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Journal Abstract Search

165 related items for PubMed ID: 28758401

  • 21. Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy.
    Dursap T, Vettori M, Botella C, Regreny P, Blanchard N, Gendry M, Chauvin N, Bugnet M, Danescu A, Penuelas J.
    Nanotechnology; 2021 Apr 09; 32(15):155602. PubMed ID: 33429384
    [Abstract] [Full Text] [Related]

  • 22. Highly uniform zinc blende GaAs nanowires on Si(111) using a controlled chemical oxide template.
    Tan SL, Genuist Y, den Hertog MI, Bellet-Amalric E, Mariette H, Pelekanos NT.
    Nanotechnology; 2017 Jun 23; 28(25):255602. PubMed ID: 28475104
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  • 23. In situ mechanical resonance behaviour of pristine and defective zinc blende GaAs nanowires.
    Pickering E, Bo A, Zhan H, Liao X, Tan HH, Gu Y.
    Nanoscale; 2018 Feb 01; 10(5):2588-2595. PubMed ID: 29350729
    [Abstract] [Full Text] [Related]

  • 24. Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy.
    Park KW, Park CY, Ravindran S, Jang JS, Jo YR, Kim BJ, Lee YT.
    Nanoscale Res Lett; 2014 Feb 01; 9(1):626. PubMed ID: 25489280
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  • 25. Growth of InAs/InP core-shell nanowires with various pure crystal structures.
    Gorji Ghalamestani S, Heurlin M, Wernersson LE, Lehmann S, Dick KA.
    Nanotechnology; 2012 Jul 20; 23(28):285601. PubMed ID: 22717421
    [Abstract] [Full Text] [Related]

  • 26. Lithography-free oxide patterns as templates for self-catalyzed growth of highly uniform GaAs nanowires on Si(111).
    Hakkarainen TV, Schramm A, Mäkelä J, Laukkanen P, Guina M.
    Nanotechnology; 2015 Jul 10; 26(27):275301. PubMed ID: 26087248
    [Abstract] [Full Text] [Related]

  • 27. GaAs nanowires with oxidation-proof arsenic capping for the growth of an epitaxial shell.
    Guan X, Becdelievre J, Benali A, Botella C, Grenet G, Regreny P, Chauvin N, Blanchard NP, Jaurand X, Saint-Girons G, Bachelet R, Gendry M, Penuelas J.
    Nanoscale; 2016 Aug 25; 8(34):15637-44. PubMed ID: 27513669
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  • 28. Lithography-free shell-substrate isolation for core-shell GaAs nanowires.
    Haggren T, Perros AP, Jiang H, Huhtio T, Kakko JP, Dhaka V, Kauppinen E, Lipsanen H.
    Nanotechnology; 2016 Jul 08; 27(27):275603. PubMed ID: 27242347
    [Abstract] [Full Text] [Related]

  • 29. Position-controlled uniform GaAs nanowires on silicon using nanoimprint lithography.
    Munshi AM, Dheeraj DL, Fauske VT, Kim DC, Huh J, Reinertsen JF, Ahtapodov L, Lee KD, Heidari B, van Helvoort AT, Fimland BO, Weman H.
    Nano Lett; 2014 Feb 12; 14(2):960-6. PubMed ID: 24467394
    [Abstract] [Full Text] [Related]

  • 30. Microstructural evolution in self-catalyzed GaAs nanowires during in-situ TEM study.
    Gang GW, Lee JH, Kim SY, Jeong T, Bin Kim K, Thi Hong Men N, Kim YR, Ahn SJ, Kim CS, Kim YH.
    Nanotechnology; 2021 Apr 02; 32(14):145709. PubMed ID: 33326944
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  • 31. Surface effects on the atomic and electronic structure of unpassivated GaAs nanowires.
    Rosini M, Magri R.
    ACS Nano; 2010 Oct 26; 4(10):6021-31. PubMed ID: 20853868
    [Abstract] [Full Text] [Related]

  • 32. Controlling Bi-Provoked Nanostructure Formation in GaAs/GaAsBi Core-Shell Nanowires.
    Matsuda T, Takada K, Yano K, Tsutsumi R, Yoshikawa K, Shimomura S, Shimizu Y, Nagashima K, Yanagida T, Ishikawa F.
    Nano Lett; 2019 Dec 11; 19(12):8510-8518. PubMed ID: 31525986
    [Abstract] [Full Text] [Related]

  • 33. Room-Temperature Near-Infrared Lasing from GaAs/AlGaAs Core-Shell Nanowires Based on Random Cavity.
    Meng B, Kang Y, Zhang X, Yu X, Wang S, Wang P, Tang J, Hao Q, Wei Z, Chen R.
    ACS Appl Mater Interfaces; 2024 Aug 07; 16(31):41677-41683. PubMed ID: 39069675
    [Abstract] [Full Text] [Related]

  • 34. Atomistic Interface Dynamics in Sn-Catalyzed Growth of Wurtzite and Zinc-Blende ZnO Nanowires.
    Jia S, Hu S, Zheng H, Wei Y, Meng S, Sheng H, Liu H, Zhou S, Zhao D, Wang J.
    Nano Lett; 2018 Jul 11; 18(7):4095-4099. PubMed ID: 29879357
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  • 35. A Novel Growth Method To Improve the Quality of GaAs Nanowires Grown by Ga-Assisted Chemical Beam Epitaxy.
    García Núñez C, Braña AF, López N, García BJ.
    Nano Lett; 2018 Jun 13; 18(6):3608-3615. PubMed ID: 29739187
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  • 36. MOCVD Growth of High-Quality and Density-Tunable GaAs Nanowires on ITO Catalyzed by Au Nanoparticles Deposited by Centrifugation.
    Wu D, Tang X, Yoon HS, Wang K, Olivier A, Li X.
    Nanoscale Res Lett; 2015 Dec 13; 10(1):410. PubMed ID: 26487507
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  • 37. Strain relaxation and ambipolar electrical transport in GaAs/InSb core-shell nanowires.
    Rieger T, Zellekens P, Demarina N, Hassan AA, Hackemüller FJ, Lüth H, Pietsch U, Schäpers T, Grützmacher D, Lepsa MI.
    Nanoscale; 2017 Nov 30; 9(46):18392-18401. PubMed ID: 29147699
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  • 38. Molecular beam epitaxy growth of GaAs/InAs core-shell nanowires and fabrication of InAs nanotubes.
    Rieger T, Luysberg M, Schäpers T, Grützmacher D, Lepsa MI.
    Nano Lett; 2012 Nov 14; 12(11):5559-64. PubMed ID: 23030380
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  • 39. Kinetic Engineering of Wurtzite and Zinc-Blende AlSb Shells on InAs Nanowires.
    Kindlund H, Zamani RR, Persson AR, Lehmann S, Wallenberg LR, Dick KA.
    Nano Lett; 2018 Sep 12; 18(9):5775-5781. PubMed ID: 30133288
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  • 40. Growth of stacking-faults-free zinc blende GaAs nanowires on Si substrate by using AlGaAs/GaAs buffer layers.
    Huang H, Ren X, Ye X, Guo J, Wang Q, Yang Y, Cai S, Huang Y.
    Nano Lett; 2010 Jan 12; 10(1):64-8. PubMed ID: 20000817
    [Abstract] [Full Text] [Related]

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