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Journal Abstract Search

165 related items for PubMed ID: 28758401

  • 41. Growth selectivity control of InAs shells on crystal phase engineered GaAs nanowires.
    Gómez VJ, Marnauza M, Dick KA, Lehmann S.
    Nanoscale Adv; 2022 Aug 11; 4(16):3330-3341. PubMed ID: 36131713
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  • 42. Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates.
    Boras G, Yu X, Fonseka HA, Davis G, Velichko AV, Gott JA, Zeng H, Wu S, Parkinson P, Xu X, Mowbray D, Sanchez AM, Liu H.
    J Phys Chem C Nanomater Interfaces; 2021 Jul 08; 125(26):14338-14347. PubMed ID: 34276869
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  • 44. Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: ab initio simulations supporting center nucleation.
    André Y, Lekhal K, Hoggan P, Avit G, Cadiz F, Rowe A, Paget D, Petit E, Leroux C, Trassoudaine A, Ramdani MR, Monier G, Colas D, Ajib R, Castelluci D, Gil E.
    J Chem Phys; 2014 May 21; 140(19):194706. PubMed ID: 24852556
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  • 45. Crystal Phase Quantum Dots in the Ultrathin Core of GaAs-AlGaAs Core-Shell Nanowires.
    Loitsch B, Winnerl J, Grimaldi G, Wierzbowski J, Rudolph D, Morkötter S, Döblinger M, Abstreiter G, Koblmüller G, Finley JJ.
    Nano Lett; 2015 Nov 11; 15(11):7544-51. PubMed ID: 26455732
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  • 46. Growth and characterization of wurtzite GaAs nanowires with defect-free zinc blende GaAsSb inserts.
    Dheeraj DL, Patriarche G, Zhou H, Hoang TB, Moses AF, Grønsberg S, van Helvoort AT, Fimland BO, Weman H.
    Nano Lett; 2008 Dec 11; 8(12):4459-63. PubMed ID: 19367852
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  • 47. Understanding the role of facets and twin defects in the optical performance of GaAs nanowires for laser applications.
    Azimi Z, Gagrani N, Qu J, Lem OLC, Mokkapati S, Cairney JM, Zheng R, Tan HH, Jagadish C, Wong-Leung J.
    Nanoscale Horiz; 2021 Jun 28; 6(7):559-567. PubMed ID: 33999985
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  • 48. Zinc blende GaAsSb nanowires grown by molecular beam epitaxy.
    Dheeraj DL, Patriarche G, Largeau L, Zhou HL, van Helvoort AT, Glas F, Harmand JC, Fimland BO, Weman H.
    Nanotechnology; 2008 Jul 09; 19(27):275605. PubMed ID: 21828712
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  • 49. Effects of Polytypism on Optical Properties and Band Structure of Individual Ga(N)P Nanowires from Correlative Spatially Resolved Structural and Optical Studies.
    Dobrovolsky A, Persson PO, Sukrittanon S, Kuang Y, Tu CW, Chen WM, Buyanova IA.
    Nano Lett; 2015 Jun 10; 15(6):4052-8. PubMed ID: 25988267
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  • 51. Formation Mechanism of Twinning Superlattices in Doped GaAs Nanowires.
    Isik Goktas N, Sokolovskii A, Dubrovskii VG, LaPierre RR.
    Nano Lett; 2020 May 13; 20(5):3344-3351. PubMed ID: 32239956
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  • 55. New mode of vapor-liquid-solid nanowire growth.
    Dubrovskii VG, Cirlin GE, Sibirev NV, Jabeen F, Harmand JC, Werner P.
    Nano Lett; 2011 Mar 09; 11(3):1247-53. PubMed ID: 21344916
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  • 56. Enhanced thermoelectric figure of merit in thin GaAs nanowires.
    Zou X, Chen X, Huang H, Xu Y, Duan W.
    Nanoscale; 2015 May 21; 7(19):8776-81. PubMed ID: 25905892
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  • 57. Selective-Area MOCVD Growth and Carrier-Transport-Type Control of InAs(Sb)/GaSb Core-Shell Nanowires.
    Ji X, Yang X, Du W, Pan H, Yang T.
    Nano Lett; 2016 Dec 14; 16(12):7580-7587. PubMed ID: 27960521
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  • 58. Radiation effects on GaAs/AlGaAs core/shell ensemble nanowires and nanowire infrared photodetectors.
    Li F, Li Z, Tan L, Zhou Y, Ma J, Lysevych M, Fu L, Tan HH, Jagadish C.
    Nanotechnology; 2017 Mar 24; 28(12):125702. PubMed ID: 28140378
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  • 59. Effect of V/III ratio on the structural and optical properties of self-catalysed GaAs nanowires.
    Ahtapodov L, Munshi AM, Nilsen JS, Reinertsen JF, Dheeraj DL, Fimland BO, van Helvoort AT, Weman H.
    Nanotechnology; 2016 Nov 04; 27(44):445711. PubMed ID: 27688265
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  • 60. Precise characterization of self-catalyzed III-V nanowire heterostructures via optical second harmonic generation.
    Yu Y, Wang J, Wei YM, Zhou ZK, Ni HQ, Niu ZC, Wang XH, Yu SY.
    Nanotechnology; 2017 Sep 27; 28(39):395701. PubMed ID: 28682302
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