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Pubmed for Handhelds

PUBMED FOR HANDHELDS

Journal Abstract Search

139 related items for PubMed ID: 28795821

  • 41.
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  • 42. Electron-Hole Crossover in Gate-Controlled Bilayer Graphene Quantum Dots.
    Banszerus L, Rothstein A, Fabian T, Möller S, Icking E, Trellenkamp S, Lentz F, Neumaier D, Watanabe K, Taniguchi T, Libisch F, Volk C, Stampfer C.
    Nano Lett; 2020 Oct 14; 20(10):7709-7715. PubMed ID: 32986437
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  • 46. Approaching Ideal Visibility in Singlet-Triplet Qubit Operations Using Energy-Selective Tunneling-Based Hamiltonian Estimation.
    Kim J, Yun J, Jang W, Jang H, Park J, Song Y, Cho MK, Sim S, Sohn H, Jung H, Umansky V, Kim D.
    Phys Rev Lett; 2022 Jul 22; 129(4):040501. PubMed ID: 35939035
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  • 53. Gate-based high fidelity spin readout in a CMOS device.
    Urdampilleta M, Niegemann DJ, Chanrion E, Jadot B, Spence C, Mortemousque PA, Bäuerle C, Hutin L, Bertrand B, Barraud S, Maurand R, Sanquer M, Jehl X, De Franceschi S, Vinet M, Meunier T.
    Nat Nanotechnol; 2019 Aug 22; 14(8):737-741. PubMed ID: 31086305
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  • 56. Integrated silicon qubit platform with single-spin addressability, exchange control and single-shot singlet-triplet readout.
    Fogarty MA, Chan KW, Hensen B, Huang W, Tanttu T, Yang CH, Laucht A, Veldhorst M, Hudson FE, Itoh KM, Culcer D, Ladd TD, Morello A, Dzurak AS.
    Nat Commun; 2018 Oct 30; 9(1):4370. PubMed ID: 30375392
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  • 58. Strain-induced ordered Ge(Si) hut wires on patterned Si (001) substrates.
    Ming M, Gao F, Wang JH, Zhang JY, Wang T, Yao Y, Hu H, Zhang JJ.
    Nanoscale; 2023 Apr 27; 15(16):7311-7317. PubMed ID: 37013680
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