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Journal Abstract Search

398 related items for PubMed ID: 28772972

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  • 2. Enhanced Interfacial Integrity of Amorphous Oxide Thin-Film Transistors by Elemental Diffusion of Ternary Oxide Semiconductors.
    Jeon SP, Heo JS, Kim I, Kim YH, Park SK.
    ACS Appl Mater Interfaces; 2020 Dec 30; 12(52):57996-58004. PubMed ID: 33332113
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  • 4. Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric.
    Choi S, Song S, Kim T, Shin JC, Jo JW, Park SK, Kim YH.
    Micromachines (Basel); 2020 Nov 25; 11(12):. PubMed ID: 33255690
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  • 6. High-Mobility and Hysteresis-Free Flexible Oxide Thin-Film Transistors and Circuits by Using Bilayer Sol-Gel Gate Dielectrics.
    Jo JW, Kim KH, Kim J, Ban SG, Kim YH, Park SK.
    ACS Appl Mater Interfaces; 2018 Jan 24; 10(3):2679-2687. PubMed ID: 29280381
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  • 7. Proton Conducting Perhydropolysilazane-Derived Gate Dielectric for Solution-Processed Metal Oxide-Based Thin-Film Transistors.
    Kang YH, Min BK, Kim SK, Bae G, Song W, Lee C, Cho SY, An KS.
    ACS Appl Mater Interfaces; 2020 Apr 01; 12(13):15396-15405. PubMed ID: 32148019
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  • 10. High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al₂O₃ Gate Dielectric.
    Choi S, Kim KT, Park SK, Kim YH.
    Materials (Basel); 2019 Mar 13; 12(6):. PubMed ID: 30871272
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  • 13. Atmospheric-pressure plasma treatment toward high-quality solution-processed aluminum oxide gate dielectric films in thin-film transistors.
    Park J, Cho NK, Lee SE, Lee EG, Lee J, Im C, Na HJ, Kim YS.
    Nanotechnology; 2019 Dec 06; 30(49):495702. PubMed ID: 31476746
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  • 16. Low-voltage-driven pentacene thin-film transistors with cross-linked poly(4-vinylphenol)/high-k Bi55b3O15 hybrid dielectric for phototransistor.
    Chang S, Chung MH, Kwon JH, Shin SI, Oh TY, Dong KY, Lee SJ, Cho KH, Nahm S, Ju BK.
    J Nanosci Nanotechnol; 2012 Apr 06; 12(4):3355-9. PubMed ID: 22849123
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  • 17. Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature.
    Yu BS, Jeon JY, Kang BC, Lee W, Kim YH, Ha TJ.
    Sci Rep; 2019 Jun 10; 9(1):8416. PubMed ID: 31182751
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  • 19. Designing hybrid gate dielectric for fully printing high-performance carbon nanotube thin film transistors.
    Li Q, Li S, Yang D, Su W, Wang Y, Zhou W, Liu H, Xie S.
    Nanotechnology; 2017 Oct 27; 28(43):435203. PubMed ID: 28832342
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  • 20. Homojunction solution-processed metal oxide thin-film transistors using passivation-induced channel definition.
    Kim JH, Rim YS, Kim HJ.
    ACS Appl Mater Interfaces; 2014 Apr 09; 6(7):4819-22. PubMed ID: 24611468
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