact Schottky Barrier.
    Ling ZP, Sakar S, Mathew S, Zhu JT, Gopinadhan K, Venkatesan T, Ang KW.
    Sci Rep; 2015 Dec 15; 5():18000. PubMed ID: 26667402
    [Abstract] [Full Text] [Related]

  • 3. Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling.
    Du Y, Liu H, Deng Y, Ye PD.
    ACS Nano; 2014 Oct 28; 8(10):10035-42. PubMed ID: 25314022
    [Abstract] [Full Text] [Related]

  • 4. Black Phosphorus Field-Effect Transistors with Improved Contact via Localized Joule Heating.
    Shi F, Gao S, Li Q, Zhang Y, Zhang T, He Z, Wang K, Ye X, Liu J, Jiang S, Chen C.
    Nanomaterials (Basel); 2023 Sep 21; 13(18):. PubMed ID: 37764636
    [Abstract] [Full Text] [Related]

  • 5. Enhancing ambipolar carrier transport of black phosphorus field-effect transistors with Ni-P alloy contacts.
    Park H, Kim J.
    Phys Chem Chem Phys; 2018 Sep 12; 20(35):22439-22444. PubMed ID: 30062335
    [Abstract] [Full Text] [Related]

  • 6. Low Schottky barrier black phosphorus field-effect devices with ferromagnetic tunnel contacts.
    Kamalakar MV, Madhushankar BN, Dankert A, Dash SP.
    Small; 2015 May 13; 11(18):2209-16. PubMed ID: 25586013
    [Abstract] [Full Text] [Related]

  • 7. Black phosphorus transistors with van der Waals-type electrical contacts.
    Quhe R, Wang Y, Ye M, Zhang Q, Yang J, Lu P, Lei M, Lu J.
    Nanoscale; 2017 Sep 28; 9(37):14047-14057. PubMed ID: 28894869
    [Abstract] [Full Text] [Related]

  • 8. How Important Is the Metal-Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus?
    Yang L, Charnas A, Qiu G, Lin YM, Lu CC, Tsai W, Paduano Q, Snure M, Ye PD.
    ACS Omega; 2017 Aug 31; 2(8):4173-4179. PubMed ID: 31457714
    [Abstract] [Full Text] [Related]

  • 9. Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers.
    Ra HS, Lee AY, Kwak DH, Jeong MH, Lee JS.
    ACS Appl Mater Interfaces; 2018 Jan 10; 10(1):925-932. PubMed ID: 29256593
    [Abstract] [Full Text] [Related]

  • 10. Schottky Barriers in Bilayer Phosphorene Transistors.
    Pan Y, Dan Y, Wang Y, Ye M, Zhang H, Quhe R, Zhang X, Li J, Guo W, Yang L, Lu J.
    ACS Appl Mater Interfaces; 2017 Apr 12; 9(14):12694-12705. PubMed ID: 28322554
    [Abstract] [Full Text] [Related]

  • 11. Can a Black Phosphorus Schottky Barrier Transistor Be Good Enough?
    Quhe R, Peng X, Pan Y, Ye M, Wang Y, Zhang H, Feng S, Zhang Q, Shi J, Yang J, Yu D, Lei M, Lu J.
    ACS Appl Mater Interfaces; 2017 Feb 01; 9(4):3959-3966. PubMed ID: 28068757
    [Abstract] [Full Text] [Related]

  • 12. High-Performance Two-Dimensional InSe Field-Effect Transistors with Novel Sandwiched Ohmic Contact for Sub-10 nm Nodes: a Theoretical Study.
    Zhu J, Ning J, Wang D, Zhang J, Guo L, Hao Y.
    Nanoscale Res Lett; 2019 Aug 15; 14(1):277. PubMed ID: 31418092
    [Abstract] [Full Text] [Related]

  • 13. High-Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions.
    Liu B, Ma Y, Zhang A, Chen L, Abbas AN, Liu Y, Shen C, Wan H, Zhou C.
    ACS Nano; 2016 May 24; 10(5):5153-60. PubMed ID: 27159780
    [Abstract] [Full Text] [Related]

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  • 15. Sulfur-Doped Black Phosphorus Field-Effect Transistors with Enhanced Stability.
    Lv W, Yang B, Wang B, Wan W, Ge Y, Yang R, Hao C, Xiang J, Zhang B, Zeng Z, Liu Z.
    ACS Appl Mater Interfaces; 2018 Mar 21; 10(11):9663-9668. PubMed ID: 29481035
    [Abstract] [Full Text] [Related]

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  • 17. Flexible black phosphorus ambipolar transistors, circuits and AM demodulator.
    Zhu W, Yogeesh MN, Yang S, Aldave SH, Kim JS, Sonde S, Tao L, Lu N, Akinwande D.
    Nano Lett; 2015 Mar 11; 15(3):1883-90. PubMed ID: 25715122
    [Abstract] [Full Text] [Related]

  • 18. Black Phosphorus High-Frequency Transistors with Local Contact Bias.
    Li C, Xiong K, Li L, Guo Q, Chen X, Madjar A, Watanabe K, Taniguchi T, Hwang JCM, Xia F.
    ACS Nano; 2020 Feb 25; 14(2):2118-2125. PubMed ID: 31922387
    [Abstract] [Full Text] [Related]

  • 19. Physically Transient Field-Effect Transistors Based on Black Phosphorus.
    Song MK, Namgung SD, Sung T, Cho AJ, Lee J, Ju M, Nam KT, Lee YS, Kwon JY.
    ACS Appl Mater Interfaces; 2018 Dec 12; 10(49):42630-42636. PubMed ID: 30370761
    [Abstract] [Full Text] [Related]

  • 20. Schottky barrier height engineering on MoS2 field-effect transistors using a polymer surface modifier on a contact electrode.
    Choi D, Jeon J, Park TE, Ju BK, Lee KY.
    Discov Nano; 2023 May 31; 18(1):80. PubMed ID: 37382714
    [Abstract] [Full Text] [Related]

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